• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.252.1-252.1
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• 2015

최근 화석연료 고갈 문제를 해결하기 위해 대체에너지 개발과 다양한 형태의 에너지 개발에 관한 연구가 활발히 이루어지고 있다. 특히, supercapacitor는 high energy density, high power density, longer life-time과 같은 특성으로 인해 에너지 저장 소자로 각광 받고 있다. Supercapacitor는 석유를 대체할 수 있으며 이산화탄소 배출이 없는 친환경 에너지인 태양광, 풍력, 수소연료전지 등의 신재생에너지 저장장치로써 큰 비중을 차지한다. Supercapacitor의 종류인 electrical double layer capacitors (EDLCs) 는 전극과 전해질 사이에 발생하는 전기 이중층에 축적되는 전하를 이용하여 에너지를 저장하는 반응 메커니즘을 가지며 전극 재료로는 탄소 소재를 사용한다. 탄소 소재는 환경 오염이 적고 가격이 저렴하며 넓은 표면적이라는 장점이 있다. 하지만 기존 탄소 소재는 이러한 장점을 가지지만 supercapacitor로써의 효율이 좋지 않게 나온다. 이런 문제를 개선하기 위하여 그래핀 나노플레이트(Graphene nanoplate, GNP) 위에 직접 탄소나노튜브(Carbon nanotube, CNT)를 성장 시킴으로써 GNP-CNT 하이브리드 탄소 소재를 제조하여 전극으로 사용하였다. 이 GNP-CNT 하이브리드 탄소 소재는 다차원 구조를 가짐으로써 기존 탄소 소재들보다 분산이 잘되고 전해질과의 작용하는 비표면적이 넓다. 전극을 제작하여 Cyclic voltammetry(CV)와 galvano를 측정한 결과는 기존 탄소나노튜브보다 5배 정도의 정전용량(Capacitance)를 가졌다. 이 전극의 구조적 특성을 관찰하기 위해 SEM, TEM 등을 측정하였다.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.238-243
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• 2002

The dielectric properties and synthesis of $LaAIO_3$ ceramics from mixtures of $La_2O_3$ and $AI(OH)_3$ via ground(planetary ball mill) and unground(wet ball mill) were investigated. The single phase $LaAIO_3$ of ground powder was formed at $1000^{\circ}C$, while that of unground powder was formed at $1300^{\circ}C$. Density and grains of ground sample showed 98% of theory density and a uniform size of 0.75\mu\textrm{m}$, respectively, However those of unground sample showed 93% and non-uniform sizes of 4-5 $\mu\textrm{m}$. Dielectric constant and temperature coefficient of capacitance ($\tau$c) of both ground and unground samples were 21~22 and +70~74 ppm$/^{\circ}C$, respectively. Dielectric loss of ground sample(0.0004) was 10 times as low as that of unground sample(0.003) due to a uniform and small gram size.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.460-467
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• 2016

Activated carbons (ACs) have been used as EDLC (electric double-layer capacitor) electrode materials due to their high specific area, stability, and ecological advantages. In order to prepare ACs with high density and crystallinity, coal tar pitch (CTP) was activated by $K_2CO_3$ and the textural and electrochemical properties of the obtained ACs were investigated. Although the CTP ACs formed by $K_2CO_3$ activation had much smaller specific surface area and pore volume than did the CTP ACs formed by KOH activation, their volumetric specific capacitance (F/cc) levels as electrode materials for EDLC were comparable due to their higher density and micro-crystallinity. Structural characterization and EDLC-electrode performance were studied with different activation conditions of $CTP/K_2CO_3$ ratio, activation temperature, and activation period.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.617-623
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• 2017

Mesoporous carbon nanofibers as electrode material for electrical double-layer capacitors(EDLCs) are fabricated using the electrospinning method and carbonization. Their morphologies, structures, chemical bonding states, porous structure, and electrochemical performance are investigated. The optimized mesoporous carbon nanofiber has a high sepecific surface area of $667m^2\;g^{-1}$, high average pore size of 6.3 nm, and high mesopore volume fraction of 80 %, as well as a unifom network structure consiting of a 1-D nanofiber stucture. The optimized mesoporous carbon nanofiber shows outstanding electrochemical performance with high specific capacitance of $87F\;g^{-1}$ at a current density of $0.1A\;g^{-1}$, high-rate performance ($72F\;g^{-1}$ at a current density of $20.0A\;g^{-1}$), and good cycling stability ($92F\;g^{-1}$ after 100 cycles). The improvement of the electrochemical performance via the combined effects of high specific surface area are due to the high mesopore volume fraction of the carbon nanofibers.

• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.440-443
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• 2010

A hybrid supercapacitor consisting of Co-Mn oxide as a cathode, activated carbon as an anode, and 6 M KOH as a electrolyte was fabricated and its supercapacitor performance was investigated by means of cyclic voltammetry. The prepared supercapacitor showed the specific capacitance of 67.3 F/g, energy density of 18.3 Wh/kg, and power density of 237.7 kW/kg, respectively. It means that the supercapacitor can be used for the practical applications.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.69-77
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• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.74-84
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• 2003

Conventional test algorithms do not effectively detect faults by word-line and bit-line coupling noise resulting from the increase of the density of memories. In this paper, the possibility of faults caused by word-line coupling noise is shown, and new fault model, WLSFs(Word-Line Sensitive Fault) is proposed. We also introduce the algorithm considering both word-line and bit-line coupling noise simultaneously. The algorithm increases probability of faults which means improved fault coverage and more effective test algorithm, compared to conventional ones. The proposed algorithm can also cover conventional basic faults which are stuck-at faults, transition faults and coupling faults within a five-cell physical neighborhood.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.