• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 춘계학술대회 논문집 전력기술부문
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• 전기학회논문지
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• 제65권1호
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• 제어로봇시스템학회논문지
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• 제20권7호
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• pp.756-759
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• 2014

DC/DC converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. The converters can be applied in the regenerative braking of DC motors to return energy back to the supply, resulting in energy savings for the systems at periodic intervals. The fundamental converter studied here consists of an IGBT (Insulated Gate Bipolar mode Transistor), an inductor, a capacitor, a diode, a PWM-IC (Pulse Width Modulation Integrated Circuit) controller with oscillator, amplifier, and comparator. The PWM-IC is a core element and delivers the switching waveform to the gate of the IGBT in a stable manner. Display of the DC/DC converter output depends on the IGBT's changes in the threshold voltage and PWM-IC's pulse width. The simulation was conducted by PSIM software, and the hardware of the DC/DC converter was also implemented. It is necessary to study the fact that the output voltage depends on the duty rate of D, and to compare the output of experimental result with the theory and the simulation.

• 대한전자공학회논문지
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• 제14권5호
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• pp.7-14
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• 1977

주로 TWT로 사용되어 오던 2GHz 대 고출력증식기를 근래 개발되어 시판되기 시작한 microwave bipolar transistor를 사용하여 설계 제작하였다. 특히 고출력을 얻을 목적으로 balanced amplifier로 구성하였으며 microstripline을 사용해서 우수한 impedance정합효과를 얻었다. RF출력의 divider 및 combiner로서는 제작상의 편의를 감안해서 stripline directional coupler방식을 채택했으며 이것은 quadrature hybrid coupler로서 좋은 동작특성을 보였다. 직접 실용화를 감안해서 설계, 시작된 본 마이크로파 트랜지스터 증폭기는 측정결과 RF출력 14watt, 이득 14dB, 편파수대역폭 180MHz, 효율 40%의 우수한 종합특성을 얻었다.

• 전기저널
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• 통권277호
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• pp.63-68
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• 2000

요 몇 해 사이에 고내압$\cdot$대용량 파워디바이스에서는 아주 새로운 진전이 일어나고 있다. 파워일렉트로닉스 장치의 소형화$\cdot$고효율화 및 제어의 고속화 등의 요구에 응할 수 있는 차세대의 새로운 소자가 출현하여 그 제품화가 비약적으로 진전되고 있는 것이다. 새로운 파워디바이스의 대표적인 것으로는 다음의 3가지를 들 수 있다. $\cdot$HVIGBT(High Voltage Insulated Gate Bipolar Transistor Module)$\cdot$HVIPM(High Voltage Intelligent Power Module)$\cdot$GCT(Gate Commutated Turn-off)사이리스터 이들의 파워디바이스를 종래의 GTO(Gate Turn-off) 사이리스터와 비교해 보면 다음과 같은 특징이 있다.(1)GTO 사이리스터가 필요로 했던 스나버회로가 없어도(Snabber-less)턴오프가 가능하며, di/dt 억제용 아노드리액터의 생략 또는 저감이 가능하기 때문에 반도체 부녀회로의 소형화를 기할 수 있다. (2)게이트파워와 전체손실(소자 및 주변회로를 포함)의 저감으로 에너지 절약을 도모할 수 있다. (3)스위칭주파수를 2$\~$3kHz 정도까지 높일 수 있다. 이런 장점 때문에 다음과 같은 용도에의 적용이 기대되고 있다. (1)신간선, 지하철 등의 전철 응용 (2)액티브필터, SVG(무효전력발생장치), SVC(무효전력보상장치) BTB, 가변속 양수발전 스위치 등의 전력응용 (3) 철강압연이나 제지공장용 등의 대용량공업용 컨버터$\cdot$인버터 응용 HVIGBT와 HVIPM은 전철분야에서 신간선의 추진용 컨버터$\cdot$인버터장치와 보조전원장치, 그리고 지하철의 추진용 인버터 장치나 보조전원장치 등에 채용되고 GCT 사이리스터는 전력용 주파수변환기 등에 실용화되고 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.634-637
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• 1997

This paper is on the research and development of new SIV(Static Inverter) using IGBT(Insulated Gate Bipolar Transistor) semiconductor for a wide range of electric railway applications. For the simplification and higher controllability, the direct PWM control method with 3level inverter topology was adopted. In the new SIV system, the cost as well as bulk and weight was appreciably reduced about 40% lower than those of conventional SIV, the electrical efficiency was increased above 95% and the audible noise level was less than 65dB. In addition, the THD(Total Harmonic Distortion) factor was below 5% and the voltage fluctuation on a transient state was below 10%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1605-1606
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• 2015

전기철도차량은 매 순간마다 이동하는 대용량 단상부하로, 전력계통 측면에서 부하의 특성이나, 계통구성의 형태 및 제반현상이 일반 3상 전력계통과 상이한 특성을 지닌다. 이와 같이 3상 전력계통으로 부터 단상 교류로 변환하여 전기차를 운행하는 경우에는 3상 전원측 PCC(Point of Common Coupling)에 불평형을 일으켜, 역상전류를 발생시킨다. 현재는 이를 최소화하기 위해서 종래부터 사용 되어온 스코트 결선 변압기를 사용하고 있다. 하지만 특성상 두 개의 단상 시스템에 걸리는 부하량 및 역율이 동일하지 않을 경우 여전히 3상 전압불평형이 발생된다. 이에 대한 근본적인 대책으로는 급전시스템 재구성 또는 전력 설비 증설 및 보상장치의 적용을 들 수 있으나, 최근에는 전력전자 기술의 발달로 IGBT(Insulated Gate Bipolar Transistor) 소자를 이용한 BTB(Back To Back) 방식의 컨버터를 활용한 사례가 연구되고 있다. 본 논문에서는 전력계통과 전기철도의 연계 목적으로 3상-단상 BTB 모듈형 멀티레벨 컨버터 (Modular Multi-level Conveter, MMC)를 이용한 전기철도 급전 시스템의 기본구조를 제안하고, Mathworks사의 MATLAB Simulink tool를 이용하여 시뮬레이션을 통해 MMC시스템을 검토하고자 한다.

• Journal of Power Electronics
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• 제16권2호
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• Journal of Power Electronics
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• 제16권2호
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• pp.553-563
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• 2016

This paper presents a digital hardware implementation of a real-time simulator for a multiphase drive using a field-programmable gate array (FPGA) device. The simulator was developed with a modular and hierarchical design using very high-speed integrated circuit hardware description language (VHDL). Hence, this simulator is flexible and portable. A state-space representation model suitable for FPGA implementations was proposed for a dual three-phase induction machine (DTPIM). The simulator also models a two-level 12-pulse insulated-gate bipolar transistor (IGBT)-based voltage-source converter (VSC), a pulse-width modulation scheme, and a measurement system. Real-time simulation outputs (stator currents and rotor speed) were validated under steady-state and transient conditions using as reference an experimental test bench based on a DTPIM with 15 kW-rated power. The accuracy of the proposed digital hardware implementation was evaluated according to the simulation and experimental results. Finally, statistical performance parameters were provided to analyze the efficiency of the proposed DTPIM hardware implementation method.