• Structural Engineering and Mechanics
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• 제84권6호
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• pp.799-811
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• 2022

Adhesive bonding has seen rapid development in recent years, with emphasis to composite patch repairing processes of geometric defects in aeronautical structures. However, its use is still limited given its low resistance to climatic conditions and requirement of specialized labor to avoid fabrication induced defects, such as air bubbles, cracks, and cavities. This work aims to numerically analyze, by the finite element method, the failure behavior of a damaged plate, in the form of a bonding defect, and repaired by an adhesively bonded composite patch. The position and size of the defect were studied. The results of the numerical analysis clearly showed that the position of the defect in the adhesive layer has a large effect on the value of J-Integral. The reduction in the value of J-Integral is also related to the composite stacking sequence which, according to the mechanical properties of the ply, provides better load transfer from the plate to the repair piece through the adhesive. In addition, the increase in the applied load significantly affects the value of the J-Integral at the crack tip in the presence of a bonding defect, even for small dimensions, by reducing the load transfer.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.135-142
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• 2024

Cu-Cu bonding, one of the key technologies in advanced packaging, enhances semiconductor chip performance, miniaturization, and energy efficiency by facilitating rapid data transfer and low power consumption. However, the quality of the interface bonding can significantly impact overall bond quality, necessitating strategies to quickly detect and classify in-process defects. This study presents a methodology for detecting defects in wafer junction areas from Scanning Acoustic Microscopy images using a ResNet-50 based deep learning model. Additionally, the use of the defect map is proposed to rapidly inspect and categorize defects occurring during the Cu-Cu bonding process, thereby improving yield and productivity in semiconductor manufacturing.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2009년도 춘계학술대회
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• pp.523-529
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• 2009

The ACF(Anisotropic Conductive Film) is used for bonding Drive IC and OLED display device panel. If ACF bonding process is problem, a malfunction of line defect can occur. Because electric resistance increase between the panel and drive IC after a period of time, drive IC can not supply enough current to the panel. This paper is studied on a method of test for line defect.

• Steel and Composite Structures
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• 제31권3호
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• pp.233-242
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• 2019

Early detection of damage bonding state such as insufficient bonding strength and interface partial contact defect for the explosive clad pipe is crucial in order to avoid sudden failure and even catastrophic accidents. A generalized and efficient model of the explosive clad pipe can reveal the relationship between bonding state and vibration characteristics, and provide foundations and priory knowledge for bonding state detection by signal processing technique. In this paper, the slender explosive clad pipe is regarded as two parallel elastic beams continuously joined by an elastic layer, and the elastic layer is capable to describe the non-uniform bonding state. By taking the characteristic beam modal functions as the admissible functions, the Rayleigh-Ritz method is employed to derive the dynamic model which enables one to consider inhomogeneous system and any boundary conditions. Then, the proposed model is validated by both numerical results and experiment. Parametric studies are carried out to investigate the effects of bonding strength and the length of partial contact defect on the natural frequency and forced response of the explosive clad pipe. A potential method for identifying the bonding quality of the explosive clad pipe is also discussed in this paper.

• Advances in aircraft and spacecraft science
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• 제11권1호
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• pp.83-103
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• 2024

Adhesive bonding is currently widely used in many industrial fields, particularly in the aeronautics sector. Despite its advantages over mechanical joints such as riveting and welding, adhesive bonding is mostly used for secondary structures due to its low peel strength; especially if it is simultaneously exposed to temperature and humidity; and often presence of bonding defects. In fact, during joint preparation, several types of defects can be introduced into the adhesive layer such as air bubbles, cavities, or cracks, which induce stress concentrations potentially leading to premature failure. Indeed, the presence of defects in the adhesive joint has a significant effect on adhesive stresses, which emphasizes the need for a good surface treatment. The research in this field is aimed at minimizing the stresses in the adhesive joint at its free edges by geometric modifications of the ovelapping part and/or by changing the nature of the substrates. In this study, the finite element method is used to describe the mechanical behavior of bonded joints. Thus, a three-dimensional model is made to analyze the effect of defects in the adhesive joint at areas of high stress concentrations. The analysis consists of estimating the different stresses in an adhesive joint between two 2024-T3 aluminum plates. Two types of single lap joints(SLJ) were analyzed: a standard SLJ and another modified by removing 0.2 mm of material from the thickness of one plate along the overlap length, taking into account several factors such as the applied load, shape, size and position of the defect. The obtained results clearly show that the presence of a bonding defect significantly affects stresses in the adhesive joint, which become important if the joint is subjected to a higher applied load. On the other hand, the geometric modification made to the plate considerably reduces the various stresses in the adhesive joint even in the presence of a bonding defect.

• Journal of Periodontal and Implant Science
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• 제32권4호
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• pp.753-767
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• 2002

The purpose of this study was to evaluate histologically the effect of LiF-maleic acid added calcium aluminate(LM-CA) bone cement & CA-PMMA composite bone cement on the healing of calvarial defect in Sprague-Dawley rats. The critical size defects were surgically produced in the calvarial bone using the 8mm trephine bur. The rats were divided in three groups : In the control group, nothing was applied into the defect of each rat. LM-CA bone cement was implanted in the experimental group 1 and CA-PMMA composite bone cement was implanted in the experimental group 2. Rats were sacrificed at 2, 8 weeks after surgical procedure. The specimens were examined by histologic analysis, especially about the bone-cement interface and the response of surrounding tissue. The results are as follows; 1. In the control group, inflammatory infiltration was observed at 2 weeks. At 8 weeks, periosteum and duramater were continuously joined together in the defect area. But the center of defect area was filled up with the loose connective tissue. 2. In the experimental group 1, the bonding between implanted bone cement and the existing bone was seen, which more increased in 8 weeks than 2 weeks. Inflammatory infiltration and the dispersion of implanted bone cement particles were seen in both 2 weeks and 8 weeks. 3. In the experimental group 2, implanted bone itself had a dimensional stability and no bonding between implanted bone cement and the existing bone was seen in both 2 weeks and 8 weeks. Implanted bone cement was encapsulated by fibrous connective tissue. In addition, inflammatory infiltration was seen around implanted bone cement. On the basis of these results, when LM-CA bone cement or CA-PMMA composite bone cement was implanted in rat calvarial defect, LM-CA bone cement can be used as a bioactive bone graft material due to ability of bonding to the existing bone and CA-PMMA can be used as a graft material for augmentation of bone-volume due to dimensional stability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

• Nuclear Engineering and Technology
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• 제34권3호
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• 마이크로전자및패키징학회지
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• 제16권1호
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• pp.27-31
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• 2009

본 논문에서는 웨이퍼 레벨 기술을 이용한 CIS용 폴리머 접합 기술을 연구하고 접합 후의 warpage 분석과 개별 패키지의 신뢰성 테스트를 수행하였다. 균일한 접합 높이를 유지하기 위하여 glass 웨이퍼 상에 dam을 형성하고 접합용 폴리머 층을 patterning하여 Si과 glass 웨이퍼의 접합 테스트를 수행하였다. Si 웨이퍼의 접합온도, 접합 압력 그리고 접합 층이 낮을수록 warpage 결과가 감소하였으며 접합시간과 승온 시간이 짧을수록 warpage 결과가 증가하는 것을 확인하였다. 접합 된 웨이퍼를 dicing 하여 각 개별 칩 단위로 TC, HTC, Humidity soak의 신뢰성 테스트를 수행하였으며 warpage 결과가 패키지의 신뢰성 결과에 미치는 영향은 미비한 것으로 확인되었다.