• Title/Summary/Keyword: breakdown structure

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4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop (낮은 순방향 전압 강하를 갖는 4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR))

  • Bae, Dong-woo;kim, Kwang-soo
    • Journal of IKEEE
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    • v.21 no.1
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    • pp.73-76
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    • 2017
  • SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

Effect of Microstructure on Electrical Properties of Thin Film Alumina Capacitor with Metal Electrode (금속 전극 알루미나 박막 캐패시터의 전기적 특성에 미치는 미세구조의 영향)

  • Jeong, Myung-Sun;Ju, Byeong-Kwon;Oh, Young-Jei;Lee, Jeon-Kook
    • Korean Journal of Materials Research
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    • v.21 no.6
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    • pp.309-313
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    • 2011
  • The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

Physicochemical Properties of the Durian Seed Starch (Durian 종자 전분의 이화학적 특성)

  • Lee, Seong-Gap;Kim, Hyeong-Su;Son, Jong-Youn
    • Korean Journal of Food Science and Technology
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    • v.31 no.6
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    • pp.1410-1414
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    • 1999
  • The granular size and shape of durian seed starch were $2.0-10.0\;{\mu}m$ and oval and polygonal. Amylose contents of durian seed, corn, sweet potato and potato starch were 28.3%, 27.5%, 20.3% and 21.7%, respectively. Blue value of durian seed (0.370) higher than that of corn (0.368), sweet potato (0.332), and potato starch (0.338). Alkali numbers of durian seed, corn, sweet potato and potato starch were 7.39, 9.02, 7.08 and 5.43, respectively. Swelling power of durian seed starch was similar to that of sweet potato starch. X-ray diffraction patterns of durian seed starch showed an A-type crystalline structure. According to pasting properties by Rapid Visco-Analyzer, the gelatinization temperature of durian seed starch $(76.6^{circ}C)$ was higher than that of corn $(73.0^{circ}C)$, sweet potato $(72.3^{circ}C)$ and potato starch $(70.2^{circ}C)$. The breakdown of durian seed starch were lower than that of corn, sweet potato and potato starch.

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Degradation Characteristics of Wood Cellulose by Ruminal Cellulolytic Anaerobic Bacterium Ruminococcus albus F-40 (혐기성 세균 Ruminococcus albus F-40에 의한 목재 cellulose의 분해특성)

  • Kim, Yoon-Soo;Wi, Seung-Gon;Myung, Kyu-Ho
    • Journal of the Korean Wood Science and Technology
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    • v.25 no.3
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    • pp.83-95
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    • 1997
  • The degradation mode of lignocellulose by anaerobic ruminal cellulolytic bacterium Ruminococcus albus F-40 was investigated. Birchwood holocellulose and filter paper were incubated as the sole carbohydrate sources with using the Hungate techniques. After 2 or 4 days of incubation, samples were employed for chemical and electron microscopic evaluations. The degradation rate of cellulosic substrates and the adhesion rate of bacteria to the substrates increased proportionally with the decrease of relative crystallinity of cellulose, indicating the preferential breakdown of amorphous cellulose, by this bacterium. X-ray diffraction analyses and polarized light microscopy showed, however, that crystalline cellulose was also degraded by R. albus. FT-IR spectra indicated that not only cellulose but hemicellulose was also degraded by this bacterium. Electron microscopic investigations showed the protuberant structures on the surface of R. albus. These structures were much more significant when bacterial cells were grown in the media containing insoluble substrates, such as cellulose, indicating clearly that bacterial protuberant structures were induced by the substrates. Protuberant structures extended from the bacterial cells adhered tightly to the substrates and numerous vesicles covered the surface of cellulosic substrates affected. Cellulosome-like structures were distributed on the cellulose matrix. Electron microscopic works showed that diverse surface organells of R. albus were involved in the degradation of cellulosic materials. SEM examinations showed the breakdown of cellulose by R. albus was proceeded by severeal routes : short fiber formation, defibrillation and destrafication of cellulose microfibril.

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Characterization of the Transglycosylation Reaction of 4-α-Glucanotransferase (MalQ) and Its Role in Glycogen Breakdown in Escherichia coli

  • Nguyen, Dang Hai Dang;Park, Sung-Hoon;Tran, Phuong Lan;Kim, Jung-Wan;Le, Quang Tri;Boos, Winfried;Park, Jong-Tae
    • Journal of Microbiology and Biotechnology
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    • v.29 no.3
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    • pp.357-366
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    • 2019
  • We first confirmed the involvement of MalQ (4-${\alpha}$-glucanotransferase) in Escherichia coli glycogen breakdown by both in vitro and in vivo assays. In vivo tests of the knock-out mutant, ${\Delta}malQ$, showed that glycogen slowly decreased after the stationary phase compared to the wild-type strain, indicating the involvement of MalQ in glycogen degradation. In vitro assays incubated glycogen-mimic substrate, branched cyclodextrin (maltotetraosyl-${\beta}$-CD: G4-${\beta}$-CD) and glycogen phosphorylase (GlgP)-limit dextrin with a set of variable combinations of E. coli enzymes, including GlgX (debranching enzyme), MalP (maltodextrin phosphorylase), GlgP and MalQ. In the absence of GlgP, the reaction of MalP, GlgX and MalQ on substrates produced glucose-1-P (glc-1-P) 3-fold faster than without MalQ. The results revealed that MalQ led to disproportionate G4 released from GlgP-limit dextrin to another acceptor, G4, which is phosphorylated by MalP. In contrast, in the absence of MalP, the reaction of GlgX, GlgP and MalQ resulted in a 1.6-fold increased production of glc-1-P than without MalQ. The result indicated that the G4-branch chains of GlgP-limit dextrin are released by GlgX hydrolysis, and then MalQ transfers the resultant G4 either to another branch chain or another G4 that can immediately be phosphorylated into glc-1-P by GlgP. Thus, we propose a model of two possible MalQ-involved pathways in glycogen degradation. The operon structure of MalP-defecting enterobacteria strongly supports the involvement of MalQ and GlgP as alternative pathways in glycogen degradation.

A Study on the Electrical Characteristics according to Growth of Trench SiO2 Inside Super Junction IGBT Pillar (Super Junction IGBT 필러 내부 Trench SiO2성장에 따른 전기적 특성에 관한 연구)

  • Lee, Geon Hee;Ahn, Byoung Sup;Kang, Ey Goo
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.344-349
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    • 2021
  • This paper proposes a structure in which Trench SiO2 is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO2 after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.

3단형 위성발사체 작업분류체계 개발

  • Lee, Joon-Ho;Joh, Mi-Ok;Seo, Yun-Kyung
    • Aerospace Engineering and Technology
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    • v.4 no.1
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    • pp.122-128
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    • 2005
  • A work breakdown structure of 3-staged launch vehicle has been developed during the preliminary design step of KSLV-I program. In the present paper, the background, the detailed contents, and the total structures of WBS have been studied. The management plan for WBS has been also provided.

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A Proposal of Modeling Guide of the Unit Space-based Preliminary Cost Estimation in Urban Renewal Mix-Used Development - Case Study on ○○ Transfer Station Complex - (복합용도 개발 도시재생 사업에서의 단위 공간 기반 개산견적 모델링 가이드 제안 - ○○시 ○○역 복합환승센터 사례를 중심으로 -)

  • Kang, Shin-Yeop;Ahn, Jae-Hong;Kim, Ju-Hyung
    • Journal of KIBIM
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    • v.3 no.1
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    • pp.11-20
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    • 2013
  • Mix-used development in urban renewal project is done to effectively utilize the limited downtown. Generally unlike a single project, It features placing a large number of different facilities(residential, commercial, business, cultural, etc.) which is each other organically linked. The purpose of this study is to suggest the method of modeling guide for 3D preliminary cost estimation considering visual and intuitive judgement of space in mix-used development Urban Renewal project. In this research, introducing SME(Standard Module and Element) breakdown structure, FID(Finish Identity) for estimating building space unit-based quantity take off was implemented. It could narrow the discrepancy of opinion between the stakeholders with more accurate cost-estimates, comparing to the traditional methods.

Discrete Event Simulation for the Initial Capacity Estimation of Shipyard Based on the Master Production Schedule (대일정 생산 계획에 따른 조선소 생산 용량의 초기 평가를 위한 이산사건 시뮬레이션)

  • Kim, Kwang-Sik;Hwang, Ho-Jin;Lee, Jang-Hyun
    • Korean Journal of Computational Design and Engineering
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    • v.17 no.2
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    • pp.111-122
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    • 2012
  • Capacity planning plays an important role not only for master production plan but also for facility or layout design in shipbuilding. Product work breakdown structure, attributes of production resources, and production method or process data are associated in order to make the discrete event simulation model of shipyard layout plan. The production amount of each process and the process time is assumed to be stochastic. Based on the stochastic discrete event simulation model, the production capacity of each facility in shipyard is estimated. The stochastic model of product arrival time, process time and transferring time is introduced for each process. Also, the production capacity is estimated for the assumed master production schedule.

A Study on Carrier Injection and Trapping by the High Field for MAS (Al-Al2O3-Si(n)) Structure ($Al-Al_2O_3-Si$(N형)의 MAS 구조에 있어서 고전계에 의한 Carrier 주인과 트?에 관한 연구)

  • 이영희;박성희
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.35 no.10
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    • pp.465-472
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    • 1986
  • The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

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