Journal of the Microelectronics and Packaging Society
/
v.23
no.1
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pp.17-22
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2016
Flexible organic light-emitting diode (OLED) devices consist of multi-stacked thin films or layers comprising organic and inorganic materials. Due to thermal coefficient mismatch of the multi-layer films, warpage of the flexible OLED is generated during high temperature process of each layer. This warpage will create the critical issues for next production process, consequently lowering the production yield and reliability of the flexible OLED. In this study, we investigate the warpage behavior of the flexible OLED for each bonding process step of the multi-layer films using the experimental and numerical analysis. It is found that the polarizer film and barrier film show significant impact on warpage of flexible OLED, while the impact of the OCA film on warpage is negligible. The material that has the most dominant impact on the warpage is a plastic cover. In order to minimize the warpage of the flexible OLED, we estimate the optimal material properties of the plastic cover using design of experiment. It is found that the warpage of the flexible OLED is reduced to less than 1 mm using a cover plastic of optimized properties which are the elastic modulus of 4.2 GPa and thermal expansion coefficient of $20ppm/^{\circ}C$.
Journal of the Korean Society for Nondestructive Testing
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v.35
no.1
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pp.46-51
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2015
Stainless steel is a popular structural materials for liquid-hydrogen storage containers and piping components for transporting high-temperature fluids because of its superior material properties such as high strength and high corrosion resistance at elevated temperatures. In general, tungsten inert gas (TIG) arc welding is used for bonding stainless steel. However, it is often reported that the thermal fatigue cracks or initial defects in stainless steel after welding decreases the reliability of the material. The objective of this paper is to clarify the characteristics of ultrasonic guided wave propagation in relation to a change in the initial crack length in the welding zone of stainless steel. For this purpose, three specimens with different artificial defects of 5 mm, 10 mm, and 20 mm in stainless steel welds were prepared. By considering the thickness of s stainless steel pipe, special attention was given to both the L(0,1) mode and L(0,2) mode in this study. It was clearly found that the L(0,2) mode was more sensitive to defects than the L(0,1) mode. Based on the results of the L(0,1) and L(0,2) mode analyses, the magnitude ratio of the two modes was more effective than studying each mode when evaluating defects near the welded zone of stainless steel because of its linear relationship with the length of the artificial defect.
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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2008.04a
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pp.41-41
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2008
In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.
Journal of the Korea Academia-Industrial cooperation Society
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v.17
no.3
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pp.16-23
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2016
DFRCC (ductile fiber reinforced cementitious composites), which are a significantly improved ductile material compared to conventional concrete, were evaluated as a new construction material with a high potential applications to concrete structures for a range of purposes. In this study, experiments on the failure behavior of composite beams with a DFRCC and FRP (fiber reinforced polymer) plank with a rib used as permanent formwork and tensile reinforcement were carried out. A normal concrete and a fiber reinforced concrete with PVA series of RF4000 and the PP series of PP-macro were used for comparison, and each RF4000+RSC15 and PP-macro+RSC15 was tested by producing composite beams. The experimental results of the FRP plank without a sand coating showed that sliding failure mode between the FRP plank and concrete started from a flexural crack at the beam center; therefore it is necessary for the FRP plank to be coated with sand and the effect of the fiber to failure mode did not appear to be huge. The experiment of the FRP plank with a sand coating showed that both 1200mm and 2000mm allowed sufficient bonding between the concrete and FRP plank. The maximum load of the fiber reinforced concrete was higher than that of normal concrete and the case which a series of PP fiber was mixed showed the highest value. The crack latency caused by the fibers led to composite action with a FRP rib.
A major purpose of this study is to develop a drainage system that can quickly drain water penetrated into pavement layers to mitigate pot holes which is one of the major distress types in bridge deck pavements. This system can be established by applying a thin drainage layer between waterproof and pavement layers. The most important elements for this system are the performance of waterproof layer and construction technique for the thin drainage layer. The porous asphalt mix with the maximum aggregate size of 10mm is first developed based on the porous asphalt mix design guide proposed by NCAT, and various physical and mechanical tests are performed to confirm that the porous mix satisfies all the specification requirements. In addition, a series of laboratory tests including low-temperature bending and bonding strength tests for the MMA(Methyl Methacrylate) type of waterproofing material. It is observed from the tests that the MMA material satisfies all the specification requirements. To evaluate the Reld performance of the drainage system, a field study has been conducted on a relatively small size bridge. The QC/QA tests are conducted on the both waterproofing and pavement materials. It has been found that the drainage system works well to drain the water penetrated into the pavement layers.
Kim, Taehong;Lee, Sangku;Son, Byunghee;Paik, Hyun-Jjong;Yoon, Sanghyeon;Lee, Heesoo
Journal of the Korean Crystal Growth and Crystal Technology
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v.23
no.1
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pp.31-36
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2013
Acetylated Cellulose Ether (ACE), cellulose-based amphiphilic polymer with hydrophilic and hydrophobic, was synthesized and investigated in terms of its solubility and wettability for organic solvents and water. Acetyl group was substituted to the cellulose ether in a hydrophilic polymer by esterification. As a result of FT-IR, the peak corresponding to the hydroxyl group decreased and carboxyl acid peak increased with increasing reaction time and temperature, which signified the increase in the degree of acetylation of the ACE. There were similar thermal decomposition behaviors before and after esterification reaction until $800^{\circ}C$ so that the reaction occurred without significant structural changes of cellulose backbones. The solubility parameter of the ACE had a range of 18.5~26.4, and its viscosity and turbidity were controlled according to the solubility parameter of organic solvents. The ACE showed the hydrophilicity because the contact angle of the ACE was higher than the cellulose ether. These results confirmed that the ACE had the hydrophobicity and hydrophilicity due to the ether which was glucosidic bonding between the glucose units and un-reacted hydroxyl functional groups in the ACE.
Kim, Dong-Pyo;Woo, Jong-Chang;Um, Doo-Seng;Yang, Xue;Kim, Chang-Il
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2008.11a
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pp.363-363
/
2008
The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.
In this paper, a total of 13 beams with bonding, anchorage system, amount of prestressing and span length as variables of experiment were tested in flexural test and analyzed in finite element analysis; one control beam, two simplified FRP-boned beams, four prestressed FRP-unbonded beams and four prestressed FRP-bonded beams. Also, a nonlinear finite element analysis of beams in the flexural test is performed by DIANA program considered material nonlinear of concrete, reinforcement and the interfacial bond-slip model between concrete and CFRP plates. The failure mode of prestressed CFRP plated-beams is not debonding but FRP rupture. RC members strengthened with external bonded prestressed CFRP plates occurred 1st and 2nd debonding of the composite material. After the debonding of CFRP plates occurs in bonded system, behavior of bonded CFRP-plated beams change into that of unbonded CFRP-plated beams due to fix of the anchorage system. Also, It was compared flexural test results and analytical results of RC members strengthened with CFRF plates. The ductility of beams strengthened by CFRP plates with the anchorage system is considered high with the ductility index of above 3. Analysis results showed a good agreement with experiment results in the debonding load, yield load and ultimate load.
Thin Spray-on Liners(TSLs) based on polymer materials have been considered as an alternative to shotcrete and wire mesh in relatively fair rock conditions, and used in mines since 1990s. Nevertheless, Few experimental studies on their mechanical properties necessary for the evaluation of their bearing capacities as a support member have been carried out. In this study, tensile and bond strengths of two kinds of TSLs with different material compositions were measured at the age of 7 days. In addition, two kinds of bending tests proposed by EFNARC (2008) to simulate representative failure mechanisms of TSLs were carried out on the same materials and curing age as in tension and pull-out tests. From the tests, tensile strength of a TSL is shown to increase as its content of polymer is higher. In contrast, its bond strength seems to be in inverse proportion to its polymer content. Especially, the TSL material in which a cementitious component is included with relatively smaller polymer content shows a faster hardening characteristic which results in higher resistance to de-bonding between a TSL and a substrate. As a result, it is shown that the performance of TSLs might be dependent upon its corresponding polymer content.
Proceedings of the Korean Vacuum Society Conference
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2012.02a
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pp.431-432
/
2012
In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.
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