• 한국염색가공학회지
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• 제12권2호
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• pp.103-110
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• 2000

To examine the physical properties of POY through the microstructure control, the crystal structure such as the crystallinity, the crystallite size, the orientation, the shrinkage, the tensile properties, and the thermal stress of POY(80/48, SD) were examined at different draw ratios and annealing temperatures. From the examination following conclusions were obtained : 1. The crystallinity was more effected by the heat setting temperature than by the draw ratio. The increasing rate was greatest at the heat setting temperature range of $170~190^\circ{C}$. 2. The crystallite size perpendicular to the fiber axis was more effected by the annealing temperature at lower draw ratios. On the other hand, the crystal and amorphous orientations were more effected by the heat setting at higher draw ratios. 3. The boiling shrinkage did not change significantly, but the total shrinkage showed 13% at the draw ratio 1.9 and the heat setting temperature $170^\circ{C}$. 4. The maximum thermal stress increased with increasing the draw ratio and decreasing the heat setting temperature in the temperature range of $170~210^\circ{C}$. At the draw ratio 1.9 and the heat setting temperature $170^\circ{C}$, the maximum thermal stress found was 1.1gf/d. 5. In the heat setting temperature above $170^\circ{C}$ after the drawing, the crystallinity, the crystallite size, the orientation, and the strength increased with increasing temperature, but the shrinkage and the maximum thermal stress decreased with increasing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.101-104
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• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.

• 한국세라믹학회지
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• 제39권8호
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• pp.758-763
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• 2002

초음파 에너지(28 kHz, 40 kHz, 70 kHz)를 사용하여 수직자기기록용 Ba-ferrite의 자기적 특성 향상에 대하여 조사하였다. 한편, 분산된 Ba-ferrite를 sheet에 수직으로 배향시키기 위해 다양한 형태의 배향기들을 사용하여 실험을 행하였다. Ba-ferrite가 도포된 sheet 중 초음파 에너지가 40 kHz이고 초음파 처리 시간이 2시간에서 자기적 특성인 S. Q. (Squareness Ratio)와 O. R. (Orientation Ratio)값이 각각 0.7831과 2.87로 비교적 좋은 값을 얻을 수 있었다. 이때 얻어진 sheet의 표면 형상을 SEM(Scanning Electron Microscopy)으로 분석한 결과 Ba-ferrite가 자화용이축인 c 축에 수직방향으로 배향되어 수직자기기록용으로서의 응용에 가능성을 보였다. 또한, VSM(Vibrating Sample Magnetometer)으로 자기장의 각도변화에 따른 S. Q.의 측정시, 자기장의 각도가 증가함에 따라 S. Q. 값이 감소하였고 이는 수직자기기록용으로써 가능성을 재확인 시켜주었다.

• Journal of Magnetics
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• 제16권3호
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• pp.220-224
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• 2011

Die-upset magnets from a mechanically-milled Pr(Co,In)$_5$-type alloy are known to have a peculiar texture; the easy magnetization axis (c-axis) is perpendicular to the pressing direction. This peculiar texture is thought to be linked closely to the anisotropic mechanical properties of Pr(Co,In)$_5$-type hexagonal compounds. The hardness of the Pr(Co,In)$_5$-type crystal was measured using selectively grown grains in an annealed $Pr_{17}Co_{82}In_1$ alloy button, and the crystallographic orientation was determined by observing the magnetic domain image. The hardness (549 VHN) on the plane with a 'cogwheel'-type domain image was significantly higher than that (510 VHN) on the plane with a 'cigar'-type domain image, indicating that the inter-layer bonding force between the (000l) basal planes is stronger than that between the (hki0) planes. This suggests that the most probable slip plane is the (hki0) plane parallel to the c-axis. During die-upsetting of the Pr(Co,In)$_5$-type alloys the deformation proceeds by (hki0) plane slip, and the c-axis rotates to ultimately become oriented perpendicular to the pressing direction. It is proposed that the peculiar texture in the die-upset Pr(Co,In)$_5$-type magnets is probably developed by slip deformation of the (hki0) plane of the Pr(Co,In)$_5$-type grains.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.481-486
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• 2001

ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.

• 산업기술연구
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• 제21권A호
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• pp.221-229
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• 2001

The effect of Mo underlayer on the magnetic properties of CoCrTa/Cr films deposited on glass substrates were investigated. The coercivity increased and the coercivity squareness decreased by introducing Mo underlayer. The coercivity increase was attributed to the increase of in-plane c-axis orientation and magnetic isolation of Co grains deposited on Cr/Mo underlayer. The decrease of coercivity squarenesses seemed to be caused by the increase of magnetic isolation. The increase of magnetic isolation of Co grains was attributed to the diffusion of Mo atoms into grain boundaries of Co films and the physical isolation of Co grains. The coercivity of CoCrTa/Cr/Mo showed maximum values at Mo thickness of $400{\AA}$. The appearance of the maximum coercivity at that thickness was attributed to the development of strong $Co(10{\bar{1}}0)$ and $Co(10{\bar{1}}1)$ preferred orientation.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.798-807
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• 2002

ZnO thin films on Si wafer were deposited by RF magnetron reactive sputter with various RF power, chamber pressure, argon/oxygen gas ratios ana substrate temperatures. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD, AFM, RBS, and electrometer(keithley 617). ZnO films showed a strong c-axis preferred orientation. Surface roughness and resistivity were changed by the argon/oxygen gas ratio. The minimum surface roughness of 12${\AA}$ and maximum resistivity of $10^8\Omega cm$ were achieved at Ar/O$O_2$=0/100.