• Journal of the Korean Society for Heat Treatment
• /
• v.15 no.4
• /
• pp.172-177
• /
• 2002

The steady-static creep behaviors of Ti-6Al-4V alloy, using the constant stress creep tester, were investigated over the temperature range of $510{\sim}550^{\circ}C$(0.42~0.44Tm) and the stress range of 200~275 MPa($20.41{\sim}28.06kg/mm^2$). The stress exponents(n) for the static creep deformation of this alloy were 9.85, 9.35, 9.24 and 8.85 at the temperature of 510, 525, 535 and $550^{\circ}C$, respectively. The stress exponent(n) decreased with increasing the temperature and became close to about 5. The apparent activation energies(Q) for the static creep deformation were 254.4, 241.8, 234.4 and 221.9 kJ/mole for the stress of 200, 225, 250 and 275MPa, respectively. The activation energy(Q) decreased with increasing the stress. From the above results, it can be concluded that the static creep deformation for Ti-6Al-4V alloy was controlled by the dislocation climb over the ranges of the experimental conditions. Larson-Miller Parameter(P) for the crept specimens of Ti-6Al-4V alloy under the static creep conditions was obtained as $P=(T+460)({\log}\;t_r+21)$. The failure plane observed by SEM showed up dimple phenomenon at all range.

• Korean Journal of Materials Research
• /
• v.11 no.11
• /
• pp.960-964
• /
• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• KSBB Journal
• /
• v.23 no.1
• /
• pp.83-89
• /
• 2008

Food wastewater derived from the three-stage methane fermentation system developed in this lab contained high concentration organic substances. The organic wastewater should be treated through advanced wastewater treatment system to satisfy the "Permissible Pollutant Discharge Standard of Korea". In order to treat the organic wastewater efficiently, several optimum operation conditions of a modified $UV/TiO_{2}$ photocatalytic system have been investigated. In the first process, wastewater was pre-treated with $FeCl_{3}$. The optimum pH and coagulant concentration were 4.0 and 2000mg/L, respectively. Through this process, 52.6% of CODcr was removed. The second process was $UV-TiO_{2}$ photocatalytic reaction. The optimum operation conditions for the system were as follows: UV lamp wavelength, 254 nm; wastewater temperature, $40^{\circ}C$; pH 8.0; and air flow rate, 40L/min, respectively. Through the above two combined processes, 69.7% of T-N and 70.9% of CODcr contained in the wastewater were removed.

• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.954-960
• /
• 2003

To develop mobile phone antenna modules, glass-ceramics composites that are 20∼80 dielectric constant materials which has been fabricated. The glass-ceramics composites were based in the BNT (BaO-Nd$_2$O$_3$-TiO$_2$), and properties-a sintering and dielectric property-were investigated in its composites according to the $K_2$O-CaO-P$_2$O$_{5}$ system glass frits. The prepared ceramics were sintered at 900∼120$0^{\circ}C$ with the glass frit contents ranging from 10 to 40 wt%. The shrinkage and relative density grew into increasing glass frits and sintering temperature. Sintered composites showed the tendency that the dielectric constant ($\varepsilon$$_{r}$) and quality factor (Q${\times}$f) decreased in increasing glass frits and sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.304-304
• /
• 2010

최근 생활에 편리하며 휴대하기 좋은 전자기기들이 개발되고 있다. 휴대폰이나 MP3와 같은 전자기기들은 거의 필수품이라고 할 정도로 우리의 일상생활에 근접하여 있다. 그 종 대표적으로 휴대폰의 종류로 스마트폰과 같은 터치스크린을 이용한 사례는 점차 상승하고 있으며 시간이 지날수록 그 수요는 더욱 많아지고 있다. 때문에 몰입감 제공을 위하여 햅틱장치의 채용이 일반화 되고 있다. 햅틱장치란 가상환경이나 원거리에 있는 환경과 사용자가 상호 작용할 때 사용자에게 촉감이나 힘의 정보를 전달하여 주는 장치로 진동 및 회동 저항에 의해 사용자로 하여금 촉감들 느낄 수 있도록 하는 장치를 뜻한다. 즉, 현실감을 전달을 중점으로 하는 햅틱장치는 빠른 응답 속도와, 진동의 주파수와 크기는 독립적으로 제어가 가능해야 하며 기계적 수용기들을 직접적으로 자극할 수 있어야 한다. 하지만 모바일 햅틱장치의 경우 크기 및 소비전력의 문제로 모든 스펙을 만족하기에는 어려워 좀 더 한정적인 느낌을 제공할 수 없다. 현재까지 모바일 장치에서 햅틱 피드백을 위하여 진동모터나, 솔레노이드, 압전 액츄에이터 등이 많이 사용되어 지고 있다. 그 중 압전 액츄에이터는 입력에너지를 기계적 출력에너지로 변환되는 효과를 이용 한 것으로 압력 센서, 초음파 센서 등 많은 분야에서 응용되고 있으며 변위 범위는 작지만, 크기가 매우 작고 변위 정밀도가 높으며 발생력과 응답속도가 빠르다는 장점이 존재한다. 이를 이용한 햅틱 압전 엑츄에이터의 제작에 사용되는 압전 세라믹스는 높은 전기적 특성을 가질수록 더 졸은 효율을 가지며 이로 인하여 보다 좋은 전기적 특성을 가지는 압전 세라믹스를 필요로 한다. 현재 많이 사용되는 PZT계 세라믹스는 우수한 전기적 특성으로 많이 사용되고 있지만 Pb의 유독성으로 인한 환경문제로 Pb가 포함된 제품을 제한하고 있어 현재 Lead-free의 연구가 이루어지고 있다. Lead-free중 Ba$(Ti_{0.8}Zr_{0.2})O_3$(BZT)는 PZT계 세라믹스를 대체할 차세대 압전 재료로 주목받고 있다. 일반적으로 Lead-free의 압전계수($d_{33}$=100~300pC/N)는 비교적 낮은 값을 보이지만 BZT의 압전계수(BZT $d_{33}$~620pC/N)는 PZT계 세라믹스의 압전계수($d_{33}$=500~600pC/N)와 비교하여 부족하지 않은 압전계수를 보여주며 PZT를 대체할 재료로 주목받고 있다. 본 실험은 햅틱 압전 엑츄에이터용 무연 압전세라믹스의 제작을 위하여 Ba$(Ti_{0.8}Zr_{0.2})O_3-(Ba_{0.7}Ca_{0.3})-TiO_3$(BZT -BCT)의 조성으로 유전 및 압전 특성을 조사하였다.

• Journal of the Korean Ceramic Society
• /
• v.37 no.10
• /
• pp.975-980
• /
• 2000

스테인레스 스틸 기판 위에 Pb($Zr_{0.45}$ $Ti_{0.55}$) $O_3$후막을 졸-겔 스핀 코팅법으로 제조하였다. 스테인레스 스틸은 그 자체로 좋은 도체이지만 PZT 후막의 강유전 특성을 개선하고자 Ru $O_2$박막을 중간층 겸 하부전극으로 사용하였다. PZT 전구체 용액을 코팅하고 급속 열처리하였을 때 5$50^{\circ}C$ 이하에서 pyrochlore 상이 먼저 나타났고 이 transient 상은 61$0^{\circ}C$에서 모두 perovskite 상으로 변화하였다. $600^{\circ}C$에서 열처리된 PZT 후막은 잔존하는 pyrochlore로 인해 걸어준 전기장에 무관하게 5-7$\mu$C/$ extrm{cm}^2$의 낮은 $P_{r}$값을 나타내었으나 61$0^{\circ}C$ 이상에서 열처리된 시편들은 모두 25$\mu$C/$\textrm{cm}^2$ 이상의 잔류분극을 가지고 있었다. 또한 Ru $O_2$중간층이 PZT의 강유전성에 미치는 영향을 조사하였을 때 잔류분극 값은 거의 영향을 받지 않았으나 항전계 값은 상당한 영향을 받았다. 즉 100nm 두께의 Ru $O_2$박막을 중간층으로 사용할 경우 중간층 없이 직접 스테인레스 스틸 위에 코팅할 때에 비해 항전계 값을 45% 가량 줄일 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.6
• /
• pp.436-441
• /
• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.234-235
• /
• 2007

Transparent nanosized $TiO_2$ sol has been made by sol-gel method, using Titanium(IV) isopropoxide precursor. To promote hydrolysis for titania is needed excess water, Oil bath and temperature about $80^{\circ}C$. $TiO_2$ sol is peptized ranging from pH 1 to 1.5 using hydrochloric acid for the stability of sol during a condensation reaction. The average particle size of $TiO_2$ sol was approximately 20nm. $TiO_2$-sillane sol was synthesized by surface treatment using MTMS to the $TiO_2$ sol. TEM analysis has been used to check the degree of dispersion and FT-IR analysis has been used to see if the sillane has been chemically bonded on the surface of $TiO_2$.

• Journal of the Korean Society for Heat Treatment
• /
• v.16 no.6
• /
• pp.329-334
• /
• 2003

Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.

• Korean Journal of Materials Research
• /
• v.3 no.2
• /
• pp.131-139
• /
• 1993

Abstract Alloying elements such as AI, Ti, Nb and B in the extra low carbon AI-killed steel precipitate as nitrides or carbides and change the recrystallization texture structure of the steel during heattreatment with the result of strong effects on the deep drawability of the steel sheet. In this study the effects of fine precipitates such as nitrides and carbides on the texture of extra low carbon steels into which Ti, Nb, B, P, Si and Mn were added as alloying elements were investigated by means of TEM, SEM and optical microscopic analyses. Fine N$b_2$C and T$i_2$AIN precipitates are mainly observed in the steel containing both Nb and Ti, while fine AIN and coarse BN precipitates are observed in the Nb~containing steel and coarse T${i_4}{N_3}$ and ${N_10}{N_22}$/T$i_68$ precipitates are observed in the Ti-containing steel. The grain size of the Ti containing steel is larger than that of the Nb containing steel and that of the one containing both Nb and Ti.