• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.63-66
• /
• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.6
• /
• pp.1460-1464
• /
• 2010

In the paper, the breakdown voltage of Trench D-MOSFET have been analyzed by using MircoTec. The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. A Trench MOSFET is the most preferred power device for high voltage power applications. The oxide thickness and doping concentration in Trench MOSFET determines breakdown voltage and extensively influences on high voltage. We have investigated the breakdown voltage characteristics according to variation of doping concentration from $10^{15}cm^{-3}$ to $10^{17}cm^{-3}$ in this study. We have also investigated the breakdown voltage characteristics according to variation of oxide thickness and junction depth.

• Proceedings of the KIPE Conference
• /
• 1998.10a
• /
• pp.847-850
• /
• 1998

This paper proposes a new scheme of FLR for improving corner breakdown voltage. The major difference from the conventional FLR is to build extra rings and floating field plates in the corner region. In this structure the additional field plate and ring have reduced th electric field at the junction in the corner region. Thus it improves the breakdown characteristics which are critical for obtaining high breakdown voltage.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.8
• /
• pp.1719-1724
• /
• 2004

In this paper, we have proposed a new structure of LDMOST, which has been expected as a next generation RF power device, to improve the BV(Breakdown Voltage) characteristics. The proposed structure, named external field ring, is formed around a drift region by the three dimensional structure. The external field ring relieves the electric field in the drift region and improves the BV characteristics. By the three dimensional TCAD simulations, it was found that the BV of LDMOST was increased by the increase of the junction depth and doping concentration of the external field ring. Therefore, the BV characteristics of the LDMOST can be remarkably improved by addition of external field ring using an existing p+ sinker process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.4
• /
• pp.214-217
• /
• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.1
• /
• pp.69-74
• /
• 2018

With the increasing development of industrial society and the availability of high quality electrical energy, the simplification of operation and maintenance procedures is required, in order to ensure the reliability and safety of electrical systems. In this paper, the dielectric breakdown characteristics of $N_2-O_2$ mixed gas solid insulation, which is used as an alternative to SF6 in various electric power facilities, are verified. When the gas mixture has a composition ratio similar to that of the atmosphere, the dielectric breakdown characteristics are relatively stabilized. It was confirmed that the breakdown voltage of the gas in the electrode near an equal electric field increased with increasing pressure according to Paschen's rule. The breakdown voltage of the surface increased linearly with increasing pressure, and the difference was caused by the mixing ratio of $O_2$ gas. This change in the surface insulation breakdown voltage was caused by the influence of the electrically negative $O_2$ gas and the intermolecular collision distance. In this study, the influence of the intermolecular impact distance was larger (than that in the absence of the electrically negative $O_2$ gas). The breakdown voltage relation applicable to Teflon according to the surface insulation characteristics was calculated. The characteristics of the surface insulation properties of Teflon, which is used as a solid insulation material, were derived as a function of pressure. It is thought that these results can be used as the basic data for the insulation design of electric power facilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.306-309
• /
• 1995

This paper describes the dielectric characteristics of $SF_{6}$ gas in a non-uniform electric field under overvoltages. The breakdown voltage-time characteristics and the breakdown voltage-gas pressure characteristics are measured within a gas pressure range extending from 0.1 to 0.5 [Mpa] for the plane electrode system with a needle-shaped protrusion. The curvature radius of the needle protrusion is 0.5[mm]. Also, the growth process of the predischarge are simultaneously observed. As a result, it is found that the breakdown mechanism and predischarge phenomena are closely associated with the polarity and waveforms of the testing voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.212-213
• /
• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.5
• /
• pp.420-425
• /
• 2000

Crosslinked polyethlyene/silane crosslinked polyethylene(XLPE/SXLPE) blends were prepared by a twin screw extruder and their water tree growing electrical breakdown and crossinking characteristics were investigated. The water tree characteristics of XLPE were improved by the addition of SXLPE when samples were crosslinked only by the thermorolysis of DCP (dicumyl peroxide). However steam curing process was not good for water tree characteristics. It was also found that the rate of water tree growing of XLPE/SXLPE blend increased when the content of SXLPE was 50%. AC breadown strength slightly increaed by the addition of SXLPE to XLPE when samples were crosslinked only by the thermorolysis of DCP. It was also found that the degree of crosslinking of XLPE/SXLPE blends were higher than that of XLPE in the case of the content without steam crosslinking process.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.284-286
• /
• 1994

This paper describes the dielectric characteristics of $SF_6$ gas in non-uniform electric filed under lightning under lightning impulse and oscillating impulse voltages. The breakdown voltage-time characteristics and the breakdown voltage-pressure characteristics are measured over a pressure range extending from 0.1 to 0.5 [MPa] fur the coaxial electrode with a needle protrusion. The curvature radius of needle protrusion is 0.3[mm]. Also, the growth of the predischarge is simultaneously observed. As a result the polarity effect is pronounced, and the breakdowns voltage under the oscillating impulse voltage are higher than those under the lightning impulse voltage. It is found that the breakdown mechanism md predischarge phenomena ate closely related with the polarity and waveforms of the testing voltage.