• Korean Journal of Materials Research
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• v.12 no.10
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• pp.814-819
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• 2002

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.23-28
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• 2004

We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of Welding and Joining
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• v.34 no.5
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• pp.33-40
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• 2016

The microstructures and the creep rupture properties of dissimilar welds between the Ni-based superalloy Inconel 740H and the non-stabilized austenitic stainless steel TP316H have been characterized. The welds were produced by shielded metal arc (SMA) welding process with the AWS A5.11 Class ENiCrFe-3 filler metal, commonly known as Inconel 182 superalloy. Postweld heat treatment at $760^{\circ}C$ for 4 hours was conducted to form ${\gamma}^{\prime}$ strengthener in Inconel 740H. The austenitic weld metal produced by Inconel 182 had a dendritic microstructure, and grew epitaxially from the both sides of Inconel 740H and TP316H base metals. Since both Inconel 740H and TP316H did not undergo any solid-state transformation during welding process, there were no heat-affected-zone (HAZ) sub-regions and the coarsoned grains near the weld interface were limited to a narrow region. The hardness of Inconel 182 weld metal was ~220 Hv. The gradual hardness decrease was detected at HAZ of TP316H, and the TP316H base metal displayed the lowest hardness value (~180 Hv) whilst the Inconel 740H showed the highest hardness value (~400 Hv). Fracture after creep occurred at the center of weld metal, regardless of creep condition. It was found that during creep the cracks initiated and propagated along interdendritic regions and grain boundaries at which Laves particles enriched in Nb, Si and Cr were present. The appropriate design of weld metal was discussed to suppress the creep-induced cracking of the present dissimilar weld.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.99-104
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• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

• Journal of the Korean Association of Geographic Information Studies
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• v.7 no.2
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• pp.78-86
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• 2004

Recently GPS and mobile GIS technologies based on LBS(location based service) have played an important role as DSS(decision supporting system) for domestic forest fire extinguishment policies. In this study forest fire extinguishments information management system based on mobile GIS technique was designed to seize the exact location on wireless network so that it helps to guide the safe and efficient extinguishments affairs and provide the extinguishments environment toward ground fighting teams and the central forest government in real time. Moreover, possibly to operate this system, the foundation technologies by the name of '.gci' such as the spatial data compression method, the spatial data transmission method over wireless network and the spatial analysis interface on PDA should be mainly considered. Especially, in this study the spatial data compression method having high compression rate from 51% to 62% for each polygon, line, and point data, without the loss of data was developed.