• Title/Summary/Keyword: breakdown strength

Search Result 523, Processing Time 0.034 seconds

Study on Characteristics of Porcelain Insulators for High Strength with Alumina Composition (알루미나 조성에 따른 고강도 자기 애자의 특성 연구)

  • 조한구;한세원;박기호;최연규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.3
    • /
    • pp.353-359
    • /
    • 2004
  • In this study. porcelain insulator samples which have a different alumina composition were manufactured in order to test electrical and mechanical properties and make an analysis of the propagation phenomena of micro cracks on porcelain body. From XRD quantitative analysis the crystalline phases were different with alumina composition, sample C and D which have about l7wt% Corundum phase without the Cristobalite phase shows better electrical and mechanical properties than sample A and B which have the Cristobalite phase. In dielectrics test on porcelain samples with below l7wt% alumina composition, it was found that the amount of glass phase(SiO$_2$) have an main effect to decrease the dielectric loss(tan$\delta$), and the dielectric breakdown voltage of aluminous porcelain insulators was largely affected by its relative density. As a micro tracks analysis, HRB were measured, then the intensity of HRB increased with the amount of alumina composition. On the other hand, the propagation behaviors of cracks was fairly influenced by the distribution of pores.

Preparation and Electrical Properties of Lead Zirconate Titanate Thick Films Fabricated by Screen-Printing Method (스크린 프린팅으로 제작된 $Pb(Zr,\;Ti)O_3$ 후막의 제작과 전기적 특성)

  • Park, Sang-Man;Lee, Sung-Gap
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.55 no.9
    • /
    • pp.429-433
    • /
    • 2006
  • PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

Water Tree Characteristics of Crosslinked Polythylene (가교 폴리에틸렌의 수트리 특성)

  • Nam, Jin-Ho;Kim, Woong;Kim, Hyeon-Seok;Kim, Joon-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.295-295
    • /
    • 2008
  • Water tree experiments were done for several types of cross-linked polyethylenes. Test method is followed by ASTM D6097. Polyethylene is divided for four subgroup. First One is chemically cross-linked general XLPE, and second one is chemically cross-linked tree-retardant XLPE, and the third one is silane cross-linked polyethylene made by monosil process, and the last one is silane cross-linked polythylene made by copolymer. Tree retardant XLPE shows the shortest water tree length. Cahemcally cross-linked general XLPE shows the longest water tree length. Silane cross-linked polyethylene by copolymer is similar to tree retardant XLPE and similar breakdown strength. So silane cross-linked XLPE by copolymer could be used for the the medium voltage cable which should have tree retardant characteristics.

  • PDF

Electrical Conductivity of Dielectric on WEDM Characteristics (WEDM 가공특성에 대한 방전액의 전기전도율의 영향)

  • Kim, Chang-Ho;Yeo, Hong-Tae
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.27 no.10
    • /
    • pp.1800-1808
    • /
    • 2003
  • This work deals with the electrical conductivity of dielectric on output parameters such as metal removal rate and surface roughness value of a carbon steel(SM25C) and sintered carbides cut by wire-electrical discharge machining(W-EDM). Dielectric has several functions like insulation, ionization, cooling, the removal of waste metal particles. The presence of minute particles(gap debris) in spark gap contaminates and lowers the breakdown strength of dielectric. And it is considered that too much debris in spark gap is generally believed to be the cause of arcing. Experimental results show that increases of cobalt amount in carbides affects the metal removal rate and worsens the surface quality as a greater quantity of solidified metal deposits on the eroded surface. Lower electrical conductivity of the dielectric results in a lower metal removal rate because the gap between wire electrode and workpiece reduced. Especially, the surface characteristics of rough-cut workpiece and wire electrode were analyzed too. Debris were analyzed also through scanning electron microscopy(SEM) and surface roughness tester. Micro cracks and some of electrode material are found on the workpiece surface by energy dispersive spectrometer(EDS).

Study of The SiC CMOS Gate Oxide (SiC CMOS 게이트 산화막에 관한 연구)

  • 최재승;이원선;신동현;김영석;이형규;박근형
    • Proceedings of the IEEK Conference
    • /
    • 2001.06b
    • /
    • pp.29-32
    • /
    • 2001
  • In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

  • PDF

Ionization and Attachment Coefficients in CF4, CH4, Ar Mixtures Gas (CF4, CH4, Ar 혼합기체의 전리와 부착계수)

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.61 no.1
    • /
    • pp.13-17
    • /
    • 2012
  • Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

Machining Characteristics of WEDM due to Electrical Conductivity of Dielectric (방전액의 전도율의 변화에 따른 와이어방전가공의 가공특성)

  • Kim, Chang-Ho;Kang, Jae-Won
    • Transactions of the Korean Society of Machine Tool Engineers
    • /
    • v.15 no.6
    • /
    • pp.15-21
    • /
    • 2006
  • This work deals with the electrical conductivity of dielectric on output parameters such as metal removal rate and surface roughness value of a carbon steel(SM25C) and sintered carbides cut by wire electrical discharge machining (WEDM). Dielectric has several functions like insulation, ionization, cooling, the removal of waste metal particles. The presence of minute metal particles(debris) in spark gap contaminates and lowers the breakdown strength of dielectric. And it is considered that too much debris in spark gap is generally believed to be the cause of arcing. Experimental results show that increases of cobalt amount in carbides affects the metal removal rate and worsens the surface quality as a greater quantity of solidified metal deposits on the eroded surface. Lower electrical conductivity of the dielectric results in a lower metal removal rate because the gap between wire electrode and workpiece reduced. Especially, the surface characteristics of rough-cut workpiece and wire electrode were analyzed too. Debris were analyzed also through scanning electron microscopy(SEM) and surface roughness tester. Micro cracks and some of electrode material are found on the workpiece surface by energy dispersive spectrometer(EDS).

Evaluation Method I of the Small Current Breaking Performance for SF(sub)6-Blown High-Voltage Gas Circuit Breakers (초고압 $SF_6$ 가스차단기의 소전류 차단성능 해석기술 I)

  • 송기동;이병운;박경엽;박정후
    • The Transactions of the Korean Institute of Electrical Engineers B
    • /
    • v.50 no.7
    • /
    • pp.331-337
    • /
    • 2001
  • With the increasing reliability of analysis schemes and the dramatically increased calculating speed, the computer simulation has become and indispensable process to predict the interruption capacity of circuit breakers. Generally, circuit breakers have to possess both the small current and large current interruption abilities and the circuit breaker designers need to evaluate its capacities to save the time and the expense. The analysis of small current and the large current interruption performances have been considered separately because the phenomena occurring in a interrupter are quite different. To analyze the dielectric recovery after large current interruption many physical phenomena such as heat transfer, convection and arc radiation, the nozzle ablation, the ionization of high temperature SF(sub)6 gas, the electric and themagnetic forces and so forth mush be considered. However, in the analysis of small current interruption performance only the cold gas flow analysis needs to be carried out because the capacitive current is to small that the influence from the current can be neglected. In this paper, an empirical equation which is obtained from a series of tests to estimate the dielectric recovery strength has been applied to a real circuit breaker. The results of analysis have been compared with the test results and the reliability has been investigated.

  • PDF

Plastic deformation characteristic of titanium alloy sheet (Ti-6Al-4V) at elevated temperature (티타늄 합금판재(Ti-6Al-4V)의 고온 소성면형특성(1))

  • Park, J.G.;Kim, J.H.;Park, N.K.;Kim, Y.S.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2009.05a
    • /
    • pp.158-163
    • /
    • 2009
  • Titanium alloy sheets have excellent specific strength and corrosion resistance as well as good performance at high temperature. Recently, titanium alloys are widely employed not only aerospace parts but also bio prothesis and motorcycle. However, due to the low formability and large spring back at room temperature, titanium alloy sheets were usually formed by slow forming or hot forming with heating die and specimen. In the sheet metal forming area, FE simulation technique to optimize forming process is widely used. To achieve high accuracy FE simulation results, Identification of material properties and deformation characteristic such as yield function are very important. In this study, uniaxial tensile and biaxial tensile test of Ti-6Al-4V alloy sheet with thickness of 1.0mm were performed at elevated temperature of 873k. Biaxial tensile tests with cruciform specimen were performed until the specimen was breakdown to characterize the yield locus of Ti-6Al-4V alloy sheet. The experimental results for yield locus are compared with the theoretical predictions based on Von Mises, Hill, Logan-Hosford, and Balat's model. Among these Logan-Hosford's yield criterion well predicts the experimental results.

  • PDF

A Study on the Growth of Tantalum Oxide Films with Low Temperature by ICBE Technique (ICBE 기법에 의한 저온 탄탈륨 산화막의 형성에 관한 연구)

  • Kang, Ho-Cheol;Hwang, Sang-Jun;Bae, Won-Il;Sung, Man-Young;Rhie, Dong-Hee;Park, Sung-Hee
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1463-1465
    • /
    • 1994
  • The electrical characteristics of $Al/Ta_2O_5/Si$ metal-oxide-semiconductor (MOS) capacitors were studied. $Ta_2O_5$ films on p-type silicon had been prepared by ionized cluster beam epitaxy technique (ICBE). This $Ta_2O_5$ films have low leakage current, high breakdown strength and low flat band shift. In this research, a single crystalline cpitaxial film of $Ta_2O_5$ has been grown on p-Si wafer using an ICBE technique. The native oxide layer ($SiO_2$) on the silicon substrate was removed below $500^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high temperature deposition. $Ta_2O_5$ films formed by ICBE technique can be received considerable attention for applications to coupling capacitors, gate dielectrics in MOS devices, and memory storage capacitor insulator because of their high dielectric constants above 20 and low temperature process.

  • PDF