• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.743-751
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• 1991

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.2
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• pp.136-141
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• 2002

The electrical characteristics of solid state devices such as BJT(Bipolar Junction Transistor) and MOSFET, etc, are altered by impinging nuclear radiation and temperature in the space environment. This phenomenon is well known and has been studied extensively since the early 1960's when satellites were first being designed and used in the United States. However, the studies and the developments of radiation hardening technologies for the electronic components at the industrial fields in our country has not been popular so far. The worst case design technology in the electrical circuit is required for the appropriate operation of solid state devices in the space environment. In this paper, the interface circuit used in KOMPSAT(Korea Multipurpose Satellite), which is now being operated since the one was launched in 1999, is optimally designed to accomodate the worst case design and radiation effect.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.125-130
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• 2009

This paper reviews the characteristics technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.62-64
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• 2004

초고속 RF IC의 핵심소자인 SiGe에피텍시층을 가진 이종양극트란지스터 (hetero junction bipolar transistor: HBT)를 0.35um급 CMOS공정으로 제작하였다. 이때 IOW $V_{BE}$영역에서의 Current Gain의 선형성을 향상시키기 위하여 Capping 실리콘의 두께를 200과 300${\AA}$으로 나누고 EDR (Emitter Drive-in RTA)의 온도와 시간을 900$\~$1000C, 0$\~$30sec로 각각 변화시키면서 최적조건을 알아보았다. 실험범위 내에서의 최적공정조건은 300${\AA}$의 capping 실리콘과 975C-30sec의 EDR조건이었다.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.137-140
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• 2002

The algorithm for calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.1
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• pp.9-17
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• 2022

The series-connected semiconductor devices structure is one way to achieve a high voltage rating. However, a problem with voltage imbalance exists in which different voltages are applied to the series-connected switches. This paper proposed a new voltage balancing technique that controls the turn-off delay time of the switch by adding one bipolar junction transistor to the gate turn-off path. The validity of the proposed method is proved through simulation and experiment. The proposed active gate driver not only enables voltage balancing across a variety of current ranges but also has a greater voltage balancing performance compared with conventional RC snubber methods.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.897-903
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• 2011

This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.211-218
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• 2009

This paper presents a voltage and frequency controller (VFC) for a 4-wire stand-alone wind energy conversion system (WECS) employing an asynchronous generator. The proposed VF con-troller consists of a three leg IGBT (Insulated Gate Bipolar Junction Transistor) based voltage source converter and a battery at its DC bus. The neutral terminal for the consumer loads is created using a T-connected transformer, which consists of only two single phase transformers. The control algorithm of the VF controller is developed for the bidirectional flow capability of the active power and reactive power control by which it controls the WECS voltage and frequency under different dynamic conditions, such as varying consumer loads and varying wind speeds. The WECS is modeled and simulated in MATLAB using Simulink and PSB toolboxes. Extensive results are presented to demonstrate the capability of the VF controller as a harmonic eliminator, a load balancer, a neutral current compensator as well as a voltage and frequency controller.