• Journal of Welding and Joining
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• v.32 no.4
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• pp.46-54
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• 2014

In this study, the effect of bonding temperature and bonding pressure on deformation and tensile properties of diffusion bonded joint of STS304 compact heat exchanger was investigated. The diffusion bonds were prepared at 700, 800 and $900^{\circ}C$ for 30, 60 and 90 min in pressure of 3, 5, and 7 MPa under high vacuum condition. The height deformation of joint decreased and the width deformation of joint increased with increasing bonding pressure at $900^{\circ}C$. The ratio of non-bonded layer and void observed in the joint decreased with increasing bonding temperature and bonding pressure. Three types of the fracture surface were observed after tensile test. The non-bonded layer was observed in diffusion bonded joint preformed at $700^{\circ}C$, the non-bonded layer and void were observed at $800^{\circ}C$. On the other hand, the ductile fracture occurred in diffusion bonded joint preformed at $900^{\circ}C$. Tensile load of joint bonded at $800^{\circ}C$ was proportional to length of bonded layer and tensile load of joint bonded at $900^{\circ}C$ was proportional to minimum width of pattern. The tensile strength of joint was same as base metal.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.63-67
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• 2011

We investigated effects of bonding conditions on the peel strength of rigid printed circuit board (RPCB)/ flexible printed circuit board (FPCB) joints bonded using a thermo-compression bond method, The electrodes on the FPCB were coated with Sn by a dipping process. We confirmed that the bonding temperature and bonding time strongly affected the bonding configuration and strength of the joints. Also, the peel strength is affected by dipping conditions; the optimum dipping condition was found to be temperature of $270^{\circ}C$ and time of 1s. The bonding strength linearly increased with increasing bonding temperature and time until $280^{\circ}C$ and 10s. The fracture energy calculated from the F-x (Forcedisplacement) curve during a peel test was the highest at bonding temperature of $280^{\circ}C$.

• Transactions of Materials Processing
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• v.22 no.5
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• pp.269-274
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• 2013

Experiments and numerical simulations of the incremental upsetting test were carried out to investigate void closure behavior and mechanical characteristic of a 1.5wt%C ultra-high carbon steel. The experimental results showed that the voids become quickly smaller as the reduction ratio increases. The simulation results confirmed this behavior and indicated that the voids were completely closed at a reduction ratio of about 40~45% during incremental upsetting. After the completion of the incremental upsetting tests, the process of diffusion bonding was employed to heal the closed voids in the deformed specimens. To check the appropriate temperature for diffusion bonding, deformed specimens were kept at 800, 900, 1000 and $1100^{\circ}C$ for an hour. In order to investigate the effect of holding time for diffusion bonding at $1100^{\circ}C$, specimens were kept at 10, 20, 30, 40, 50 and 60minutes in the furnace. A distinction between closed and healed voids was clearly established using microstructural observations. In addition, subsequent tensile tests demonstrated that complete healing of a closed void was achieved for diffusion bonding temperatures in the range $900{\sim}1100^{\circ}C$ with a holding time larger than 1 hour.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.9-17
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• 2017

In these days, MEMS (micro-electro-mechanical system) devices become the crucial sensor components in mobile devices, automobiles and several electronic consumer products. For MEMS devices, the packaging determines the performance, reliability, long-term stability and the total cost of the MEMS devices. Therefore, the packaging technology becomes a key issue for successful commercialization of MEMS devices. As the IoT and wearable devices are emerged as a future technology, the importance of the MEMS sensor keeps increasing. However, MEMS devices should meet several requirements such as ultra-miniaturization, low-power, low-cost as well as high performances and reliability. To meet those requirements, several innovative technologies are under development such as integration of MEMS and IC chip, TSV(through-silicon-via) technology and CMOS compatible MEMS fabrication. It is clear that MEMS packaging will be key technology in future MEMS. In this paper, we reviewed the recent development trends of the MEMS packaging. In particular, we discussed and reviewed the recent technology trends of the MEMS bonding technology, such as low temperature bonding, eutectic bonding and thermo-compression bonding.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.10 s.181
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• pp.2461-2468
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• 2000

In this paper, single fiber pull-out test is used to measure the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory alloy composite with temperature. Fiber and matrix of $Ti_{50}-Ni_{50}$ shape memory alloy composite are respectively $Ti_{50}-Ni_{50}$ shape memory alloy and epoxy resin. To strengthen the interfacial bonding shear stress, various surface treatments are used. They are the hand-sanded surface treatment, the acid etched surface treatment and the silane coupled surface treatment etc.. The interfacial bonding shear strength of surface treated shape memory alloy fiber is greater than that of surface untreated shape memory alloy fiber by from 10% to 16%. It is assured that the hand-sanded surface treatment and the acid etched surface treatment are the best way to strengthen the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory composite. The best treatment condition of surface is 10% HNO$_3$ solution in the etching method to strengthen the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory alloy composite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.785-790
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• 2002

Distributions of residual stress in diffusion bonding of dissimilar materials intermetallics TiAl to steel 40Cr were simulated by FEM calculation. Results showed that destructive residual stresses presented in the minute area adjacent to bond-line of the base material with smaller coefficient of thermal expansion. Reducing bonding temperature and diminishing bonding time are in favor of the mollification of interface tresses.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.11-18
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• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.419-420
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• 2008