• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Journal of Welding and Joining
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• 제35권3호
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• pp.52-61
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• 2017

Transient liquid phase (TLP) bonding is essential technology to repair micro-cracking on the airfoil of blades and vanes for gas turbines. Understanding of the characteristics of TLP bonding of the superalloys is necessary in the application of the technology for repairing these components. In this study, the focus was on investigating TLP bonding characteristics of ${\gamma}^{\prime}$ precipitation strengthened Ni based superalloy. TLP bonding was carried out with an amorphous filler metal in various bonding conditions, and the microstructural characterization was investigated through optical microscopy (OM) and electron probe micro-analysis (EPMA). The experimantal results explained clearly that bonding temperatures had critical effects on the TLP bonding behaviors, and that isothermal solidication of the joints made at higher temperatures than $1170^{\circ}C$ was controlled by Ti diffusion instead of B.

• Journal of Welding and Joining
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• 제23권5호
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• pp.55-60
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.228-228
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• 2008

본 논문에서는 epoxy bonding film의 phenoxy resin의 함량변화에 따른 특성 변화에 대하여 연구하였다. epoxy bonding film은 미세패턴 구현을 위해서 사용되는 기판재료로써 epoxy, hardener, silica, phenoxy resin 등이 첨가되어진다. phenoxy resin 함량을 변화를 주면서 tape casting 방법을 통해서 flim 형성을 한 후, 제작된 film의 phenoxy resin 함량변화에 따른 조도 특성의 연구를 위해서 sweller, desmear 공정을 후 RA(Roughness Average)를 측정하고, SEM으로 표면을 관찰하였다. 또한 제작된 bonding film을 가열 가압 후 구리 도금공정을 거쳐 peel strength를 측정하였다. phenoxy resin 함량이 증가 할수록 RA가 증가되어지는 것이 관찰되어졌고, 또 한 peel strength 증가하였다.

• 한국방사선학회논문지
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• 제8권7호
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• pp.371-376
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• 2014

CdTe 멀티에너지 X선 영상센서와 ROIC를 패키징 하기 위한 flip chip bump bonding, Au wire bonding 및 encapsulation 공정조건을 개발하였으며 성공적으로 모듈화 하였다. 최적 flip chip bonding 공정 조건은 접합온도 CdTe 센서 $150^{\circ}C$, ROIC $270^{\circ}C$, 접합압력 24.5N, 접합시간 30s일 때이다. ROIC에 형성된 SnAg bump의 bonding이 용이하도록 CdTe 센서에 비하여 상대적으로 높은 접합온도를 설정하였으며, CdTe센서가 실리콘 센서에 비하여 쉽게 파손되는 것을 고려하여 접합압력을 최소화하였다. 패키징 완료된 CdTe 멀티에너지 X선 모듈의 각각 픽셀들은 단락이나 합선 등의 전기적인 문제점이 없는 것을 X선 3D computed tomography를 통해 확인할 수 있었다. 또한 Flip chip bump bonding후 전단력은 $2.45kgf/mm^2$ 로 측정되었으며, 이는 기준치인 $2kgf/mm^2$ 이상으로 충분한 접합강도를 가짐을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• 전자통신동향분석
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• 제33권6호
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• pp.50-57
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• 2018

As devices have evolved, traditional flip chip bonding and recently commercialized thermocompression bonding techniques have been limited. Laser-assisted bonding is attracting attention as a technology that satisfies both the requirements of mass production and the yield enhancement of advanced packaging interconnections, which are weak points of these bonding technologies. The laser-assisted bonding technique can be applied not only to a two-dimensional bonding but also to a three-dimensional stacked structure, and can be applied to various types of device bonding such as electronic devices; display devices, e.g., LEDs; and sensors.

• 한국정밀공학회지
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• 제27권7호
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• pp.7-12
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• 2010

In this paper, chip-on-glass(COG) interconnection with anisotropic conductive film(ACF) using lateral thermosonic bonding technology is considered. In general, thermo-compression bonding which is used in practice for flip-chip bonding suffers from the low productivity due to the long bonding time. It will be shown that the bonding time can be improved by using lateral thermosonic bonding in which lateral ultrasonic vibration together with thermo-compression is utilized. By measuring the internal temperature of ACF, the fast curing of ACF thanks to lateral ultrasonic vibration will be verified. Moreover, to prove the reliability of the lateral thermosonic bonding, observation of pressured mark by conductive particles, shear test, and water absorption test will be conducted.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.551-552
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• 2008

This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.