• Journal of IKEEE
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• v.15 no.2
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• pp.164-170
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• 2011

In this paper, we present a novel Lateral Insulated-Gate Bipolar Transistor(LIGBT) structure. The proposed structure has extra emitter between emitter and collector of the conventional structure. The added emitter can significantly improve latch-up current densities, forward voltage drop (Vce,sat) and turn-off characteristics. From the simulation results, the proposed LIGBT has the lower forward voltage drop(1.05V), the higher latch-up current densities($2.5{\times}10^3\;A/{\mu}m^2$), and the shorter turn-off time(7.4us) than those of the conventional LIGBT.

• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.211-218
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• 2009

This paper presents a voltage and frequency controller (VFC) for a 4-wire stand-alone wind energy conversion system (WECS) employing an asynchronous generator. The proposed VF con-troller consists of a three leg IGBT (Insulated Gate Bipolar Junction Transistor) based voltage source converter and a battery at its DC bus. The neutral terminal for the consumer loads is created using a T-connected transformer, which consists of only two single phase transformers. The control algorithm of the VF controller is developed for the bidirectional flow capability of the active power and reactive power control by which it controls the WECS voltage and frequency under different dynamic conditions, such as varying consumer loads and varying wind speeds. The WECS is modeled and simulated in MATLAB using Simulink and PSB toolboxes. Extensive results are presented to demonstrate the capability of the VF controller as a harmonic eliminator, a load balancer, a neutral current compensator as well as a voltage and frequency controller.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2707-2712
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• 2011

In this paper, a power factor correction (PFC) control circuit using single stage boundary conduction mode(BCM) for the 400V. 120W LED drive application has been designed. The proposed control circuit is aimed for improvement of the power factor correction and reduction of the total harmonic distortion. In this circuit, a new CMOS multiplier structure is used instead of a conventional BJT(bipolar junction transistor) based multiplier where has a relatively large area. The CMOS multiplier can bring 30 % reduced chip area, competitive die cost in comparison with the conventional BJT multiplier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of Power Electronics
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• v.18 no.2
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• pp.395-406
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• 2018

Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.107-116
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• 2012

In this paper, the trade-off related to bandwidth of high-speed common-mode logic frequency divider is analyzed in detail. A method to optimize the operating frequency, band-width as well as power consumption is proposed. This method is based on bipolar device characteristics, whereby a negative resistance model can be used to estimate the optimal normalized upper frequency and lower frequency of frequency dividers under different conditions, which is conventionally ignored in literatures. This method provides a simple but efficient procedure in designing high performance frequency dividers for different applications. To verify the proposed method, a static divide-by-2 at millimeter wave ranges is implemented in 180 nm SiGe technology. Measurement results of the divider demonstrate significant improvement in the figure of merit as compared with literatures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.737-746
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• 2009

In this study, we have developed one chip system IC for preventing the overload, detecting an abnormal conditions, and controlling the fire prevention in the intelligent home appliances. For the purpose, a circuit detectable an electric leak for preventing an electric shock, and a circuit detectable arc that has effect directly on the fire are designed. The circuits designed on every block are verified by comparing simulation with bread-boarding using a standard transistors. The system IC is fabricated by using 34 V 2 metal $1.5{\mu}m$ bipolar transistor process from evaluation results. The electrical performances of IC application circuits and the system IC equipped on PCB board are evaluated. It is confirmed that the system IC is well operated for arc and ground fault(GF) signal.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.2
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• pp.184-191
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• 2015

As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter. Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristic curve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layers with convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink$^{(R)}$ environment, the dynamic model is validated with experiment. Results showed that the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.