• Journal of Information Display
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• v.2 no.3
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• pp.18-31
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• 2001

We utilize Fourier transform infrared (IR) spectroscopy to probe intramolecular hydrogen bonding in $smectic-C^{\ast}$ liquid crystal phases. Infrared spectra of aligned smectic liquid crystal materials vs. temperature and of isotropic liquid crystal mixtures vs. concentration were measured in homologs, both with and without hydrogen bonding. Hydrogen bonding significantly changes the direction and magnitude of the vibrational dipole transition moments, causing marked changes in the IR dichroic absorbance profiles of hydrogen bonded molecular subfragments. A GAUSSIAN94 computation of the directions, magnitudes, and frequencies of the vibrational dipole moments of molecular subfragments shows good agreement with the experimental data. The results show that IR dichroism can be an effective probe of hydrogen bonding in liquid crystal phases.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.8 no.2
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• pp.76-82
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• 2009

In this papers, Study on the Bonding property and Strength Evaluation in Bonding interface Joints of Dissimilar material using DOE. We found optimal condition that uses experimental design method (Response Surface Analysis, DOE) used temperature, pressure, time on experiment factor. And we could get bonding condition and strength that break and crack do not happen in mechanical processing about united dissimilar material. And progress 3 point bending tests and verified result.

• Journal of Welding and Joining
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• v.13 no.4
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• pp.147-154
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• 1995

In order to study the bonding mechanism of Ni/B/Ni transient liquid phase bonding system, width of liquid layers were calculated, where in this system melting point of insert material(B) is higher than bonding temperature and melting point of base metal(Ni). Caclulated values were compared with experimental ones which were measured by bonding Ni/B/Ni system at 1433-1474K under vacuum atmosphere. As results, the width of initial liquid layer of Ni/B/Ni system was calculated as $W_{IL}$ = $W_{o}$[1 + {2.100..rho.$_{S/}$ ( $X_{3}$ + $X_{4}$)..rho.$_{Ni}$ }-.rho.$_{S/}$.rho. Ni/], and it was nearly same with experimental values. Maximum width of liquid layer, width of liquid layer during isothermal solidification and isothermal solidification time were calculated also.o.o.o.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.34-36
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• 2005

Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.365-371
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• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.

• Transactions of Materials Processing
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• v.6 no.2
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• pp.136-144
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• 1997

(Ag-10%Ni)/Cu clad metals for electric contact switch were fabricated by cold-roll bonding process. 2 or 3 passes of cold-rolling was carried out for each process to investigate the effect of the rolling passes on the bonding property. The effect of the annealing temperature of copper before the cold-roll bonding on the bond strength was also studied. The specimen bonded with copper annealed below 30$0^{\circ}C$ before roll bonding showed good bond strength. This is because high stored energy in copper promoted the short range diffusion and the grain refinement of copper by the static recrystallization increased the degree of the interfacial coherency. The maximum peel strength of clad metals bonded with Cu annealed below 30$0^{\circ}C$ was 120N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.615-624
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• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• Transactions of Materials Processing
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• v.28 no.1
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• pp.15-20
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• 2019

The superplastic forming/diffusion bonding process has been developed to fabricate a core frame structure with joint nodes out of tubes, for the development of a titanium high performance bicycle. The hydroforming process has been applied for bulging of a tube in the superplastic condition before, and during the diffusion bonding process. In this experiment, a commercial Ti-3Al-2.5V tube was selected as raw material for the study. The forming experiment has been performed using a servo-hydraulic press with a capacity of 200 ton. Next, nitrogen gas was used to acquire necessary pressure for the bulging and bonding of the tubes to fabricate the joint nodes. The pertinent processing temperature was $870^{\circ}C$ for the superplastic hydroforming/diffusion bonding (SHF/DB) process, using the Ti-3Al-2.5V tube. The bonding quality and the progress of bulging and diffusion bonding have been observed by the investigation of the joining interfaces at the cross section of the joint structure. The control of the nitrogen pressure throughout the SHF/DB process, was an important factor to avoid any significant defects in the joint structure. The whole progress stage of the diffusion bonding could be observed at a joint interface. A core structure with 5 joint nodes to manufacture a titanium bicycle could be obtained in a SHF/DB process.

• Transactions of Materials Processing
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• v.20 no.2
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• pp.140-145
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• 2011

The aim of the present study is to derive optimized post heat treatment temperatures to get a proper formability for Ti/STS409L/Ti clad materials. These clad materials were fabricated by cold rolling followed by a post heat treatment process for 10 minutes at temperatures ranging from $500^{\circ}C$ to $850^{\circ}C$. The microstructure of the interface was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersive X-ray Analyser(EDX) in order to investigate the effects of post heat treatment on the bonding properties of the Ti/STS409L/Ti clad materials. Diffusion bonding was observed at the interfaces with a diffusion layer thickness increasing with the post heat treatment temperature. The diffusion layer was composed of a type of(${\varepsilon}+{\zeta}$) intermetallic compound containing additional elements, namely, Fe, Ti and Ni. The micro Knoop hardness of the Ti/STS409L interfaces was found to increase with heat treatment up to $800^{\circ}C$ and then decrease for temperatures rising up to $850^{\circ}C$. The tensile strength was shown to decrease for heat treatment temperature increasing to $750^{\circ}C$ and then increase rapidly for temperature rising up to $850^{\circ}C$. A post heat treatment temperature range of $700{\sim}750^{\circ}C$ was found to optimize the formability of Ti/STS409L/Ti clad materials.

• Journal of the Korean institute of surface engineering
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• v.31 no.1
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• pp.12-23
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• 1998

The Thermal Barrier Coating(TBC) has been used to improve the heat barrier and tribological properties of the aircraft engine and the automobile engine in high temperature. Especially, the high temperature tribological propertied of the cylinder haed and the piston crown of diesel engine was emphasized. Therefore, the purpose of this work was to evaluate the microstructure, tribological propeer in high tempearmal shock resistance and bonding strength of five layer functionally gradient TBC for the applications. The five layerwere composed with 100% ceramic insulating later, 75(ceramic):25 (metal) layer, 50:50 layer, 25:75 layer and 100% metal bonding layer to redude the thermal stress. the YSL and MSL poweders were the insulation ceramics powers. The NiCrAly, Inconel625 and SUS powders were the bonding and mixingg powders for plasma spray process. According to the result of high temperature wear test, the wera resistance of YSZ/NiCrAlY siytem was most out standing at 600 and $800^{\circ}C$. At $400^{\circ}C$, the wear resistance of YSZ/Inconel system was better than others. Wear volume at other temperature because of the low temperature degration of zirconia. The thermal shock mechanism of 5 later is the vertical crack gegration in insulating layer. this means that the initial cracks were generated in the top layer, and then developed into the composite layers during thermal shock test. Finally, these cracks werereached to the interface of coating and substrate and also, these vertioal cracks join with the horizontal cracks of the each layers. The bonding strength of YSZ/NiCrAlY and YSZ/Inconel 5 layer system is better than other 5layer systems. The theramal shock resistance of thermal barrier coating s with 5 layer system is better than that of 3 layers and 2 layers.