• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Journal of the Korea Concrete Institute
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• v.14 no.2
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• pp.231-238
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• 2002

Dry shrinkage md temperature change cause to develope concrete bridge decks on main girders have initial unidirectional cracks in longitudinal or transverse direction. As they receive traffic loads, the crack gradually propagate in different directions depending on the concrete dimension and reinforcement ratio. Since existing equations that predict crack width are mostly based on the one directional bond-slip theory, it is difficult to determine the actual crack width of a bridge deck with varying the spacing of rebar or strengthening material and to estimate the improvement rate in serviceability of the strengthened bridge deck. In this study, crack propagation mechanism is identified based on the test results and a new crack prediction equation is proposed for evaluation of serviceability. Although more accurate results are derived using the proposed equation, the extent of error is increased as the strain of the rebar or the strengthening material increases after the yielding of rebar Therefore, further research is required to better predict the crack width after the rebar yields under fatigue loading condition.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.72-78
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• 1998

An optical modulator Ti:LiNbO$_3$optical waveguide and CPW electrode structure were fabricated. The optical modulator was packaged using components such as ferrules, dirmy LN block and glass, vibration and shock absorbption pad, and alumina feeder through processings of pigtailing. Au wire bonding, epoxing, SMA connecting, sealing. The electrical and optical characteristics were measured after packaging. The electrical properties of S$_{21}$ and S$_{11}$ were obtained as 9.8 GHz at -3 dB and -8.9dB at 14.4GHz, respectively. Optical waveguide prepared met requirements for a single mode at a 1550nm wavelength range. Insertion loss was 4.3dB at room temperature after packaging, and was varied 4.3~6.4dB at various temperatures, 5~45$^{\circ}C$. E-O bandwidth measurement showed 3dB optical response at 7.8GHz, which means that it is applicable for 10Gbps optical communicationon

• Journal of the Korean Chemical Society
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• v.21 no.4
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• pp.246-255
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• 1977

The adsorption of methylmethacylate on layer silicates containing various interlayer cations has been studied by means of infrared spectroscopy and X-Ray. Several characteristic carbonyl bands of adsorbed methylmethacrylate appeared differently at the region of 1723∼1547$cm^{-1}$depending on the species of cation and the dehydration temperature. The carbonyl stretching band shifted about 190$cm^{-1}$ to lower frequencies has been observed only for polyvalent cations, which has been attributed to $>C=O{\cdot}{\cdot}{\cdot}M^{n+}$ complex formation. The band appeared at 1703∼1640$cm^{-1}$ is responsible for hydrogen bonding between carbonyl oxygen and cationic water or cationic hydroxyl group, and the degree of shift indicates good correlation with the polarizing power of the interlayer cations. However, the band appeared at 1723$cm^{-1}$ has not been correlated with the species of cation but assigned to the carbonyl stretching which reacted with the surface hydroxyl group. On the basis of interlamellar spacing, it is suggested that the molecular plane of MMA molecule is parallel to silicate layers.

• Bulletin of the Korean Chemical Society
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• v.35 no.12
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• pp.3590-3594
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• 2014

Blue phosphorescent $(dfpypy)_2Ir(mppy)$, where dfpypy = 2',6'-difluoro-2,3'-bipyridine and mppy = 5-methyl-2-phenylpyridine, has been synthesized by newly developed effective method and its solid state structure and photoluminescent properties are investigated. The glass-transition and decomposition temperature of the compound appear at $160^{\circ}C$ and $360^{\circ}C$, respectively. In a crystal packing structure, there are two kinds of intermolecular interactions such as hydrogen bonding ($C-H{\cdots}F$) and edge-to-face $C-H{\cdots}{\pi}(py)$ interaction. This compound emits bright blue phosphorescence with ${\lambda}_{max}=472nm$ and quantum efficiencies of 0.23 and 0.32 in fluid and the solid state. The emission band of the compound is red-shifted by 40 nm relative to homoleptic congener, $Ir(dfpypy)_3$. The ancillary ligand in $(dfpypy)_2Ir(mppy)$ has been found to significantly destabilize HOMO energy, compared to $Ir(dfpypy)_3$, $(dfpypy)_2Ir(acac)$ and $(dfpypy)_2Ir(dpm)$, without significantly changing LUMO energy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.182-182
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• 1999

The chemisorption effect of CO on the Ni/Cu(001) surface was investigated using LEED(Low Energy Electron Diffraction) and EELS(Electron Energy Loss Spectrscopy0 under the UHV conditions. after mounting the Cu(001) single crystal in the UHV chamber (base pressure 1$\times$10-10Torr), a clean surface was obtained after a few cycles of repeated Ar+ ion sputtering and annealing at about 40$0^{\circ}C$. The epitaxial thin Ni films were formed on the Cu(001) by evaporation from 99.999% Ni block. The pseudomorphic growth and the orderness of the thin Ni films were monitored by c(2$^{\circ}C$2) LEED pattern. CO adlayers on Ni epitaxial thin films were prepared by dosing pure CO has through a leak valve. After CO adsorpton at room temperature, two pairs of peaks were observed by EELS, whose relative intensities are changed as the film thickness is varied and time is elapsed. These two pair of peaks are likely related to different bonding sites (-top and bridge sites) of C-Ni as well as C-O vibration. Experimental results and qualitative interpretation of the spectra wille be discussed. The possibility of using EELS in combination with probe species (CO) to investigate the nature of thin film growth is mentioned. We will report the experimental result of O2 dosage on Ni film and interaction of CO and O2.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.112-117
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• 2008

Vertical interconnection scheme using novel silicon-through-via for 3D MEMS devices or stacked package is proposed and fabricated to demonstrate its feasibility. The suggested silicon-through-via replaces electroplated copper, which is used as an interconnecting material in conventional through-via, with doped silicon. Adoption of doped silicon instead of metal eliminates thermal-mismatch-induced stress, which can make troubles in high temperature MEMS processes, such as wafer bonding and LP-CVD(low pressure chemical vapor deposition). Two silicon layers of $30{\mu}m$ thickness are stacked on the substrate. The through-via arrays with spacing $40{\mu}m$ and $50{\mu}m$ are fabricated successfully. Electrical characteristics of the through-via are measured and analyzed. The measured resistance of the silicon-through-via is $169.9\Omega$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Journal of the Korean Society of Safety
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• v.26 no.2
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• pp.13-19
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• 2011

The magnetic polishing is the useful method to finish using magnetic power of magnet. That method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Sr-Ferrite. In this development, abrasive grain GC used to resin bond fabricated low temperature. And Sr-Ferrite of magnetic abrasive powder fabricated that Sr-Ferrite was crused into 200 mesh. The XRD analysis result show that only GC abrasive and Sr-Ferrite crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it is found that GC abrasive and Sr-Ferrite were strong bonding with each other by bond. The magnetic polishing is performed by polishing the surface of pipe by attracting magnetic abrasives with magnetic fields. This can be widely applied for finishing machinery fabrications such as various pipes and for other safety processes. In this paper, we could have investigated in to the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.2
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• pp.139-145
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• 1998

Filament winding method is widely used for composite fabrications using low viscosity liquid for-mation and processing asymmetrical structures of pressure vessel pipe rocket motor case etc. The filament winding method is affected by several parameters such as pot life of process time viscosi-ty of resin filament winding temperature and schedules curing condition and post curing condi-tion of resin. To develope high functional composite materials the rotation(5, 15, 20, 30rpm) of the winding machine was controlled by D.C motor. And the wiper to give proper tension was equipped between strand and resin bath. The resin is hooked by the design wiper. The adequate cure schedule was found by DSC. NOL ring test is carried out to investigate the basic physical properties such as design technology. The void contents in filament winding is generally higher than that of the prepreg laminated plate. These high contents of void can make a crack in resin in spite of low deformation. These problem was solved by giving tension in processing. To improve the characteristics of fiber volume fraction void contents resin/fiber bonding the winding speedc is changed under constant tension. It was found that resin impregnation was not different from in fiber contents void contents at the range of 0.5~1kg tension but it was found that resin was not impregnated at the above of 1.5kg tension. In burst test a pure PE liner was failed at a nozzle part under the $14kg/\textrm{cm}^2$ pressure but a pressure vessel of CNG was failed at a cylinder part under the $200kg/\textrm{cm}^2$ pressure.