• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.5-8
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• 2002

Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.368-370
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• 1999

Using DC faced target sputtering method we grow AIN the films on the $Al_2O_3$(0001) substrate with varying thickness(17$\AA$-1000$\AA$). We measured x-ray diffraction(XRD) profiles by synchrotron radiation($\lambda$=1.12839 $\AA$) with four circle diffractometer. The full width half maximum(FWHM) of rocking curve for the AIN (0002) diffraction of the film grown at $500^{\circ}C$ was $0.029^{\circ}$. Also, we confirmed that the stress between AIN thin film and $Al_2O_3$(0001) substrate was reduced as increasing AIN film thickness, and the critical thickness of 400~500 $\AA$, defined as a lattice constant in the film agrees with that in a bulk without stress, was obtained.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.4
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• pp.396-400
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• 2009

The demand of JIB crane to handle a container or a bulk in a vessel is increasingly because of the growth of the scale of trade through the sea. This deck crane such as JIB crane is required the weight reduction design because it is installed in the deck of a vessel due to the environment regulation. In this study first we carry out the structural analysis of JIB with respect to the luffing angle of it to calculate the maximum equivalent stress of JIB, and next the optimum design for the weight reduction design of JIB. The thickness in a cross section of JIB is adopted as the design variable, the weight of JIB as the objective function, and the von mises stress as the constraint condition for the optimum design of JIB using the ANSYS 10.0.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.601-604
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• 2008

The flow pulsation of two parallel channels is investigated using RANS and URANS approaches. The parallel channels are connected with a small gap and have different cross section areas. The ratio of a right side area and a left side area ($A_R$ / $A_L$) is 0.5. Computations are conducted using a CFX code. Turbulence models adopted for RANS are Reynolds stress model and Shear Stress Transport (SST) model. The bulk Reynolds number is 60,000. Predicted results are compared with the experimental result of Lee et al. and show the flow pulsation with the frequency of about 100 Hz at the center of the gap.

• International Journal of Reliability and Applications
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• v.5 no.1
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• pp.1-13
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• 2004

It is recently well recognized that the technique for the one-sided stress wave velocity measurement in structural materials provides measurement in structural materials provides valuable information on the state of the material such as quality, uniformity, location of cracked or damaged area. This technique is especially effective to measure velocities of longitudinal and Rayleigh waves when access to only one surface of structure is possible. However, one of problems for one-sided stress wave velocity measurement is to get consistent and reliable source for the generation of elastic wave. In this study, the laser based surface elastic wave was used to provide consistent and reliable source for the generation of elastic wave into the materials. The velocities of creeping wave and Rayleigh wave in materials were measured by the one-sided technique using laser based surface elastic wave. These wave velocities were compared with bulk wave velocities such as longitudinal wave and shear wave velocities to certify accuracy of measurement. In addition, the mechanical properties such as poisson's ratio and specific modulus(E/p) were calculated with the velocities of surface elastic waves.

• Journal of Powder Materials
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• v.10 no.3
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• pp.190-194
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• 2003

Thin Ag films deposited onto $SiO_2/Si$ substrates by DC magnetron sputtering and thereafter annealed ,it temperatures 100-50$0^{\circ}C$ are investigated by scanning tunneling and atomic forte microscopy. It is shown that the film surface topography and microstructure are considerably changed as a result of annealing. To provide a quantitative estimation of the surface topography changes of Ag films the surface fractal dimension was calculated. Elasticity and hardness of the films are studied by a nanoindentation technique. The films are found to have value of elastic modulus close to that of bulk silver while their hardness and yield stress are essentially higher.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1863-1868
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• 2004

The present study concerns a computational study of fully developed laminar flow of a Newtonian fluid through an eccentric annulus with a combined bulk axial flow and inner cylinder rotation. This study considers the identical flow geometry as in the calculation of Escudier et $al.^{(3)}$ An unexpected feature of the calculations for eccentricity ${\varepsilon}$)0.7 is the appearance of a second peak in the axial velocity, located in the narrowing gap. The distribution of the axial component of the surface shear stress has a maximum in the narrowing gap and a minimum in the widening gap.