• The Bulletin of The Korean Astronomical Society
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• v.38 no.2
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• pp.65.1-65.1
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• 2013

Our understanding of how brown dwarfs form is limited by observational evidence. We report identification of a L328-IRS as a proto-brown dwarf embedded in an isolated dense molecular core. This source exhibits typical properties of a protostar, however, its luminosity (~0.05 $L{\odot}$) is far below than expected from the least massive protostar by the standard star formation theory. The most likely mass accretion rate (~2.4 10-7 $M{\odot}$ yr-1) inferred from its small bipolar outflow is an order of magnitude less than the canonical value for a protostar. The mass available in its envelope is less than 0.1 $M{\odot}$. These points suggest that L328-IRS will accrete the mass of a brown dwarf, but not that of a star. L328 is found to be fairly well isolated from other nearby clouds and seems to be forming three sub-cores simultaneously through a gravitational fragmentation process. Altogether with these, our direct detection of inward motions in L328 which harbors this proto-brown dwarf clearly supports the idea that a brown dwarf forms like a normal star.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.4
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• pp.288-297
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• 2009

A serpentine channel geometry often used in a fuel cell has a strong pressure gradient between adjacent channels in specific regions. The pressure gradient helps some amount of reactant gas penetrate through a gas diffusion layer(GDL). As a result, the overall serpentine flow structure is slightly different from the intention of a designer. The purpose of this paper is to examine the effect of serpentine flow structure on current density distribution. By using a commercial code, STAR-CD, a numerical simulation is performed to analyze the fuel cell with high aspect ratio of active area. To increase the accuracy of the numerical simulation, GDL permeabilities are measured with various compressive forces. Three-dimensional flow field and current density distribution are calculated. For the verification of the numerical simulation results, water condensation process in the cathode channel is observed through a transparent bipolar plate. The result of this study shows that the region of relatively low current density corresponds that of dropwise condensation in cathode channels.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.737-746
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• 2009

In this study, we have developed one chip system IC for preventing the overload, detecting an abnormal conditions, and controlling the fire prevention in the intelligent home appliances. For the purpose, a circuit detectable an electric leak for preventing an electric shock, and a circuit detectable arc that has effect directly on the fire are designed. The circuits designed on every block are verified by comparing simulation with bread-boarding using a standard transistors. The system IC is fabricated by using 34 V 2 metal $1.5{\mu}m$ bipolar transistor process from evaluation results. The electrical performances of IC application circuits and the system IC equipped on PCB board are evaluated. It is confirmed that the system IC is well operated for arc and ground fault(GF) signal.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.236-242
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• 1999

J noise component due to base spreading resistance ${\gamma}_{bb}$ of bipolar junction transistors fabricated by BiCMOS process is experimentally analyzed. The analysis of equivalent noise circuit for common collector shows that output 1/f noise value is purely generated from ${\gamma}_{bb}\;when\;g_m^{-1}-{\gamma}_{bb}-R_B$ is closely to zero. From the $S^{1/f}_{Irbb}=K_fI_b{^{A_1}}/f$, we fine that $A_f=2,\;K_f{\simeq}5{\times}10^{-9}$. And Hooge constant ${\alpha}$ values are in the order, of 10$^{-3}$.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.147-151
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• 2007

A serpentine channel geometry often used in a polymer electrolyte membrane fuel cell has a strong pressure gradient between adjacent channels in specific regions. The pressure gradient helps some amount of reactant gas penetrate through a gas diffusion layer(GDL). As a result, the overall serpentine flow structure is slightly different from intention of a designer. The purpose of this paper is to examine the effect of serpentine flow structure on current density distribution. By using a commercial code, STAR-CD, a numerical simulation is performed to analyze the fuel cell with relatively high aspect ratio active area. To increase the accuracy of the numerical simulation, GDL permeabilities are measured with various compression conditions. Three-dimensional flow field and current density distribution are calculated. For the verification of the numerical simulation results, water condensation process in the cathode channel is observed through a transparent bipolar plate. The result of this study shows that the region of relatively low current density corresponds to that of dropwise condensation in cathode channels.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.63.4-64
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• 2018

High resolution spectroscopy of the yellow symbiotic star AG Draconis is performed with the Canada-France-Hawaii Telescope to analyse the line profiles of Raman scattered O VI broad emission features at $6825{\AA}$ and $7082{\AA}$ with a view to investigating the wind accretion process from the mass losing giant to the white dwarf. These two spectral features are formed through inelastic scattering of O $VI{\lambda}{\lambda}32$ and 1038 with atomic hydrogen. We find that these features exhibit double-component profiles with red parts stronger than blue ones with the velocity separation of ~ 60 km s-1 in the O VI velocity space. Monte Carlo simulations for O VI line radiative transfer are performed by assuming that the O VI emission region constitutes a part of the accretion flow around the white dwarf and that Raman O VI features are formed in the neutral part of the slow stellar wind from the giant companion. The overall Raman O VI profiles are reasonably fit with an azimuthally asymmetric accretion flow and the mass loss rate ~ 4 ${\times}$ 10^{-7} M_sun yr^{-1}. We also find that additional bipolar neutral regions moving away with a speed ~ 70 km s^{-1} in the directions perpendicular to the orbital plane provide considerably improved fit to the red wing parts of Raman features.

• Journal of Korea Foundry Society
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• v.32 no.1
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• pp.24-31
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• 2012

In this study, semi-solid thin plate of A 356 aluminum alloy was fabricated by using slope plate apparatus and vacuum pressurization. Slope plate was used to produce semi-solid material with spheroidal microstructures. After molten metal was poured into the slope plate connected to the pouring hole of die, semi-solid material flowed into the die cavity by vacuum degree. The primary crystals of the cast metal became spheroidal. In order to increase the working pressure, gas pressurization of U shape was designed for fabrication of thin plate. For 3 bar of gas pressure and 60 mmHg of vacuum degree, thin plate was fabricated without defects on surface.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.