• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.296-296
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• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.295-295
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• 2013

Supercapacitors with higher energy and power density are attracting growing attention for their wide range of potential applications such as portable electronic equipments, hybrid vehicle and cellular devices. In various classes of materials for supercapacitors, the redox pseudocapacitive materials such as conducting polymers and metal oxides have been most widely studied recently. The nanostructuring of the electrode surface has also been focused on since it can provide large surface area and consequently easy diffusion of ions in the capacitors. Among the active materials, in this work, we have used polyaniline (PANi) and manganese oxide ($MnO_2$). PANi is one of the promising electrode and active materials due to its desirable properties such as high electrochemical activity, high doping level and stability. $MnO_2$ is also widely studied material for supercapacitors since it is relatively cheap and environmentally friendly. In this work, we fabricated PANi hollow nanospheres by polymerizing aniline monomers on the polystyrene (PS) nanospheres and then dissolving the inner PS spheres. This nanostructuring of the PANi surface can provide large surface area and hence easy diffusion of electrolyte ions. We also incorporated $MnO_2$ nanoparticles into the PANi hollow nanospheres and investigated its electrochemical properties. It is expected that the combination of these two active materials with slightly different working potential windows show synergetic effects such as broader working potential range and enhanced specific capacitance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.3
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• pp.188-196
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• 2009

Due to its high power density, long cycle life and clean nature supercapacitors are widely used for improving the dynamic characteristics of the new and renewable energy sources and extending the battery run-time and life. In this paper improved dynamic model of the supercapacitor is developed by the electrochemical impedance spectroscopy technique. The developed model can be used to accurately estimate the dynamic behaviour of the supercapacitor and calculate the exact capacitance value at a certain state of charges. The model of the supercapacitor in the frequency domain is equivalently transformed into that in the time domain for Matlab/Simulink simulaton. The simulation data shows fine agreements with experimental results, thereby proving the validity and the accuracy of the developed model.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3697-3702
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• 2010

We demonstrate that vertically aligned carbon nanotubes can be synthesized directly on tantalum substrate via water-assisted chemical vapor deposition and evaluate their properties as electrochemical capacitors. The mean diameter of the carbon nanotubes was $7.1{\pm}1.5\;nm$, and 70% of them had double walls. The intensity ratio of G-band to D-band in Raman spectra was as high as 5, indicating good quality of the carbon nanotubes. Owing to the alignment and low equivalent series resistance, the carbon nanotube based supercapacitors showed good rate performance. Rectangular shape of cyclic voltammogram was maintained even at the scan rate of > 1 V/s in 1 M sulfuric acid aqueous solution. Specific capacitance was well-retained (~94%) even when the discharging current density dramatically increased up to 145 A/g. Consequently, specific power as high as 60 kW/kg was obtained from as-grown carbon nanotubes in aqueous solution. Maximum specific energy of ~20 Wh/kg was obtained when carbon nanotubes were electrochemically oxidized and operated in organic solution. Demonstration of direct synthesis of carbon nanotubes on tantalum current collectors and their applications as supercapacitors could be an invaluable basis for fabrication of high performance carbon nanotube supercapacitors.