• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.67-73
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• 2012

Spherical lithium manganese oxide spinel, $LiMn_{2-x}M_xO_4$ (M = Al, Mg, B) prepared by wet-milling, spray-drying, and sintering process has been investigated as a cathode material for lithium ion batteries. As-prepared powders exhibit various surface morphologies and internal density in terms of boron (B) doping level. It is found that the dopant B drives the growth of the primary particle and minimizes the surface area of the powder. As a result, the dopant enhances the internal density of the particles. Electrochemical tests demonstrated that the capacity of the synthesized material at 5 C could be maintained up to 90% of that at 0.2 C. The cycle performance of the material showed that the initial capacity was retained up to 80% even after 500 cycles under the high temperature of $60^{\circ}C$.

• Transactions of Materials Processing
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• v.17 no.4
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• pp.240-248
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• 2008

The effect of alloying elements(Mn, S, Mo, B) on the high temperature deformation behavior of Fe-29%Ni-17%Co (Kovar) alloy were investigated. And the effect of high temperature oxidation on the hot ductility was also studied. The hot ductility of Kovar alloy was drastically increased with the addition of Mn and lowering of S content. It has been found that the brittle intergranular fracture at high temperature cracking is closely associated with the FeS sulfide along the grain boundary. When Mn was added, the type of sulfide was changed to MnS from FeS and ductile intergranular fracture and transgranular fracture were promoted. The formation of oxide layer was found to have minimized the hot ductility of the Kovar alloy significantly. Grain boundary micro-cracks in the internal oxide region were noted following deformation due to high temperature, one of which acting as a notch that caused the poor hot workability of the oxidized specimen. The addition of Mo to the Kovar alloy could also retard the decrease in the hot ductility of the oxidized specimen through the prevention of notching due to internal oxidation. Hot ductility was remarkably improved by the addition of Boron. The improvement of hot ductility results from the grain boundary migration mainly due to the dynamic recrystallization at lower temperature range ($900{\sim}1000^{\circ}C$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.332-340
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• 2023

Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Journal of Powder Materials
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• v.5 no.3
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• pp.199-209
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• 1998

A new low melting inorganic binder, monoclinic $HBO_2$, has been developed for Selective Laser Sintering (SLS) of alumina powder by dehydration process of boron oxide powder in a vacuum oven at $120^{\circ}C$. It led to better green SLS parts and higher bend strength far green and fired parts compared to other inorganic binders such as aluminum and ammmonium phosphate. This appeared to be due to its low viscosity and better wettability of the alumina particle surface. A low density single phase ceramic, aluminum borate ($Al_{18}B_4O_{33}$), and multiphase ceramic composites, $A_{12}O_3-A_{14}B_2O_9$, were successfully developed by laser processing of alumina-monoclinic $HBO_2$ powder blends followed by post-thermal processing; both $Al_{18}B_4O_{33}$ and $A_{14}B_2O_9$ have whisker-like grains. The physical and mechanical properties of these SLS-processed ceramic parts were correlated to the materials and processing parameters. Further densification of the $A_{12}O_3-A_{14}B_2O_9$ ceramic composites was carried out by infiltration of colloidal silica, and chromic acid into these porous SLS parts followed by heat-treatment at high temperature ($1600^{\circ}C$). The densities obtained after infiltration and subsequent firing were between 75 and 80% of the theoretical densities. The bend strengths are between 15 and 33 MPa.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.121-127
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• 2017

Gadolinium tetraboride ($GdB_4$) was synthesized by reduction of $Gd_2O_3$ using boron carbide in presence of carbon. Effect of temperature on product quality was investigated. Pure $GdB_4$ powder was obtained in vacuum at $1500^{\circ}C$. Pressureless sintering experiments revealed that sintering takes place only above $1600^{\circ}C$. A maximum density of 77.1% of the theoretical value was obtained at $1800^{\circ}C$ by pressureless sintering. Hot pressing resulted in 95.5% of theoretical density at the lower temperature of $1700^{\circ}C$ under 35 MPa pressure. Hardness and fracture toughness of dense $GdB_4$ were measured and found to be 21.4 GPa and $2.3MPa{\cdot}m^{1/2}$, respectively. After exposure to air at $900^{\circ}C$, the formation of a porous and non-protective oxide layer was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1000-1004
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• 2006

In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2387-2393
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• 2020

In this study, a gradient material for shielding neutrons and gamma rays was developed, which consists of epoxy resin, boron carbide (B₄C), lead (Pb) and a little graphene oxide. It aims light weight and compact, which will be applied on the transportable nuclear reactor. The material is made up of sixteen layers, and the thickness and components of each layer were designed by genetic algorithm (GA) combined with Monte Carlo N Particle Transport (MCNP). In the experiment, the viscosities of the epoxy at different temperatures were tested, and the settlement regularity of Pb particles and B₄C particles in the epoxy was simulated by matlab software. The material was manufactured at 25 ℃, the Pb C and O elements of which were also tested, and the result was compared with the outcome of the simulation. Finally, the material's shielding performance was simulated by MCNP and compared with the uniformity material's. The result shows that the shielding performance of gradient material is more effective than that of the uniformity material, and the difference is most noticeable when the materials are 30 cm thick.