• Journal of Welding and Joining
• /
• v.13 no.4
• /
• pp.147-154
• /
• 1995

In order to study the bonding mechanism of Ni/B/Ni transient liquid phase bonding system, width of liquid layers were calculated, where in this system melting point of insert material(B) is higher than bonding temperature and melting point of base metal(Ni). Caclulated values were compared with experimental ones which were measured by bonding Ni/B/Ni system at 1433-1474K under vacuum atmosphere. As results, the width of initial liquid layer of Ni/B/Ni system was calculated as $W_{IL}$ = $W_{o}$[1 + {2.100..rho.$_{S/}$ ( $X_{3}$ + $X_{4}$)..rho.$_{Ni}$ }-.rho.$_{S/}$.rho. Ni/], and it was nearly same with experimental values. Maximum width of liquid layer, width of liquid layer during isothermal solidification and isothermal solidification time were calculated also.o.o.o.

• Journal of Welding and Joining
• /
• v.18 no.4
• /
• pp.96-103
• /
• 2000

This study investigated the effects of bonding temperature and bonding atmosphere on high temperature mechanical properties of transient liquid phase(TLP) bonded joints of heat resistant alloy using MBF-50 insert metal. Specimens were bonded at 1,423~1,468K for 600s. Microconstituents of {TEX}$Cr_{7}(C,B)_{3}${/TEX}were formed in the bonded region when the bonding temperature was low. The amount of microcostituents in the bonded layer decreased with increasing the bonding temperature, and the microconstituents in the bonded layer disappeared at the bonding temperature above 1,468K. The tensile strength of the joints at elevated temperatures increased with the increase the bonding temperature and was the same level as one of the base metal in the bonding temperature over 1,453K. Microstructure and alloying element distributions of the bonded region bonded in Ar and $N_2$atmosphere were similar to those of the bonded in vacuum. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of KSNVE
• /
• v.8 no.6
• /
• pp.1093-1102
• /
• 1998

The success of controllability of smart structures depends on the quality of the bonding along the interface between the main structure and the attached sensing and acuating elements. Generally, the analysis procedures neglect the effect of the interfacial bond layer or assume that this bond layer behaves like viscoelastic material. Three different bond layers. two modified epoxy adhesives, and one isocyanate adhesive were prepared for their toughness and moduli. Bond layer of the chosen adhesive provides an almost perfect bonding condition between the composite structure and the PZT while bended significantly like arrow-shape. The perfect bonding condition is tested by considering various material properties of the bond layers. and based on this perfect bonding condition, the effects of the interfacial bond layer on the dynamic behavior and controllability of the test structure is experimentally studied. Once the perfect bonding condition is achieved. dynamic effects of the bond layer itself on the dynamic characteristics of the main structure is negligible. but the contribution of the attached PZT elements on the stiffness of the multi-layered structure becomes significant when the thickness of the bond layer increased.

• Restorative Dentistry and Endodontics
• /
• v.24 no.1
• /
• pp.26-39
• /
• 1999

Bis-GMA, the representative monomer of bonding resin, contributes to the rigidity of bonding layer. Hydrophilic monomer contributes to the permeability into dentin substrates while weaken the bonding layer due to its small molecular weight. The degree of conversion also contributes to the ultimate strength of the bonding layer. This study was performed for the correlation analysis of monomer ratio and dentin bonding strength via degree of conversion. 7 experimental bonding resins were prepared with Bis-GMA, ratio from 20% to 80% by 10% increment, and hydrophilic HEMA monomer. Their degree of conversion and shear bond strength to dentin were compared with Scotchbond Multi-Purpose adhesive, and the fractured surfaces were examined microscopically. The results were as follows; 1. The degree of conversion increased when, the ratio of Bis-GMA increased from 20% to 70%, whereas it decreased when the ratio of Bis-GMA was 80%. 2. Shear bond strengths of the experimental bonding resins of 80%, 70%, 60% ratio of Bis-GMA were significantly higher than those of the experimental bonding resin of 50% ratio of Bis-GMA and Scotchbond Multi-Purpose adhesive. Lower shear bond strengths were obtained with the experimental bonding resins of 40%, 30%, 20% ratio of Bis-GMA (p<0.05). 3. Adhesive fractures were associated with the bonding resins of the lower bond strength, while cohesive fractures within the bonding resin layer were associated with the bonding resins of higher bond strength. Bonding resins with shear bond strength higher than 18MPa showed some cohesive fractures within the composite resin or within the dentin. 4. Correlations between Bis-GMA ratio and the degree of conversion (r=0.826), between Bis-GMA ratio and shear bond strength (r=0.853), and between the degree of conversion and shear bond strength (r=0.786) were significant (p<0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.411-414
• /
• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Proceedings of the KIEE Conference
• /
• 1998.07g
• /
• pp.2501-2503
• /
• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.890-893
• /
• 2001

Two-layer self bonding insulating tape consists of butyl rubber(IIR ; Isobutylene-isoprene rubber) adhesive layer and polyethylene protective film. Butyl rubber have inherent characteristics such as resistance to corrosion and water, low temperature flexibility, excellent electrical insulating properties also resistance to environmental effect such as ozone and ultraviolet. Polyethylene film was used for the purpose of good insulating properties and resistance to ozone and ultraviolet. The tape was manufactured using extrusion and calender method.

• Computers and Concrete
• /
• v.13 no.3
• /
• pp.411-421
• /
• 2014

A central pullout test was conducted to investigate the bonding properties between high strength rebar and reactive powder concrete (RPC), which covered ultimate pullout load, ultimate bonding stress, free end initial slip, free end slip at peak load, and load-slip curve characteristics. The effects of varying rebar buried length, thickness of protective layer and diameter of rebars on the bonding properties were studied, and how to determine the minimum thickness of protective layer and critical anchorage length was suggested according the test results. The results prove that: 1) Ultimate pull out load and free end initial slip load increases with increase in buried length, while ultimate bonding stress and slip corresponding to the peak load reduces. When buried length is increased from 3d to 4d(d is the diameter of rebar), after peak load, the load-slip curve descending segment declines faster, but later the load rises again exceeding the first peak load. When buried length reaches 5d, rebar pull fracture occurs. 2) As thickness of protective layer increases, the ultimate pull out load, ultimate bond stress, free end initial slip load and the slip corresponding to the peak load increase, and the descending section of the curve becomes gentle. The recommended minimum thickness of protective layer for plate type members should be the greater value between d and 10 mm, and for beams or columns the greater value between d and 15 mm. 3) Increasing the diameter of HRB500 rebars leads to a gentle slope in the descending segment of the pullout curve. 4) The bonding properties between high strength steel HRB500 and RPC is very good. The suggested buried length for test determining bonding strength between high strength rebars and RPC is 4d and a formula to calculate the critical anchorage length is established. The relationships between ultimate bonding stress and thickness of protective layer or the buried length was obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.10
• /
• pp.615-624
• /
• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.30 no.2
• /
• pp.263-271
• /
• 2003

The purpose of the present study was to evaluate the patterns of hybrid layer according to the application time and the frequency and its effects on the shear bonding strength of All-In-One system in primary teeth. A single bonding agent(Scotchbond Multi-Purpose Plus, 3M) and an All-In-One system(Prompt L-pop, 3M ESPE) were applied on the dentin varying the application time and the frequency in primary teeth. Shear bond strength was measured and the patterns of hybrid layers were observed by SEM. The following results were obtained ; 1. The shear bonding strength of single bonding agent was significantly higher than that of All-In-One system(P<0.05). 2. The shear bonding strength of All-In-One system applied twice or 3 times were higher than that of applied once (P<0.05). And thickness of the hybrid layer was increased when applied twice or 3 times compared to once. 3. The shear bonding strength of All-In-One system when applied for 15 second and 30 second were higher than that of 7 second (P<0.05). And the hybrid layer thickness of 15 second and 30 second's application time were higher than that of 7 second. 4. Thickness of hybrid layer applied with single bonding agent was $2-4{\mu}m$ and that of All-In-One system was $1-2{\mu}m$.