• 한국산학기술학회논문지
• /
• 제9권4호
• /
• pp.918-923
• /
• 2008

본 논문에서는 전극들이 동일한 평면상에 놓이고, Gap에 의하여 유전간격을 형성한 새로운 구조의 임베디드 캐패시터(EC)를 제안하였다. 제안된 EC의 이름을 Gap type EC라고 하고, 유한요소법으로 그 특성을 평가하였다. Cap type EC의 공진주파수는 기존의 EC에 비하여 고주파 대역으로 이동되었다. 또한 공진주파수는 전극의 크기와 두께에 따라 변화되었다. Gap type EC는 Gap size가 $50{\mu}m$일 때 $55pF/cm^2$의 정전용량을 나타내었다. 이 값은 기존의 EC가 나타내는 $25pF/cm^2$에 비하여 높은 값이다. 따라서 본 논문에서 제안한 Gap type EC는 고주파 디커플링 용도로 충분히 사용될 수 있을 것이다.

• 한국전기전자재료학회논문지
• /
• 제18권9호
• /
• pp.833-839
• /
• 2005

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black : $PTFE\;=\;95-X\;:\;X\;:\;5wt.\%$. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 : carton black $PTFE\;=\;80\;:\;15\;:\;5wt.\%$. These behaviors could be explained by the network structure of PTFE fibrils and conducting Paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with $15wt.\%$ of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black $CMC\;=\;70\;:\;30wt.\%$, has exhibited the best rate capability between $0.5\;mA/cm^2\~100\;mA/cm^2$ current density and the lowest ESR.

• 한국전기전자재료학회논문지
• /
• 제17권1호
• /
• pp.39-45
• /
• 2004

Fine LaAlO$_3$ powders wore successfully synthesized from La$_2$O$_3$ and ${\gamma}$ $Al_2$O$_3$ powders milling for 10∼50 hours via the high energy milling technique (mechanochemical method) in room temperature and air. The particle size of LaAlO$_3$ powder were estimated from XRD patterns and SEM images to be 160∼180 nm. The LaAlO$_3$ ceramics arc derived for the synthesized powders (milling for 10, 30 and 50 hours) by sintering at 140$0^{\circ}C$ and 150$0^{\circ}C$. The micrographs of grains showed an agglomeration and the degree of agglomeration increased with the milling time. The LaAlO$_3$ made from synthesized powders milling for 50 hours can be sintered to 99.5％ of theoretical density at 150$0^{\circ}C$ for 1 hour. These ceramics exhibits a dielectric constant of 20, a dielectric loss of 0.0003 and a temperature coefficient of capacitance of 15 ppm/$^{\circ}C$ at 1 MHz.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.355-356
• /
• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black: PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 carbon black : PTFE = 80 : 15 : 5 wt%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between 0.5 $mA/cm^2$ ~ 100 $mA/cm^2$ current density and the lowest ESR.

• Transactions on Electrical and Electronic Materials
• /
• 제10권5호
• /
• pp.147-151
• /
• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• Journal of information and communication convergence engineering
• /
• 제13권3호
• /
• pp.172-179
• /
• 2015

Face-to-face (F2F) bonding in three-dimensional integrated circuits (3D ICs), compared with other bonding styles, is closer to commercialization because of its benefits in terms of density, yield, and cost. However, despite the benefits that F2F bonding expect to provide, it's physical nature has not been studied thoroughly. In this study, we, for the first time, extract cross-die (inter-die) parasitic elements from F2F bonds on the full-chip scale and compare them with the intra-die elements. This allows us to demonstrate the significant impact of field sharing across dies in F2F bonding on full-chip noise and critical path delay values. The baseline method used is the die-by-die method, where the parasitic elements of individual dies are extracted separately and the cross-die parasitic elements are ignored. Compared with this inaccurate method, which was the only method available until now, our first-of-its-kind holistic method corrects the delay error by 25.48% and the noise error by 175%.

• 한국전기전자재료학회논문지
• /
• 제18권12호
• /
• pp.1069-1074
• /
• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1248-1253
• /
• 2004

This work describes the effect of electrode binder on the characteristics of electric double layer capacitor Among carboxymethylcellulose (CMC), Polyvinylpyrrolidone (PVP), Polyvinyl Alcohol (PVA), and Polyvinylidene Fluoride (PVDF), the unit cell using CMC showed good rate capability between $2.5mA/cm^2{\sim}100mA/cm^2$ current density. However, CMC as a binder is incongruent, because the electrode bound with CMC is rigid and easy to crack during a press and winding process for fabrication of capacitor. The unit cell capacitor using the electrode bound with binary binder composed of CMC and Polytetrafluoroethylene (PTFE), especially in composition CMC : PTFE : 60 : 40 wt.%, has exhibited the better mechanical properties than those of the unit cell with CMC. On the other hand, it was also noted that the mechanical properties of CMC+PTFE electrode, coated on underlayer composed of CMC and carbon black, were much improved the binding force.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.39-41
• /
• 2000

Carbon is an attractive candidate for use in eletrochemical supercapacitors that depend on charge storage in the electrode/eletorlyte international double layer. Property of an electrical double layer capacitor depend both on the technique used to prepare the electrode and on the current collector structure. The study is to research that $V_2O_5$-carbon (SP270) composite electrode for supercapacitor. The discharge capacitance of $V_2O_5$-SP270 (20wt%) in 1st and 35cyc1e was 14F/g and 8.5F/g at current density of $0.1mA/cm^2$. The discharge process of $V_2O_5$-SP270 (20wt%) composite electrode is larger than that others.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.242-242
• /
• 2010

산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.