• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.90-96
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• 2006

A novel ${\Sigma}{\Delta}$ fractional-N PLL architecture for fast locking and fractional spur suppressing is proposed based on the capacitance scaling scheme. It changes the effective capacitance of loop filter (LF) by increasing and decreasing current to the capacitor via different paths with multiple charge pumps. The effective capacitance of loop filter (LF) can be scaled up/down depending on operating status while keeping LF capacitors small enough to be integrated into a single PLL chip. Fractional spurs suppressing have been achieved by reducing the magnitude of charge pump current when the PLL is in-lock without degrading fast locking characteristic. It has been simulated by HSPICE in a CMOS $0.35{\mu}m$ process, and shows flat locking time is less than $8{\mu}s$ with the small size of LF capacitors, 200pF and 17pF, and $2.8k{\Omega}$ resistor.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.476-482
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• 1996

The multi-dielectric layer SiO$_{2}$/Si$_{3}$N$_{4}$/SiO$_{2}$(ONO) is used to improve electrical capacitance and to scale down the memory device. In this paper, improvement of the capacitance by reducing the bottom oxide thickness in the nitride deposition with load lock(L/L) vacuum system is studied. Bottom oxide thickness under the nitride layer is measured by ellipsometer both in L/L and non-L/L systems. Both results are in the range of 3-10.angs. and 10-15.angs., respectively, independent of the nitride and top oxide thickness. Effective thickness and cell capacitance for SONOS capacitor are in the range of 50-52.angs. and 35-37fF respectively in the case of nitride 70.angs. in L/L vacuum system. Compared with non-L/L system, the bottom oxide thickness in the case of L/L system decreases while cell capacitance increases about 4 fF. The results obtained in this study are also applicable to ONO scaling in the thin bottom oxide region of memory stacked capacitor.

• Progress in Medical Physics
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• v.3 no.2
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• pp.43-57
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• 1992

Phase detector techique provides a unique probe to membrane recycling phenomenon by enabling dynamic monitoring of cell membrane capacitance. However, it has inherent errors due to constant changes in measurement environments. The present study analyzed several error sources to develope application criteria of this technique. and the following was found based on a theoretical analysis. The initial phase angle has to be appropriately selected to minimize the error due to perturbation of access and membrane conductances. Excitation frequency is also important to determine the initial phase angle. However. deviation of the phase angle from a predetermined initial value during the measurement period does not affect capacitance estimation to a significant degree. Despite an appropriate initial phase selection an error in scaling factor is expected for a large increase in capacitance during exocytosis. which may be overcome by iteratively correcting the scaling factor over the measurement period. These results will provide a useful guideline in practical application of this technique.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.525-536
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• 2014

Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

• Journal of Information Display
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• v.7 no.3
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• pp.9-12
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• 2006

A new voltage-scaled compensation pixel which employs 3 p-type poly-Si TFTs and 2 capacitors without additional control line has been proposed and verified. The proposed pixel does not employ the $V_{TH}$ memorizing and cancellation, but scales down the inevitable $V_{TH}$ variation of poly-Si TFT. Also the troublesome narrow input range of $V_{DATA}$ is increased and the $V_{DD}$ supply voltage drop is suppressed. In our experimental results, the OLED current error is successfully compensated by easily controlling the proposed voltage scaling effects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.37-44
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• 2009

A novel phase-locked loop(PLL) architecture with resistance and capacitance scaling scheme has been proposed. The proposed PLL has three charge pumps. The effective capacitance and resistance of the loop filter can be scaled up/down according to the locking status by controlling the direction and magnitude of each charge pump current. This architecture makes it possible to have a narrow bandwidth and low resistance in the loop filter, which improves phase noise and reference spur characteristics. It has been fabricated with a 3.3V $0.35{\mu}m$ CMOS process. The measured locking time is $25{\mu}s$ with the measured phase noise of -105.37 dBc/Hz @1MHz and the reference spur of -50dBc at 851.2MHz output frequency

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.134-142
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• 2010

A comparative study on the trade-off between the drive current and the total gate capacitance in double-gate (DG) and triple-gate (TG) FinFETs is performed by using 3-D device simulation. As the first result, we found that the optimum ratio of the hardmask oxide thickness ($T_{mask}$) to the sidewall oxide thickness ($T_{ox}$) is $T_{mask}/T_{ox}$=10/2 nm for the minimum logic delay ($\tau$) while $T_{mask}/T_{ox}$=5/1~2 nm for the maximum intrinsic gate capacitance coupling ratio (ICR) with the fixed channel length ($L_G$) and the fin width ($W_{fin}$) under the short channel effect criterion. It means that the TG FinFET is not under the optimal condition in terms of the circuit performance. Second, under optimized $T_{mask}/T_{ox}$, the propagation delay ($\tau$) decreases with the increasing fin height $H_{fin}$. It means that the FinFET-based logic circuit operation goes into the drive current-dominant regime rather than the input gate load capacitance-dominant regime as $H_{fin}$ increases. In the end, the sensitivity of $\Delta\tau/{\Delta}H_{fin}$ or ${{\Delta}I_{ON}}'/{\Delta}H_{fin}$ decreases as $L_G/W_{fin}$ is scaled-down. However, $W_{fin}$ should be carefully designed especially in circuits that are strongly influenced by the self-capacitance or a physical layout because the scaling of $W_{fin}$ is followed by the increase of the self-capacitance portion in the total load capacitance.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.252-254
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• 2002

Metal oxides with high dielectric constants have the potential to expend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx is formed and limits the specific capacitance of the gate structure. We deposisted aluminum oxide and examined the composition of the interfacial layer by employing high-resolution X-ray photoelectron spectroscopy and X-ray reflectivity. We find that the interfacial region is not pure SiO$_2$, but is composed of a complex depth-dependent ternary oxide of $AlSi_xO_y$ and the pure SiO$_2$.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.173-178
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• 2012

Using accurate MOSFET substrate parameters obtained by a RF direct extraction method, it is demonstrated that a BSIM4 model with only substrate resistances is not physically valid to apply in the wide range of gate length because of scaling inaccuracy. In order to remove the unphysical problem of the BSIM4, a modified BSIM4 model with additional dielectric substrate capacitance is used and its physical validity is verified by observing excellent gate length scalability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.