• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.159-159
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• 2016

Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

• Corrosion Science and Technology
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• v.13 no.5
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• pp.178-185
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• 2014

Alloy 617 is considered as a candidate Ni-based superalloy for the intermediate heat exchanger (IHX) of a very high-temperature gas reactor (VHTR) because of its good creep strength and corrosion resistance at high temperatures. Helium is used as a coolant in a VHTR owing to its high thermal conductivity, inertness, and low neutron absorption. However, helium inevitably includes impurities that create an imbalance in the surface reactivity at the interface of the coolant and the exposed materials. As the Alloy 617 has been exposed to high temperatures at $950^{\circ}C$ in the impure helium environment of a VHTR, the degradation of material is accelerated and mechanical properties decreased. The high-temperature strength, creep, and corrosion properties of the structural material for an IHX are highly important to maintain the integrity in a harsh environment for a 60 year period. Therefore, an alloy superior to alloy 617 should be developed. In this study, the mechanical and high-temperature corrosion properties for Ni-Cr alloys fabricated in the laboratory were evaluated as a function of the grain boundary strengthening and alloying elements. The ductility increased and decreased by increasing the amount of Mo and Cr, respectively. Surface oxide was detached during the corrosion test, when Al was not added to alloy. However the alloy with Al showed improved oxide adhesive property without significant degradation and mechanical property. Aluminum seems to act as an anti-corrosive role in the Ni-based alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.771-775
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• 2010

In this study, piezoelectric and dielectric properties of the $(Na_{0.5}K_{0.5})NbO_3-(1-x)(Bi_{0.5}Na_{0.5})TiO_3-xBaTiO_3$ [NKN-(1-x)BNT-xBT] ceramics were investigated. The lead-free NKN-(1-x)BNT-xBT ceramics were fabricated by a conventional mixed oxide method. The results indicate that the addition of $BaTiO_3$ significantly influences the sintering, microstructure, phase transition and electrical properties of NKN-BNT ceramics. A gradual change in the piezoelectric and dielectric properties was observed with the increase of BT contents. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the morphotropic phase boundary (MPB). The $d_{33}$=184 pC/N, $k_p$=0.38, dielectric constant=1455 with dielectric loss value of less than 1% were obtained for the NKN-0.95BNT-0.05BT ceramics sintered at $1150^{\circ}C$ for 2h. These results demonstrate that the NKN-(1-x)BNT-xBT ceramics is an attractive candidate for lead-free piezoelectric materials.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.4
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• pp.69-76
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• 2015

Recently, environmental sustainability of the transitional explosives and propellants is an issue of growing importance in energetic materials. For examples, ammonium perchlorate(AP) as an solid propellants oxidizer could create a poisonous gas and atmospheric pollutions, such as HCl. Among the several oxidizers, hydrazinium nitroformate(HNF) is an effective candidate substance for eco-friendly oxidizer, which has high density, pressure index, and less smog generating property during combustion for the Divert and Attitude Control System(DACS). This study was confirmed a synthesis through various conditions, was performed for the essential data of solubility the crystallization process. Also, crystallization process such as cooling, drowning-out and sonication were performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.35.1-35.1
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• 2010

The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

• Biomolecules & Therapeutics
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• v.26 no.2
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• pp.201-209
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• 2018

G protein-coupled receptor 119 (GPR119) is expressed in the pancreas and gastrointestinal tract, and its activation promotes insulin secretion in the beta cells of the pancreatic islets as well as the secretion of glucagon-like peptide-1 (GLP-1) in intestinal L cells, consequently improving glucose-stimulated insulin secretion. Due to this dual mechanism of action, the development of small-molecule GPR119 agonists has received significant interest for the treatment of type 2 diabetes. We newly synthesized 1,2,4-triazolone derivatives of GPR119 agonists, which demonstrated excellent outcomes in a cyclic adenosine monophosphate (cAMP) assay. Among the synthesized derivatives, YH18968 showed cAMP=2.8 nM; in GLUTag cell, GLP-1secretion=2.3 fold; in the HIT-T15 cell, and insulin secretion=1.9 fold. Single oral administration of YH18968 improved glucose tolerance and combined treatment with a dipeptidyl peptidase 4 (DPP-4) inhibitor augmented the glucose lowering effect as well as the plasma level of active GLP-1 in normal mice. Single oral administration of YH18968 improved glucose tolerance in a diet induced obese mice model. This effect was maintained after repeated dosing for 4 weeks. The results indicate that YH18968 combined with a DPP-4 inhibitor may be an effective therapeutic candidate for the treatment of type 2 diabetes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.1
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• pp.65-73
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• 2006

The high temperature occurs due to the combustion gas from engine in unmanned aerial vehicles (UAV). The high temperature may cause serious damages in UAV structure. The Functionally Graded Material (FGM) is chosen as a candidate material of the engine duct structure. A functionally graded material (FGM) is a two- component mixture composed by compositional gradient materials from one material to the other. In contrast, traditional composite materials are homogeneous mixtures, and involve compositions between the desirable properties of the component materials. Since significant proportions of an FGM contain the pure form of each material, the need for compromise is eliminated. The properties of both components can be fully utilized. Thermal stress analysis of FGM layers (20, 40, 60, 80 and 100) is performed in this paper. In addition, the creep behavior of FGM applied in duct structure of an engine is analyzed for better understanding of FGM characteristics.