• Journal of the Korean Magnetic Resonance Society
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• v.8 no.2
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• pp.127-138
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• 2004

We obtained the chemical shifts of amide protons (NHs) in helical peptides at various temperatures and trifluoroethanol (TFE) concentrations using 2-dimensional NMR spectroscopy. These NH chemical shifts and their temperature dependence exhibited characteristic periodicity of 3-4 residues per cycle along the helix, where downfield shifted NHs showed larger temperature dependence. In an attempt to understand these observations, we focused on hydrogen bonding changes in the peptides and examined the validity of two possible explanations: (1) changes in intermolecular hydrogen bonding caused by differential solvation of backbone carbonyl groups by TFE, and (2) changes in intramolecular hydrogen bonding due to disproportionate variations in the hydrogen bonding within the peptide helix. Interestingly, the slowly exchanging NHs, which were on the hydrophobic side of the helix, showed consistently larger temperature dependences. This could not be explained by the differential solvation assumption, because the slowly exchanging NHs would become more labile if the preceding carbonyl groups were preferentially solvated by TFE. We suggest that the disproportionate changes in intramolecular hydrogen bonding better explain both the temperature dependence and the exchange behavior observed in this study.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.89-96
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• 2003

The change of microstructures in the base metal during transient liquid phase bonding process of directionally Ni base superalloy, GTD-111 was investigated. Bonds were fabricated using a series of holding times(0-7.2ks) at three different temperatures(1403, 1418 and 1453K) under a vacuum of 13.3mPa. In raw material, ${\gamma}$- ${\gamma}$' eutectic phases, platelet η phases, MC carbide and PFZ were seen in interdendritic regions or near grain boundary and size of primary ${\gamma}$' precipitates near interdendritic regions were bigger than core region. The primary ${\gamma}$' precipitates in dendrite core were dissolved early in bonding process, but ${\gamma}$' precipitates near interdendritic regions were dissolved partially and shape changed. The dissolution rate increased with increasing temperature. Phases in interdendritic regions or near pain boundary continually changed with time at the bonding temperature. In the bonding temperature of 1403K, eutectic phases had not significantly changed, but η phases had transformed from platelet shape to needle morphology and PFZ region had widened with time. The interdendritic region and near pain boundary were liquated partially at 1423k and fully at 1453k by reaction of η phases and PFZ. In the bonding temperature of 1453K, interdendritic region and near pain boundary were liquated and then new phases which mixed with η phases, PFZ and MC carbide crystallized during cooling. Crystallized η phases transformed from rod shape to platelet shape with increasing holding time.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.1-4
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• 2015

In this study, we analyzed the correlation between mechanical and electrical properties of low-temperature conductive film (LT-CF) bonded silicon solar cells by a quadrant analysis (horizontal axis (peeling strength), vertical axis (power loss)). We found that a series of points with various bonding parameters such as bonding temperature, pressure and time were distributed in the different three regimes; weak regime (Q2: weak bonding strength and high power loss), moderate regime (Q4 : strong bonding strength and low power loss) and hard regime (Q3 : weak bonding strength and low power loss). Using this analogous technique, it was possible to fabricate the LT-CF bonded silicon solar cells with the various conditions displayed in Q3 of the quadrant plots, possessing the peeling strength of ~ 1N/mm and power loss of 2~3%.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.319-325
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• 2010

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.285-287
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• 2002

This study is investigated in variations of micro-structures and mechanical properties of Ti/SUS321L joint with bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed the thickness of their reaction layer increased. In tensile test, it was examined that the tensile strength had maximum value at the bonding time of 5min and decreased after bonding time over 5min because of increasing their oxides and intermetallic compounds.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.4
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• pp.250-254
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• 2016

In this paper, solar-cell modules were fabricated by low-temperature bonding method of construction using CF. CF adhesive strength of cells at 180 degree using 3bus bar structure was measured average 2.4N. As the bonding temperature got higher, Voc and Iscwas increased. And at $185^{\circ}C$, Rseries was measured 0.013[${\Omega}$] which is the highest point. At $185^{\circ}C$, 2N and 6sec in bonding time, $P_{max}$ was measured 3.954[W], fillfactor was measured 67.36[%] and efficiency was measured13.178[%] the highest point.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.15-23
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• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• Journal of the Korean Society of Safety
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• v.32 no.1
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.43-45
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted to heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated and heat transfer model was applied for obtaining the transient temperature profile. The transmission laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.9-15
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• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.