• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.165-167
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• 1998

Nd:YAG crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molydbenum container, growth atmosphere and concentration of Neodymium ions on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 70 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were violet, transparent and could not be observed any macroscopic defects. Under the polarizing microscopoc observations with crossed polar, striations, {211} facets and inclusions were detected. With the grown crystals, prototypes of laser rods for 1.06$\mu$m laser application were manufactured and then characterized. As a result, we can get high quality of Nd:YAG laser rods with <111> and <110> axis, 63 mm in length and6.3 mm in diameter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 전문대학교육위원
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국주조공학회지
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• 제12권3호
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• pp.203-209
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• 1992

Directional solidification of Al-Ti peritetic alloys was carried out using Upward Continuous Casting Process. The morphology of a solid-liquid interface and solidification microstructures were investigated under various crystal growing conditions. The experimental results were compared with those attained by the Bridgman method. The cell spacing of the Al-Ti peritetic alloys and the primary dendrite arm spacing of the Al-Ti peritetic alloys decreased with an increase in pulling speed. The primary ${\beta}$ phase of the Al-Cr and Al-Ti peritectic alloys did not appear in solidification microstructures because of the depleted solute contents in the melt ahead of the solid-liquid interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.546-547
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• 2002

Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.9-13
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• 1998

Large vacuum Bridgman-Stockbarger (BS) equipments was composed for growing large diameter CaF2 crystals. The CaF2 crystal of 4.5-inch was grown under the conditions of freezing temperature gradient of 12$^{\circ}C$/cm and growing rate of 3mm/hr. Also the 6-inch crystal was grown by using thermal stabilization method under freezing temperature gradient of 14$^{\circ}C$/cm and growing rate of 2mm/hr. The dislocation density was characterized for evaluating the quality of crystals. And the optical properties such as transmittance, refractive index and fluorescence were analyzed in order to investigate on the applications of optical components.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.185-188
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• 1996

The doped n-type $Al_{x}Ga_{1-x}Sb$ crystals were grown by the vertical Bridgman method at composition ratio x=0, x=0.1, x=02 respectively. The lattice constants of the $Al_{x}Ga_{1-x}Sb$ crystals were 6.096${\AA}$, 6.097${\AA}$, 6.106${\AA}$ at composition ratio respectively. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x-0 were n≡1 x $10^{17}$$cm^{-3}$, $\rho$≡0.15 ${\Omega}$-cm, ${\mu}$$_{n}$≡500 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x=0.1 were n≡2.96 x $10^{15}$$cm^{-3}$, $\rho$≡103 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K.

• 한국지구과학회지
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• 제18권6호
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• pp.553-558
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• 1997

등축정계의 결정구조를 지니는 무색 투명한 저코니아($Zr_{0.73}Y_{0.27}O_{1.87}$) 결정을 $Y_2O_3$를 안정제로 사용하여 Bridgman-Stockbager법(또는 Skull 용융법)으로 합성하였다. 육성된 결정은 유리광택을 나타내며 동시에 약간의 지방 광택도 띤다. 저코니아 결정은 편광현미경하에서 등방성을 나타내며 이방성의 징후는 발견되지 않는다. 모스 경도는 $8{\sim}8\frac{1}{2}$이고 비중은 5.85이다. 자외선하에서는 약한 백색 형광을 낸다. 단결정법으로 결정한 저코니아의 결정구조는 등축정계이며, 공간군은 $Fm3m({O^5}_h)$이다. 단위포 상수(a)는 $5.1552(5){\AA}$이며, $V=136.99(5){\AA}$, Z=4, R=0.0488이다. 저코니움 원자는 각 모서리에 산소 원자가 자리잡고 있는 육면체의 중심에 위치하고 있으며, 각 산소 원자는 저코니움 원자로 되어 있는 사면체의 중심에 위치하고 있다. 결국 8:4의 배위수가 성립하는 구조를 하고 있다.

• Journal of Radiation Protection and Research
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• 제21권1호
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• pp.1-7
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• 1996

본 논문에서는 bulk형 CdZnTe 감마선 검출기의 제작과 이를 이용한 개인용 선량율계의 제작 및 그 특성에 관하여 기술하였다. 감마선 검출기는 고압 Bridgman법으로 성장된 비저항이 $10^9ohm-cm$이상인 단결정을 사용하였으며 electroless deposition법으로 금전극을 형성시켜 사용하였다. 제작된 CdZnTe 검출기는 $^{109}Cd$의 22.2 keV 감마선과 $^{241}Am$의 59.6 keV 감마선에 대하여 상온에서 각각 4.8keV와 2.2keV의 분해능을 보였다. 또한 이 검출기를 이용하여 개인용 선량율계를 제작하였는데 662keV의 $^{l37}Cs$의 감마선에 대하여 1mR/hr에서 10R/hr의 선율에서 변동율 5%이하의 좋은 직진성을 보였고 온도변화 및 조사선율의 각도분포에 대하여도 좋은 응답 특성을 보였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.