• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.45-46
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• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

• 전자공학회논문지A
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• 제28A권12호
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• pp.24-30
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• 1991

As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.

• 한국세라믹학회지
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• 제37권4호
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• pp.368-375
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• 2000

Fracture toughness of particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC was analysed theoretically. According to the suggested particle bridging model for obtaining the R-curve height, the crack extension resistance for the long crack was linearly proportional to the residual calmping stress at the interface between the second phase and the matrix. It was also a function of the particle size and the content. It was confirmed that the rising R-curve behavior of Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ was owing to the strong crack bridging by SiC particles. For Al2O3/ZrO2/SiC composites, the tensional stress from the 3${\mu}{\textrm}{m}$ SiC particles was large enough to activate the spontaneous transformation of the ZrO2. The crack extension resistance due to the particle bridging mechanism did not seem to be affected much by the coupled toughening, but its resultant toughness increase could be significantly smaller due to the dependency on the matrix toughness.

• 한국결정성장학회지
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• 제32권5호
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• pp.212-217
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• 2022

고온의 탄화규소 단결정성장공정에서는 탄화규소-흑연간의 열팽창계수의 차이로 인한 열응력이 크게 발생할 수 있어 흑연부재로부터 탄화규소 종자정이 분리되어 성장 중에 종자정이 떨어지는 문제가 발생할 수 있다. 그러나 이러한 탄화규소 종자정 모듈의 접합특성에 대한 연구는 현재까지 거의 보고된 바가 없다. 본 연구에서는 탄화규소-흑연 간의 접합특성을 평가하기 위해 3점 굽힘시험법을 응용한 복합모드꺾임시험(Mixed-Mode Flexure Test)을 통해 탄화규소-흑연을 서로 다른 접합제를 적용하여 접합한 시편의 접합 특성을 확인하고, 흑연 접착제의 미세구조를 분석하기 위해 라만분광법(Raman spectroscopy), X선 광전자분광법(X-ray Photoelectron Spectroscopy) 및 X선 전산화 단층촬영법(X-ray Computed Tomography)을 활용하였다. 이러한 일련의 과정을 통하여 선별한 접착성이 우수한 접착제를 적용하여 직경 50 mm급의 탄화규소 종자결정모듈을 제작하고, 이를 적용하여 고온의 상부종자용액성장 공정을 이용하여 공정 중 종자정의 탈락없이 성공적으로 직경 50 mm급의 탄화규소 단결정을 성장시켰다.

• 접착 및 계면
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• 제7권4호
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• pp.32-38
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• 2006

A series of organic-inorganic hybrids, PCL/EP/$SiO_2$, involving epoxy resin and triethoxysilane-terminated polycaprolactone elastomer (PCL-TESi) were prepared via polymerization of diglycidyl ether of bisphenol A (DGEBA) with amine curing agent KB-2 and sol-gel process of PCL-TESi. The curing reactions were started from the initially homogeneous mixture of DGEBA, KB-2 and the PCL-TESi. The organicinorganic hybrids containing up to 4.95% (wt) of $SiO_2$ were obtained and characterized by FT-IR, transmission electron microscopy (TEM), differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). It was experimentally shown that the swelling property in toluene, morphologies and thermal properties of the resulting hybrids were quite dependent on the contents of $SiO_2$. The crosslink network density decreases with increasing of the PCL-TESi. And in TEM, the phase separated morphology of these hybrids was found, which resulted from the coagulation of Si-O-Si networks resulting from $-Si(OC_2H_5)_3$ of PCL-TESi self-curing by hydrolytic silanol condensation, with the advancement of the curing reaction in the modified epoxy resin systems. Meanwhile, the change of the $SiO_2$ content made the morphologies changed from aggregated particles of Si-O-Si in the hybrid to nanocluster of interconnected Si-O-Si particles, then to aggregated Si-O-Si dispersing in the continuous cured epoxy phase again, and last to co-continuous interpenetrating network. The glass transition behavior of the hybrid material was cooperative motion of large chain segments, which were hindered by the inorganic Si-O-Si network. And in TG analysis, the characteristic temperature at 5% of weight loss was evidently increased from $120.5^{\circ}C$ of pure cured epoxy to $277.6^{\circ}C$ of 3.84% (wt) of $SiO_2$ modified epoxy due to the existence of Si-O-Si when PCL-TESi was added in the hybrid.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1988년도 제7회 학술강연회초록집
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• pp.39-42
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• 1988

요업체 절삭공구(ceramic tool)는 공구강이나 초경제품에 비해 고속 절삭 작업이 가능하며 생산성을 높일 수 있기 때문에 최근 주목을 받고 있다. 본 실험에서 모재(substrate)로 사용된 $Si_3N_4$-TiC ceramic은 요업체 공구중에서 파괴인성이 우수하며, 주철이나 초합금을 절삭할 때 우수한 성능을 나타낸다. 그러나 요업체 절삭공구중에서 경도가 낮은 편에 속하며, Fe,Mn,O와 $Si_3N_4$가 화학적 반응을 일으켜서, steel을 절삭할 때 상면 마모(crater wear)가 심하게 발생하기 때문에 우수한 성능을 나타내지 못하고 있는 실정이다. 따라서 이러한 단점을 보완하기 위해 공구의 표면에 보호피막(protective coating)을 입히는 것은 필수적이다. 본 연구에서는 반응변수들이 TiC 및 TiN 증착층의 증착속도, 미세구조, 화학적 조성 및 증착층과 substrate 사이의 interface를 조사하여 각 증착층의 최적증착조건을 규명하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.244-244
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• 2007

• Advanced Composite Materials
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• 제18권4호
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• pp.351-364
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• 2009

The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.32-32
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• 2009

실리콘 박막 태양전지에서 전면 투명전도막(TCO)은 태양전지의 전기, 광학적 특성을 결정하는 중요한 기능을 한다. ZnO:Al TCO는 기존에 사용되던 $SnO_2:F$와는 비정질 실리콘(a-Si:H) 박막 태양전지의 윈도우 층으로 사용되는 p a-SiC:H와의 일함수(work function) 차이로 인해 접촉전위(contact barrier)를 형성하게 되며 이로 인해 태양전지의 충진율(fill factor)이 $SnO_2:F$에 비해 감소하는 단점을 보인다. 본 연구에서는 ZnO:Al/p a-SiC:H 계면의 접촉전위 발생원인 및 태양전지 충진율 감소현상에 관한 정확한 원인규명을 위해 다양한 특성을 갖는 버퍼층을 삽입하여 계면특성 및 태양전지의 동작특성을 분석하고자 한다.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.