• Transactions of Materials Processing
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• v.5 no.1
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• pp.37-46
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• 1996

Superplastic forming/diffusion bonding (SPF/DB) processes were analyzed using a rigid visco-plastic finite element method. The optimum pressure-time relationship for a target strain rate and thickness distributions were predicted by two-node line elements based on the membrane approximation for plane strain. Material behavior during SPF/DB of the integral structures having complicated shapes was investigated. The tying condition is employed for the analysis of inter-sheet contact problems. A movement of rib structure is successfully predicted during the forming.

• International Journal of Highway Engineering
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• v.15 no.4
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• pp.85-94
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• 2013

PURPOSES: The performance of tack coat, commonly used for layer interface bonding, is affected by application rate and curing time. In this study, bonding strength tests were performed according to the application rate and curing time of asphalt emulsion. Based on finding from this study, optimum application rates and curing times are proposed. METHODS: In order to investigate bonding characteristic of asphalt emulsion, tests were performed on both asphalt concrete pavement and portland concrete pavement. Also, asphalt emulsions were tested at the application rate of 0, 0.2, 0.4, 0.6, and $0.8{\ell}/m^2$ and at the curing time of 0, 0.5, 1, 2, and 24 hours. Pull-off test and shear bonding strength test, which commonly used for bonding strength measurement of asphalt emulsion, were adopted for this study. To assess field performance under different testing condition, asphalt emulsions were applied to in-service pavement. Throughout coefficient of determination analysis between material index properties from asphalt emulsion and mechanical response from bonding strength tests, performance correlativity was analyzed. RESULTS: Test results show that optimum application rate for asphalt overlay on asphalt concrete pavement (AOA) and asphalt overlay on concrete pavement (AOC) was $0.4{\sim}0.5{\ell}/m^2$ and $0.3{\sim}0.5{\ell}/m^2$, respectively. According to the curing time increment, tensile strength and shear strength of AOC were increased to 22~44% and 20~39%, respectively. AOA case also show strength increment in tensile strength (42%) and shear strength (9%). We tested the applicability of tack coat materials at the field sites, and our findings demonstrated that the bonding (for D and E) and rapid curing (for B, C, and D, E) performances were superior than others. Among material index properties, there was a high correlation between penetration ratio and bonding strength test result. CONCLUSIONS : Result show that interlayer bonding strength was affected by asphalt emulsion type, application rate and curing time. AOC required slightly higher application ($0.1{\ell}/m^2$) than AOA. Both AOA and AOC cases show higher strength at longer curing time. Up to 2hours of curing, rapid strength increments were observed, but strength increment ratio was decreased after 2hours of curing. From the observed correlation between penetration ratio and bonding strength, it is expected that penetration ratio can be used as one of important factors affecting bonding strength analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.718-723
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• 2010

In this paper, the following results were obtained from the experiment in which electrification voltage of silicone rubber specimen for thermal bonding were measured under various time, temperature ($10{\sim}40^{\circ}C$), and humidity (30~90%) conditions and different amount of carbon additives (0~15 phr (per hundred resin)). Electrostatics electrification voltage decreased when carbon is up to 10 phr, and there was no electrification voltage in 15 phr condition. The electrostatics electrification voltage did not change over time. When the temperature was constant, electrostatics electrification voltage sharply dropped when the humidity was around 70%. That means, this condition might be appropriate for prevention of charging. The electrification voltage decreased as humidity and amount of carbon increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.779-784
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• 2001

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.81-84
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• 1995

A reliable bonding between two silicon wafers, regularly grooved and non-grooved, was done by the direct boning technology, It is Presented that high structural duality was realized not only at the bended interface but in the bulk, commensurate with the filling of artificial grooves, which would be attributed to the dislocation-gettering capability of groove free-surfaces during annealing. The groove filling would be explained with mass-transport phenomena assisted by the dislocation movement from initial contact boundaries toward groove surfaces. Intrinsic voids can be easily removed by aid of the grooves. The proposed method yielded also an intimate bonding not only between {111} wafers strongly misoriented and slightly inclined to {111} basal plane but even between {111} and {100} orientation wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.382-383
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• 2006

본 연구에서는 열처리 본딩장비를 실제로 개발하여 Al/Sus와 Al/Al의 두 재료를 서로 본딩 하였다. 열처리 본딩 실험을 하기 위해서 열처리시에 온도분포를 정확히 파악하기 위해서 컴퓨터모의실험으로 같은 재료인 Al/Al과 서로 다른 재료인 Al/Sus의 온도분포를 나타내었다. 본딩된 두 가지의 sample들을 FESEM으로 접합부의 표면조직 상태를 측정하였고 인장력측정 장치로 bonding strength를 측정하였다. 접착제를 사용한 본딩 sample 보다는 더 본딩 결합력이 크다는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.256-258
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• 2003

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.103-106
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• 1999

In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.815-819
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• 1998

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.