• Solar Energy
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• v.20 no.1
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• pp.11-20
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• 2000

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.444-448
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• 2016

Hollow silicon/carbon (H-Si/C) composites as anode materials for lithium ion batteries were investigated to overcome the large volume expansion. H-Si/C composites were prepared as follows; hollow $SiO_2\;(H-SiO_2)$ was prepared by adding $NaBH_4$ to $SiO_2$ synthesized using $st{\ddot{o}}ber$ method followed by magnesiothermic reduction and carbonization of phenolic resin. The H-Si/C composites were analyzed by XRD, SEM, BET and EDX. To improve the capacity and cycle performance, the electrochemical characteristics of H-Si/C composites synthesized with various $NaBH_4$ contents were investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using H-Si/C composite ($SiO_2:NaBH_4=1:1$ in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC : DMC : EMC = 1 : 1 : 1 vol%) has better capacity (1459 mAh/g) than those of other composition coin cells. It is found that the coin cell ($SiO_2:NaBH_4=1:1$ in weight) has an excellent capacity retention from 2nd cycle to 40th cycle.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.46-54
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• 1993

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.29-35
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• 1998

Substrates, SiC raw materials and graphite crucibles were purified for growing the high quality 6H-SiC single crystal ingot. Especially, XRD data of raw materials were analyzed before and after purification. We have grown 6H-SiC single crystal ingot up to 33 mm in diameter and 11 mm in length and SiC wafer for using the substrate and observing the internal defects was about 33 mm in diameter and 0.5 mm in thickness. Utilizing optical microscpe and Raman spectroscopy, internal defects density and crystallinity of the SiC wafer obtained by purification processes before crystal growth were measured. As a result, micropipe density and planar defect density were 100/$\textrm{cm}^2$ and 30/$\textrm{cm}^2$ respectively. Therefore, high quality 6H-SiC single crystal could be grown because internal defects density of 6H-SiC single crystal ingot was decreased by the purification processes before crystal growth.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.545-550
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• 1998

Phase reactions at W /6H- SiC interfaces during heat treatments were investigated by X- Ray diffractometer and transmission electron microscopy. No detectable reactions were found after annealing at up to 900$0^{\circ}C$ whereas formation of $W_5Si_3$ and $W_2C$$0^{\circ}C$ This result is consistent with a previous report that the reactions between 3C-SiC and W occurs at llOOoe, and suggests that $W_5Si_3$ and $W_2C$ are the stable phases in this temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.