• Journal of Sensor Science and Technology
• /
• v.21 no.4
• /
• pp.293-297
• /
• 2012

CsI:Gd crystal was grown by the Bridgeman method and its scintillation properties were investigated. The wavelength peak of the luminescence spectrum for the crystal excited by X-ray was 419 nm. The range of the spectrum was from 300 nm to 800 nm. The spectrum well matched to the quantum efficiency of a typical bi-alkali photo-multiplier tube(PMT). An energy resolution of 48.2 % was obtained for 662 keV ${\gamma}$-rays of $^{137}Cs$. The three decay times were obtained as a fast(557.4 ns, 42.2 %), intermediate (1.78 ${\mu}s$, 29.7 %) and slow (5.43 ${\mu}s$, 28.1 %) components, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.338-341
• /
• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.4
• /
• pp.47-53
• /
• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.27-31
• /
• 1998

The growth method using multi-crucible set is very useful for mass production of optical crystals such as CaF2, Lif, BaF2 etc. CaF2 crystals of various diameter(42, 54 and 68mm) could be grown by means of multi-crucible set in one running operation and they were investigated to the formation of grain boundary as the cone-angle of crucibles. The qualities of crystal were evaluated by observing grain number and dislocation density. The transmittance was analyzed by using UV-Visible-NIR spectrometer.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.1
• /
• pp.32-43
• /
• 1996

A $CdIn_{2}Te_{4}$ single crystal was grown by modified veritical bridgman method. The $CdIn_{2}Te_{4}$ single crystal was evaluated to be tetragonal by the powder method. The $CdIn_{2}Te_{4}$ single crystal was confirmed to be grown with its c axis along the lengthe of the boule by the Laue reflection method. Hall effect of $CdIn_{2}Te_{4}$ single crystal was estimated by van der pauw method from 293 K to 30 K. Hall data of the sample perpendicular to c axis was $n=8.75{\times}10^{23}electrons/m^{3},\;R_{H}=7.14{\times}10^{-5}m^{3}/C,\;{\sigma}=176.40{\omega}^{-1}m^{-1},\;{$\mu}=3.41{\times}10^{-2}m^{2}/V.s$ and the sample parallel to c axis was $n=8.61{\times}10^{23}electrons/m^{3},\;R_{H}=7.26{\times}10^{-5}m^{3}/C,\;{\sigma}=333.38{\omega}^{-1}m^{-1}\;and\;{$\mu}=2.42{\times}10^{-2}m^{2}/V.s$ for room temperature. The value of Hall coefficient on sample perpendicular or parallel to c axis were positive. There $CdIn_{2}Te_{4}$ single crystal was p-type semiconductor.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.149-156
• /
• 1998

In this work, aiming at improvement of growth processes for the bulk GaAs single crystals, efforts have been made first in investigate thermodynamic properties of the Ga and As system and second to suggest that bulk GaAs crystals could be grown in principle with the single temperature zone only by determining the excess arsenic charge as a function of growth conditions. During crystal growth, this will be evaporized inside the growth chamber to induce the required inner pressure, instead of aesenic vapor pressure in the double temperature zone method, so as to be in equilibrium with the method, growth experiments have been prepared and carried out for dopes and undoped GaAs crystals with the newly built Bridgman system which was designed according to this principle. To compare the results to those of the double temperature zone method, the same numbers of GaAs crystals have been grown with both processes and all of them were characterized in single crystallinity, lattice defects and electrical properties. Especially, the relationship between growth conditions and crystal quality was discussed from the viewpoint of growth peculiarities with this method.

• Journal of Magnetics
• /
• v.15 no.2
• /
• pp.56-60
• /
• 2010

In this study, we investigated the optical, magnetic, and electrical transport properties of $Si_{1-x}Mn_x$ (0.1 < x < 0.9) single crystals grown by the vertical Bridgman method. The alloys with a Mn concentration of up to 64% demonstrated weak ferromagnetic ordering around $T_C=30\;K$. The $Si_{0.25}Mn_{0.75}$ and $Si_{0.18}Mn_{0.82}$ alloys showed weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, as confirmed by magnetization, neutron diffraction, and transport studies.

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.504-510
• /
• 1994

In this work the crystal structure, optical absorption and photoluminescence of Cd$_{4}$GeSe$_{6}$ single srystals grown by the vertical bridgman method are investigated. From the observed results of the PICTS, we proposed on energy band model which contains deep levels between the conduction band and the valence band. The energy band model permit us to explain the mechanism of the radiative recombination for the Cd$_{4}$GeSe$_{6}$ single crystals.als.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.121-122
• /
• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.157-159
• /
• 1998

Sapphire crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molybdenum container, growth atmosphere, temperature gradient and orientation of see on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 90 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were colorless, transparent and could not be observed and macroscopic defects, such as bubbles, cracks, twins and mosaic structure. With the grown crystals, prototypes of sapphire substrate for blue wafers were characterized. As a result, we can get hight quality of sapphire wafers with c-axis, 1.5 inches in diameters and 0.33 mm in thickess.