• Korean Journal of Computational Design and Engineering
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• v.7 no.4
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• pp.254-261
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• 2002

Small marine propeller is generally machined by 5-axis machining. This paper suggests a method to create geometric model from point array data and 4-axis machining NC data for propeller. With conventional method, the setting posture should be changed, because propeller has front and back surface of wing. The change of setting posture has a bad influence on precision of propeller. So this paper pro-poses a method to machine propeller by single setup for 4-axis machining. The cutter moves to parallel direction of the XY plane. To determine the cutter orientation efficiently, the' tilting guiding line' is proposed. A proposed algorithm is written in C language and successfully applied to the 5-axis milling machine of industrial field.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.45.2-45.2
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• 2019

The main-belt asteroid (5247) Krylov is known as a Non-Principal Axis (NPA) rotator. However, the shape model and spin state of this asteroid were not revealed. The physical model of an asteroid including spin state and shape is regarded to be important to understand its physical properties and dynamical evolution. Thus, in order to reconstruct the physical model of Kryolv, we applied the light curve inversion method using not only the optical light curves observed with ground-based telescopes in three apparitions during 2006, 2016, and 2017, but also the infrared light curves obtained with the Wide-field Infrared Survey Explorer (WISE) in 2010. We found that it is rotating in Short Axis Mode (SAM) with the rotation and precession periods of 368.71 hr and 67.277 hr, respectively. The orientation of the angular momentum vector is (298°, -58°) in the ecliptic coordinate system. The ratio of moments of inertia of the longest axis to the shortest axis is I_a/I_c = 0.36; the ratio of moments of inertia of the intermediate axis to the shortest axis is I_b/I_c = 0.96. Finally, the excitation level of this asteroid is found to be rather low with a ratio of the rotational kinetic energy to the basic spin state energy as E/E₀ ≃ 1.024. We will briefly discuss the possible evolutionary process of Krylov in this presentation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1128-1132
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• 2002

$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

• Structural Engineering and Mechanics
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• v.47 no.1
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• pp.75-98
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• 2013

This study focuses on shear strengthening performance of simply supported reinforced concrete (RC) T-beams bonded by glass fibre reinforced polymer (GFRP) strips in different configuration, orientations and transverse steel reinforcement in different spacing. Eighteen RC T-beams of 2.5 m span are tested. Nine beams are used as control beam. The stirrups are provided in three different spacing such as without stirrups and with stirrups at a spacing of 200 mm and 300 mm. Another nine beams are used as strengthened beams. GFRP strips are bonded in shear zone in U-shape and side shape with two types of orientation of the strip at $45^{\circ}$ and $90^{\circ}$ to the longitudinal axis of the beam for each type of stirrup spacing. The experimental result indicates that the beam strengthened with GFRP strips at $45^{\circ}$ orientation to the longitudinal axis of the beam are much more effective than $90^{\circ}$ orientation. Also as transverse steel increases, the effectiveness of the GFRP strips decreases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.246-250
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• 2000

Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.126-130
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• 2011

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.