• The Journal of Korean Academy of Prosthodontics
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• v.34 no.4
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• pp.833-849
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• 1996

The material of choice for functional and esthetic reconstruction of maxillofacial defects is silicone. Silicone has appropriate physical properties for maxillofacial prosthesis but it has weak edge strength. Therefore, a proper combination of silicone and polyurethane sheet is recommended to improve this weakness. Various primers are also used to enhance the adhesive strength between silicone and polyurethane sheet. The purpose of this study was to determine the adhesive strength of silicone and polyurethane sheet. Silicone elastomer mixture was made by admixing MDX4-4210 elastomer (40%) and Silastic Medical Adhesive Type A(60%). This silicone elastomer mixture was attached to polyurethane sheet, using one of three different primers(1205, S-2260, or A-304), treated for 1, 2, 4, 6, and 8 hours. These were then polymerized in room temperature, dry-heat oven or microwave oven. Six specimens per each group, a total of 270 specimens were prepared for final test. The differences of T-peel bonding strengths were then determined by a test. The differences of T-peel bonding strengths were then determined by a test method that was recommended by American Society for Testing and Materials C794-80. The results were statistically analyzed using the ANOVA and Mutiple Range Tests(Tukey' HSD). The reults were as follow. 1. Type of primer, primer reaction time, and methods of polymerization showed significant correlation on the T-peel bonding strengths in adhesiveness between silicone and polyurethane sheet. 2. A-304 primer showed statistically higher in T-peel bonding strength than otehr type of primers except for the polymerization in microwave oven with reaction times of 2, 6 hours(p<0.05). 3. No significant differences in T-peel bonding strength were observed among the polymerization methods. 4. The effect of reaction time by the primer type and polymerization method showed statistically significant differences in bonding strength among different reaction times. And in most cases, reaction time of 1 or 2 hours showed higher T-peel bonding strength.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.342-346
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• 2016

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.64-69
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• 2003

The bonding phenomena and mechanical property of duplex stainless steel during brazing have been investigated. The UNS32550 was used for base metal, and the MBF50 was used for insert metal. Brazing was carried out under the various conditions (brazing temperature : 1473K, 1498K, holding time : 0∼1.8ks). There were various microconstituents in the bonded interlayer because of reaction between liquid insert metal and base metal. In the early stage of brazing, BN is formed in the bonded interlayer and base metal near the bonded layer. Cr made is formed in the bonded interlayer. The amount of BN and Cr nitrides decrease with the increase of bonding temperature and holding time. Superior shear strength of 550MPa is obtained by restraining the formation of nitrides. (Received January 17, 2003)

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.139-142
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• 2004

Nickel base superalloys are widely used for high temperature applications due to heat resisting capability and corrosion resistance at high temperatures. Superalloys with many strengthening alloying elements are frequently used in powder form to alleviate harmful effects of alloy segregation. HIP (hot isostatic pressing) and DB (diffusion bonding) as a form of solid-state bonding process is used to make turbine components, such as integrated turbine rotors. HIP/DB process requires many technical overcomes related to dimensional changes as well as microstructural control. In this research, HIP/DB process for nickel base superalloys, Udimet 720 and MM 247, were investigated with a view to control the dimensional change during the consolidation process. Simple disc-shaped cans were used to select the conceptual die design for the control of the dimensional change especially in radial direction. The change in the shape of consolidated shape was investigated using commercial FE code with constitutive equations fur low temperature plasticity deformation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2002.10a
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• pp.183-188
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• 2002

Co-cured composite materials has its own characteristics, so its thermal expansion is different each other. The selection of tool material for co-cured composite part in high temperature more over $350^{circ}F$ and 50 Psi pressure have to consider part thermal expansion, size, shape, and economic aspect in production line. So it is important choose tooling material in manufacturing composite parts. We called the tool for airplane composite parts as BAJ (Bonding Assembly Jig). Composite parts are cured on the BAJ in autoclave. BAJ have to stable at high temperature over $350^{circ}F$ and 50 Psi pressure, Considering composite parts' dimensional tolerance compare to heat up in autoclave. This paper come from the results of the experiment at the composite parts production line and review other aircraft company's method for tooling This is for the engineer engaged in composite parts manufacturing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.921-926
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• 1997

SOI(Silicon On lnsulator) technology is many advantages in the gabrication of MOS(Metal-Oxide Semiconductor) and CMOS(Complementary MOS) structures. These include high speed, lower dynamic power consumption,greater packing density, increased radiation tolearence et al. In smiple form of bonded SOL wafer manufacturing, creation of a bonded SOI structure involves oxidizing at least one of the mirror polished silicon surfaces, cleaning the oxidized surface and the surface of the layer to which it will be bonded,bringing the two cleanded surfaces together in close physical proximity, allowing the subsequent room temperature bonding to proceed to completion, and than following this room temperature joining with some form of heat treatment step,and device wafer is thinned to the target thickness. This paper has been performed to investigate the possibility of the bonded SOI wafer manufacturing Especially, we focused on the bonding quality and thinning method. Finally,we achieved the bonded SOI wafer that Si layer thickness is below 3 .mu. m and average roughness is below 5.angs.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.92-98
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• 2000

A ring comprising a coated conductor was fabricated. A ring was made first using a biaxially textured Ni tape whose two ends were connected by means of the atomic diffusion bonding technique. Then buffer layers and a YBCO film were deposited on it. All the films were well textured as confirmed by XRD pole figures. The B-H loops, where B and H are the magnetic field at the center of the ring and the applied field respectively, were measured as a function of temperature. The persistent current density (J$_c$) flowing circularly was estimated from the remanent field of B. In the range of temperature from 72K to 20K, J$_c$ changed from zero to 2${\times}$1 0$^5$A/cm$^2$.