• Journal of Welding and Joining
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• 제13권3호
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• pp.89-95
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• 1995

Effect of boron on corrosion resistance of Type 304 stainless steel has been studied. Boron tends to segregate at the grain boundaries during cooling after solution treatment, and so boron treated steel usually exhibits a ditch structure under the 10% oxalic acid test. However, it was found that the addition of 25 ppm boron in Type 304 steel has no effect on the general and pitting corrosion resistance while it has a little effect on the intergranular corrosion resistance.

• 대한방사성의약품학회지
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• 제8권1호
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• pp.17-23
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• 2022

Boron neutron capture therapy is a precision treatment technology that selectively destroys only tumor cells by irradiating thermal neutrons after accumulating boron drugs in tumor cells. Brain tumor is difficult to diagnose and treat due to the low permeability and targeting of drugs caused by the blood-brain-barrier. Crossing the BBB is essential for drug delivery to the brain. In this study, we designed and synthesized a novel compound incorporating benzothiazole to develop a boron drug with high BBB permeability and selectivity for brain tumor cells. In addition, their potential as a BNCT drugs was evaluated.

• 분석과학
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• 제5권1호
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• pp.127-134
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• 1992

본 연구에서는 순수한 W에 B의 첨가량을 달리하여 플라즈마 아크 용해한 후, B가 용해잉고트와 재결정 후의 미세조직에 미치는 영향에 대하여 조직관찰, 결정립도 측정, 경도시험, AES 및 XRD 분석을 통하여 조사하였다. 조직관찰 및 결정립도 측정결과, B가 W의 고용한도 내의 조성으로 첨가되었을 때는 B의 첨가량에 따라 결정립이 급격히 감소하여 결정립미세화 효과를 나타내었다. 고용한도 이상의 조성으로 B가 첨가되었을 경우에는 B가 고용된 초정 W과 W-$W_2B$의 공정조직을 가진 2개의 상으로 이루어진 것이 관찰되었으며 AES 및 XRD 분석에 의해 확인되었다. B의 첨가량의 증가에 따라 재결정온도가 상승하였고 재결정립도가 미세화되는 것을 알 수 있었다.

• Preventive Nutrition and Food Science
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• 제10권4호
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• pp.353-356
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• 2005

It has been recently reported that boron affects bone metabolism in humans and animals. In this study we examined whether boron affects the proliferation on various cell types, MG-63, HOS, Raw 264.7 and SK-N-SH. When treated with different concentrations of boron $(1,\;10,\;100{\mu}M)$ for 24 and 48 hr, the proliferation of MG-63 cells was enhanced at $10{\mu}M\;(p<0.05)$, for 24 hr. In HOS cells, boron had no effect on cell proliferation at 24 or 48 hr. In addition, treatment of pre-osteoclastic cells (Raw 264.7) with 1, 10, $100{\mu}M$ boron resulted in no effect on cell proliferation. Proliferation of neuronal cells (SK-N-SH) was enhanced by boron in a concentration dependent manner at low concentrations (0.1, 0.5, $1{\mu}M$). Besides proliferation activity, boron has an effect on the enhancement of NO production in SK-N-SH cells in a concentration-dependent manner. These studies showed that boron enhances proliferation of osteoblastic cells (especially MG-63), depending upon the concentration of boron. These results also provide further evidence of the positive effects of boron in neuronal disease.

• Corrosion Science and Technology
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• 제19권1호
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• pp.1-7
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• 2020

Chalk River Unidentified Deposits (CRUDs) were collected from the Korean pressurized water reactor (PWR) plant (A, B, and C) where the axial offset anomaly (AOA) occurred. AOA, also known as a CRUD-induced power shift, is one of the key issues in maintaining stable PWR plant operations. CRUDs were sampled from spent nuclear fuel rods and analyzed using an electron probe micro-analyzer (EPMA). This paper describes the characteristics of boron-deposits from the CRUDs sampled from twice-burnt assemblies from the Korean PWR. The primary coolant of a PWR contains boron and lithium. It is known that boron deposition occurs in a thick CRUD layer under substantial sub-cooled nucleate boiling (SNB). The results of this study are summarized as follows. Boron was not found at the locations where the existence was confirmed in simulated CRUDs, in other words, the cladding and CRUD boundaries. Nevertheless, we clearly observed the presence of boron and confirmed that boron existed as a lump in crystalline form. In addition, the study confirmed that CRUD existed in a crystal form with a unique size of about 10 ㎛.

• 대한금속재료학회지
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• 제56권12호
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• pp.915-920
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• 2018

With the development of modern microelectronics technologies, the power density of electronic devices is rapidly increasing, due to the miniaturization or integration of device elements which operate at high frequency, high power conditions. Resulting thermal problems are known to cause power leakage, device failure and deteriorated performance. To relieve heat accumulation at the interface between chips and heat sinks, thermal interface materials (TIMs) must provide efficient heat transport in the through-plane direction. We report on the enhanced thermal conduction of $Al_2O_3-based$ polymer composites, fabricated by the surface wetting and texturing of thermally conductive hexagonal boron nitride(h-BN) nanoplatelets with large anisotropy in morphology and physical properties. The thermally conductive polymer composites were prepared with hybrid fillers of $Al_2O_3$ macro beads and surface modified h-BN nanoplatelets. Hexagonal boron nitride (h-BN) has high thermal conductivity and is one of the most suitable materials for thermally conductive polymer composites, which protect electronic devices by efficient heat dissipation. In this study, we synthesized hexagonal boron nitride nanoparticles by the pyrolysis of cost effective precursors, boric acid and melamine. Through pyrolysis at $900^{\circ}C$ and subsequent annealing at $1500^{\circ}C$, hexagonal boron nitride nanoparticles with diameters of ca. 50nm were synthesized. We demonstrate that the addition of a small amount of calcium fluoride ($CaF_2$) during the preparation of the melamine borate adduct significantly enhanced the crystallinity of the h-BN and assisted the growth of nanoplatelets up to 100nm in diameters. The addition of a small amount of h-BN enhanced the thermal conductivity of the $Al_2O_3-based$ polymer composites, from 1.45W/mK to 2.33 W/mK.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.7-7
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• 2008

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2227-2232
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• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• 대한기계학회논문집B
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• 제36권7호
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• pp.731-736
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• 2012

열플라즈마 시스템을 이용하여 붕소 함유 나노입자를 제조하기 위한 새로운 방법이 시도되었다. $BCl_3$ 와 $CH_4$ 전구체 기체를 열플라즈마 영역으로 분사하여 고온에서 분해시킨 후, 기체상 응핵 및 성장 과정을 통하여 붕소 또는 붕소 카바이드 입자를 제조하였다. X 선 광분자 분석법을 이용하여 입자 표면의 화학적 결합 상태 및 카바이드와 관련된 B-C 결합 구조 내의 붕소와 탄소의 원자 비율을 측정 및 분석하였다. 또한 나노입자 형상 및 크기 분석을 위해 주사식 투과현미경과 전자에너지손실분광법이 이용되었다. 제조된 나노입자는 30-70 nm 내의 크기 분포를 갖고 있으며, $BCl_3$ 와 $CH_4$ 전구체 기체가 각각 20 sccm, 25 sccm 사용되었을 때 B-C 결합 구조 내의 붕소와 탄소의 비는 2.13 이었다.