• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.107-113
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• 2022

Fibrous supercapacitors (FSs), owing to their high power density, good safety characteristic, and high flexibility, have recently been in the spotlight as energy storage devices for wearable electronics. However, despite these advantages, FCs face many challenges related to their active material of carbon fiber (CF). CF has low surface area and poor wettability between electrode and electrolyte, which result in low capacitance and poor long-term stability at high current densities. To overcome these limits, fibrous supercapacitors made using surface-activated CF (FS-SACF) are here suggested; these materials have improved specific surface area and better wettability, obtained by introducing porous structure and oxygen-containing functional groups on the CF surface, respectively, through surface engineering. The FS-SACF shows an improved ion diffusion coefficient and better electrochemical performance, including high specific capacity of 223.6 mF cm^-2 at current density of 10 ㎂ cm^-2, high-rate performance of 171.2 mF cm^-2 at current density of 50.0 ㎂ cm^-2, and remarkable, ultrafast cycling stability (96.2 % after 1,000 cycles at current density of 250.0 ㎂ cm^-2). The excellent electrochemical performance is definitely due to the effects of surface functionalization on CF, leading to improved specific surface area and superior ion diffusion capability.

• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.223-228
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• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.705-708
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• 2001

The effect of grinding on the synthesis of LaAO$_3$ceramics was investigated. The mixture ground by plantary ball mill showed 70nm particle size (wet ball mill or unground=0.5 $\mu$m). Monophase LaAlO$_3$powders were formed when ground samples were heated at 100$0^{\circ}C$, however unground samples required temperatures above 130$0^{\circ}C$. Density of the ground samples sintered at 140$0^{\circ}C$ showed 98.3% of theoretical density (unground=93.5% at 150$0^{\circ}C$). Dielectric constant of the ground samples($\varepsilon$r=22.4) showed higher values than that of the unground samples($\varepsilon$r=20.32). Temperature coefficient of capacitance($\tau$$_{c}$) and dielectric loss (tan$\delta$) of the ground samples were similar to those of unground samples.s.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.926-928
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• 1999

Treeing inhibitors of barbituric acid derivatives effects on the electrical properties of crosslinked low density polyethylene under radiation environments were investigated. The electrical parameters for tree inception voltage, AC breakdown strength, volume resistivity, capacitance and dissipation factor at 1MHz and thermoluminescence, gel content measurements were discussed as a function of irradiated dosages. From the results, barbituric acid among the treeing inhibitors was shown the best treeing and radiation resistance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.455-461
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• 2000

The inhibiting effects of electrical treeing and insulation properties of LDPE contained with treeing inhibitors was studied under radiation environment. Barbituric acid and its derivatives were selected as treeing inhibitors. The inception voltage and growth of tree, AC breakdown strength, volume resistivity, high frequency capacitance, and dissipation factor were observed as a function of dose(up to 1000 kGy). And also, measurements of thermo-luminescence(TL), and gel content were carried out. Crosslinked low density polyethylene(XLPE) contained with treeing inhibitors shows better insulation characteristics such as electrical tree propagation, AC breakdown strength, and volume resistivity than those of pure LDPE. The most effective treeing inhibitor was found on the barbituric acid contained XLPE.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1696-1698
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• 1998

Pulsed Nd:YAG laser using Nd:YAG crystal operates stably in the thermal conductivity, mechanical, optical condition. That is used broadly in material processings because of easy reaction to the materials, and the maintenance is very easy because of lamp excitation. In these material processings, power dinsity control is very important to improve processing technology. Power density is controled by inductance and capacitance or repetition rate. Therefore we are going to control laser power density as One-Chip Microprocessor(PIC16C55) and 8051. We have been experimented at the pulse repetition rate range of 10pps to 60pps(pulse per second).

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.