• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 한국토양비료학회지
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• 제45권6호
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• pp.1230-1236
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• 2012

전기동력학적인 기술 처리가 시설재배 토양의 염류제거에도 효과를 보이는가를 검증하기 위하여 토양의 물리성, 화학성 및 작물생산성을 조사한 포장시험한 결과를 요약하면 다음과 같다. EK처리는 농가포장에 220 V 농가용 교류를 직류화하여 약 0.8 V $cm^{-1}$의 정전압으로 동전기 처리 하였다. 양전극의 길이는 20 cm로서 고규소철 (HSCI; High Silicon Cast Iron), 음전극은 철판 (Fe Plate)을 바닥에 깔았다. 하단부 흙 속에는 직경 10 cm 정도의 유공 PVC파이프를 매설하고 음 (-)극으로 몰려온 양 (+)이온들을 모아서 배출시켰다. EK처리에 따른 토양 물리성은 토양입단의 경우 파괴 효과가 크고 물의 침투 속도는 증가되었으나, 용적밀도와 공극율의 변화는 적었다. 한편, 토양의 화학성을 보면, 무처리구보다 EK처리구의 EC, $NO_3{^-}$-N, $K^+$, $Na^+$ 등의 주요 이온들이 급격히 감소되었고, pH, $P_2O_5$, $Ca^{2+}$ 등은 EK의 영향력이 적은 성분이었다. EK처리에 따른 작물재배 작기별로 토양화학성 감소율을 비교한 결과 $NO_3{^-}$-N 78.3 % > $K^+$ 72.3 % > EC 71.6 % $$\geq_-$$ $Na^+$ 71.5 % > $Mg^{2+}$ 36.8 %순 이었다. EK를 작물재배 이전 즉 휴경을 하면서 처리한 시험구와 작물을 재배하면서 EK를 처리한 시험구의 화학성 감소효과를 비교한 결과 작물재배 중 처리효과가 더 높았다. EK처리 후 양분의 감소가 뚜렸한 $NO_3{^-}$-N, EC 등은 처리효과가 분명하였으나, 1회의 EK처리만으로는 염류감소 지속효과가 분명하지 않으므로 2회 이상 EK처리 후 토양화학성 검정을 계속하면서 토양검정 시비를 실시하는 것이 바람직하였다. EK처리에 따른 배추생육을 보면 1차 처리 - 2차 처리- 3차 처리구의 무처리 대비 증수율은 225.5 % - 181.0 % - 124.2%로 각각 나타났다. 1차 처리 (2011.4)시 고추는 130.0 %, 2차 처리 시 상추는 248.1 %, 3차 처리 시 열무는 125.4 % 각각 증수됨으로서 공시되었던 모든 작물에서 증수효과가 인정되었다.

• 한국진공학회지
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• 제19권4호
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• pp.307-313
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• 2010

본 연구에서는 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 분말 형태의 규소(Si)와 염화니켈 수화물 $(NiCl_2{\cdot}6H_2O)$을 혼합한 후 탄소공급원인 $CH_4$ 가스를 주입하여 탄화규소 나노선(SiC nanowire)을 합성하였다. 합성 온도와 $CH_4$ 가스 유량 변화에 따른 탄화규소 나노선의 구조적 특성을 분석한 결과, 합성온도가 $1,400^{\circ}C$, $CH_4$ 가스의 유량이 300 sccm인 경우가 탄화규소 나노선의 합성에 최적화된 조건임을 라만 분광법(Raman spectroscopy)과 X-선 회절(X-ray diffraction), 주사전자현미경(scanning electron microscopy), 그리고 투과전자현미경(transmission electron microscopy) 분석을 통해 확인하였다. 합성된 탄화규소 나노선의 직경은 약 50~150 nm이며, 곧은 방향성과 높은 결정성을 가지는 입방구조(cubic structure)를 지니고 있었다.