• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.183-189
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• 2010

In this paper, the trench gate emitter switched thyristor(EST) withl trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The characteristics of the 1700 V forward blocking EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST. we carried out layout, design and process of EST devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.78-88
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• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 1996.04a
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• pp.217-220
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• 1996

This study presents a R&D performance monitoring system (RDMS) that is applicable for managing nuclear program in KAERI. The prime goal of RDMS is to furnish project manager with reliable and accurate information on status of progress, performance and resource allocation, and attain traceability and visibility of project implementation for effective project management. In this study, the work breakdown structure (WBS) as the governing factor for integration of scope, schedule, resource data was derived, and the above parameters were loaded personal computer. A RDMS is comprised of about 12,000 R&D activities of the 16 goverment-led projects. The Primavera software was used to monitor the progress, evaluate the performance and analyze the resource distribution to activities.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• Journal of the Korean Society for Railway
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• v.9 no.4 s.35
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• pp.487-492
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• 2006

This paper presents the Case of Systems Engineering Application for the Railway Total-Safety Project. Key points to consider for project are: 1) Establish the SE Based-Project organization system, 2) Define the SE Activities, 3) Manage technically the SE Based-Project, etc. They were of much help that the Railway Total-Safety Project which were efficiently implemented and managed. As I take it, the Systems Engineering is very reasonable approach for the systematical and technical conduct of a project.

• Journal of Aerospace System Engineering
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• v.2 no.3
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• pp.29-32
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• 2008

The overview of KUH design and development process is presented according to Buede's systems and development "vee" model. The system decomposition and integration activities exemplify KUH specification tree, design maturity and analysis according to design stage(conceptual, preliminary, and detail design), scheduled work breakdown structure, qualification test, ground test, and flight test. This process can be applied to the development of a new aircraft.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.33 no.3
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• pp.93-101
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• 2010

Regarding project management, many organizations have developed and distributed general project management knowledge systems, and application fields use the knowledge systems to apply the process suitable for characteristics of a project. This study suggests project management process models to apply to product development projects and introduces the application cases. This product development project management process model is composed of five top processes of initiation and preparation, planning, implementation management, control, and termination and transfer. The five processes are re-divided into 18 bottom processes. These processes are expressed as input, control, output, and mechanism by using the IDEF0 model. This model is applied to the new car development project of a Korean automobile company and introduces the cases, which shows a project charter, a work breakdown structure, a project schedule, a progress s-curve, a risk register, and a performance report.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.470-471
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• 2008

SVL is installed at underground transmission system to protect cables and insulation joint-box from overvoltages caused by lightning, switching, and line-to-ground fault. Domestic underground power system adopts cross bonding type to reduce the induced voltage at sheath, but single-point bonding is required depending the system installation configuration. SVL can be easily broken by overvoltages induced at joint-box because single-point bonding has uneffective system structure to extract fault current. ANSI/IEEE recommends Parallel Ground Continuity Conductor(PGCC) to prevent SVL breakdown. In this paper, EMTP simulation is performed to analyze effects on SVL under PGCC installation when single-line-to-ground fault occurs. The result shows that PGCC and short single-point bonding distance can reduce overvoltages at SVL.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1961-1962
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• 2008

Hybrid Peer-to-Peer structure is sharing resource in each peer, but various resource that is with go peer indexing and segment that search from attained in server who function is solidified that is not attained in peer itself be. Basis algorithm was based on Ethernet protocol and administration of each peer enabled in center server and peer does as can confirm breakdown existence and nonexistence through communication with center server and the internet through this directly expensive test expense and a lot of test times of existing test method of access method necessary problem effectively improve.