• Restorative Dentistry and Endodontics
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• v.24 no.1
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• pp.156-165
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• 1999

The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength between new and old composites. Circular cavities prepared on the center of acrylic resin mold and the prepared cavities were filled with composite resin. They randomly assigned into control group and 8 groups according to the difference in surface treatments of old composites; Control group: no surface treatment, Group 1: surface treated with #120 SiC paper & bonding agent, Group 2: surface treated with #400 SiC paper & bonding agent, Group 3: surface treated with #120 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 4: surface treated with #400 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 5: surface treated with #120 SiC paper, primer & bonding agent, Group 6: surface treated with #400 SiC paper, primer & bonding agent, Group 7: surface treated with #120 SiC paper, 32% $H_3PO_4$, primer & bonding agent, Group 8: surface treated with #400 SiC paper, 32% $H_3PO_4$, primer & bonding agent. New composites were applicated on the old composites of experimental groups. The shear bond strengths for the experimental specimen were measured and the results were analyzed by using one way ANOVA. The observations of surface morphology after SiC paper roughening and debonded surface morphology after shear bond strength test were done by SEM. The results were as follows; 1. Shear bond strengths for specimens roughened with #120 SiC paper matching with the particle size of coarse diamond bur were significantly higher than those for the specimens with #400 SiC paper(P<0.05). By SEM, the surface of the specimens roughened with #120 SiC paper was more irregular than the specimens with #400 SiC paper. 2. Shear bond strengths for specimens treated with 32% $H_3PO_4$ etchant, primer, bonding resin were significantly higher than those for specimens treated with 32% $H_3PO_4$ and bonding resin(P<0.05). 3. Shear bond strengths for the specimens treated with 32% $H_3PO_4$ etchant and bonding resin were significantly higher than those for specimens treated with only bonding resin(P<0.05). There was no remarkable change of surface morphology after 32% $H_3PO_4$ etching. 4. It was possible to observe mixed fracture patterns (the cohesive fracture of old composite and the adhesive fracture between old and new composite) in the specimens roughened with #120 SiC paper, but almost adhesive fracture in the specimens roughened with #400 SiC paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.238-246
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• 1996

High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

• Advanced Composite Materials
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• v.18 no.4
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• pp.351-364
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• 2009

The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.783-788
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• 2002

In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: Si($CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.30-33
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• 1999

본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.