• 대한전자공학회논문지
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• 제24권4호
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• pp.618-624
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• 1987

This paper describes the design and fabrication of a signal processing integrated circuit required for the recording and playback of VTR audio signal. The integrated circuit was designed using 8\ulcorner design rule and its chip size is 2.5x2.5mm\ulcorner It was fabricated using SST bipolar standard process technology. The measurement analysis of the fabricated circuit proves the satisfactory DC characteristics and its proper audio signal processing funcstion.

• ETRI Journal
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• 제27권4호
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• pp.453-456
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• 2005

The ultra-wideband (UWB) signal radiation process in an antenna is different from that of a narrowband signal. In this paper, we study the degradation of the desired signal component according to the antenna structure and location of a receiver in a bipolar time-hopping UWB system. And we propose a receiver structure with an adaptive template waveform generator to compensate for the degradation caused by a realistic TX-RX antenna system.

• 전자공학회논문지A
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• 제30A권6호
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• pp.22-30
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• 1993

An integrated silicon pressure sensor with frequency output has been fabricated, measured, and tested. The standard bipolar process is applied and thin diaphragm was formed using EDP anisotropic etchant. Output frequency was 769 Hz-3.1 kHz at the pressure range of 0-10 psi. It operates at the temperature range of 0-50$^{\circ}C$. The frequency sensitivity was 233 Hz/psi and temperature sensitivity was 0.3 Hz/$^{\circ}C$. The power dissipation was 50mW.

• ETRI Journal
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• 제27권1호
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• pp.75-80
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• 2005

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• Journal of Electrical Engineering and Technology
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• 제10권5호
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• pp.2089-2098
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• 2015

With the continuous development in insulation of electrical equipment design, the reliability of the system has been enhanced. However, in the manufacturing process and during operation under continues stresses introduce local defects, such as voids between interfaces that can responsible to occurrence of partial discharge (PD), electric field distortion and accumulation of charges. These defects may lead to localize corrosion and material degradation of insulation system, and a serious threat to the equipment. A model of three layers of PI film with air gap is presented to understand the influence of interface and voids on exploitation conditions such as strong electrical field, PD activity and charge movement. The analytical analysis, and experimental results are good agreement and show that the lose contact between interfaces accumulate more residual charges and in consequences increase the electric field intensity and accelerates internal discharges. These residual charges are trapped charges, injected by the electrodes has often same polarity, so the electric field in cavities increases significantly and thus partial discharge inception voltage (PDIV) decreases. Contrary, number of PD discharge quantity increases due to interface. Interfacial polarization effect has opposite impact on electric field and PDIV as compare to void.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.516-521
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• 2013

This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.