• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.5
• /
• pp.808-815
• /
• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Korean Journal of Materials Research
• /
• v.29 no.8
• /
• pp.463-468
• /
• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.5-8
• /
• 2004

전자빔 증착법 (e-beam evaporation)를 이용하여 $TiO_2$ 박막과 $Al_2O_3/TiO_2$ 이중박막을 제조한 후, $800^{\circ}C$ 공기 중에서 열처리하여, 알루미나 층의 유무에 따른 두 박막의 전기전도 특성과 100 ppm CO 가스에 대한 반응 특성을 고찰하였다. 알루미나 층이 증착되지 않은 순수한 $TiO_2$ 박막의 전기 전도도 (in dry air)는 $100^{\circ}C-500^{\circ}C$ 온도범위에서 온도가 증가함에 따라 증가하였으며 알루미나 층이 증착된 $Al_2O_3/TiO_2$ 이중막보다 높은 전도도를 나타내고 있으나, 약 $300^{\circ}C$이상의 온도에서는 $Al_2O_3/TiO_2$ 이중막의 전기 전도도가 급격히 증가하여 $TiO_2$ 박막의 전기전도도 보다 더 높은 값을 나타내었다. 또한 온도에 따른 CO 가스 감도(sensitivity)는 $TiO_2$ 박막의 경우 $400^{\circ}C$까지는 서서히 증가하여 그 이상의 온도에서 급격히 감소하였으나, $Al_2O_3/TiO_2$ 이중막은 $250^{\circ}C$에서 감도가 급격히 증가하여 최대값을 나타내었으며, $350^{\circ}C$에서 감도가 급격히 감소하는 특성을 나타내었다.

• Resources Recycling
• /
• v.15 no.2 s.70
• /
• pp.3-9
• /
• 2006

As a basic study on the conversion of molten converter slag to the ordinary portland cement, the effects of $Al_{2}O_{3}$ addition on the interface reaction between solid CaO and molten converter slag has been studied. Alumina added converter slag whose basicity was controlled to 1 and 2 was melted and hold for 30 minutes in MgO crucible at $1500^{\circ}C$. Then sintered CaO pellet heated at the same temperature was dipped into the molten slag and held for 30minutes. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of CaO pellet with the addition of $Al_{2}O_{3}$ was measured by the change of the radius or sintered CaO pellet and the interface layer was observed by SEM/EDX. As a result. At the basicity 2 slag, thickness of created $C_{3}S$ layer increased 3.5 times and quantity of $C_{6}AF_{2}\;or\;C_{4}AF$ phase increase 2 times than baisicy 1 slag.

• Journal of the Korean Ceramic Society
• /
• v.28 no.7
• /
• pp.561-567
• /
• 1991

Submicron ${\alpha}-SiC$ powder with $Al_2O_3$ addition was hot-pressed under the controlled heating and pressurizing schedule. $SiO_2$ layer on ${\alpha}-SiC$ powder was effective for the sintering of ${\alpha}-SiC$ powder when $Al_2O_3$ was used as an additive. Applying of pressure under the controlled schedule accelerated the rearrangment of SiC grains, yielding 98% of theoretical density of SiC even at $1900^{\circ}C$. Flexural strength of the specimen containing 2 wt% $Al_2O_3$ was increased as increasing the hot-pressing temperature up to $2050^{\circ}C$ and maximum value was 800 MPa, while the flexural strength of the specimen containing 10 wt% $Al_2O_3$ was decreased as increasing the hot-pressing temperature above $2000^{\circ}C$ due to the formation of continuous grain boundary phase. Fracture toughness of the specimens was in the range of $3.5~4.5\;MNm^{-3/2}$ regardless of the amount of $Al_2O_3$ addition.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1913-1915
• /
• 1999

The ${\beta}-SiC+ZrB_2$ ceramic composites were hot-press sintered and annealed by adding 1, 2, 3wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at $1950^{\circ}C$ for 4h. In this microstructures, no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 90.79% of the theoretical density and the porosity decreased with increasing $Al_2O_3+Y_2O_3$ contents. Phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_2O_3$ and $\beta$-SiC(15R). Flexural strength showed the highest of 315.46MPa for composites added with 3wt% $Al_2O_3+Y_2O_3$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $5.5328MPa{\cdot}m^{1/2}$ for composites added with 2wt% $Al_2O_3+Y_2O_3$ additives at room temperature.

• Journal of the Korean Ceramic Society
• /
• v.37 no.4
• /
• pp.314-319
• /
• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.314-319
• /
• 2013

Fabrication of nanocomposite material for the $Fe_2O_3-Al$ system by mechanical alloying (MA) has been investigated at room temperature. It is found that ${\alpha}-Fe/Al_2O_3$ nanocomposite powders in which $Al_2O_3$ is dispersed in ${\alpha}-Fe$ matrix are obtained by mechanical alloying of $Fe_2O_3$ with Al for 5 hours. The change in magnetization and coercivity also reflects the details of the solid state reduction process of hematite by pure metal of Al during mechanical alloying. Densification of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $1000^{\circ}C$ and $1100^{\circ}C$ under 60 MPa. Shrinkage change after SPS of MA'ed sample for 5 hrs was significant above $700^{\circ}C$ and gradually increased with increasing temperature up to $1100^{\circ}C$. X-ray diffraction result shows that the average grain size of ${\alpha}-Fe$ in ${\alpha}-Fe/Al_2O_3$ nanocomposite sintered at $1100^{\circ}C$ is in the range of 180 nm. It can be also seen that the coercivity (Hc) of SPS sample sintered at $1000^{\circ}C$ is still high value of 88 Oe, suggesting that the grain growth of magnetic ${\alpha}-Fe$ phase during SPS process tend to be suppressed.

• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.577-582
• /
• 1997

The mechanical properties of Al2O3-ZrO2 composites fabricated by RBAO(reaction bonded aluminium oxide) process were investigated. As the amount of ZrO2 increased the sinstered density of Al2O3-ZrO2 composites decreased slightly, but wear resistance was enhanced. Bending strength of Al2O3-ZrO2 composites increased in proportion to the amount of al in case of a fixed ZrO2 content. When the amount of Al was fixed bending strength reached its maximum value at 25 wt% ZrO2. The fracture toughness(K1c) increased with increasing content of ZrO2, but decreased with increasing Al amount. On the other hand, the fracture mode of Al2O3-ZrO2 composites was the mixed mode of inter-and transgranular fracture.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.6
• /
• pp.263-270
• /
• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.