• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.579-587
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• 2014

This paper presents a variable gain amplifier (VGA) for an analog front-end (AFE) of ultrasound medical imaging. This VGA has a closed-loop topology and shows a 37-dB-linear characteristic with a single-stage amplifier. It consists of an op-amp, a non-binary-weighted capacitor array, and a gain-control block. This non-binary-weighted capacitor array reduces the required number of capacitors and the complexity of the gain-control block. The VGA has been fabricated in a 0.35-mm CMOS process. This work gives the largest gain range of 37 dB per stage, the largest P1 dB of 9.5 dBm at the 3.3-V among the recent VGA circuits available in the literature. The voltage gain is controlled in the range of [-10, 27] dB in a linear-in-dB scale with 16 steps by a 4-bit digital code. The VGA has a bandpass characteristic with a passband of [20 kHz, 8 MHz].

• 대한전자공학회논문지SD
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• 제40권9호
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• pp.685-691
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• 2003

본 논문에서는 고속 통신 시스템 응용을 위한 12b 100 MS/s CMOS D/A 변환기(DAC) 회로를 제안한다. 제안하는 DAC는 전력소모, 면적, 선형성 및 글리치 에너지 등을 고려하여, 상위 8b는 단위 전류셀 매트릭스 (unit current-cell matrix)로 나머지 하위 4b는 이진 전류열 (binary-weighted array)로 구성하였다. 제안하는 DAC는 동적 성능을 향상시키기 위해 새로운 구조의 스위치 구동 회로를 사용하였다. 시제품 DAC회로 레이아웃을 위해서는 캐스코드 전류원을 단위 전류셀 스위치 매트릭스와 분리하였으며, 제안하는 칩은 0.35 um single-poly quad-metal CMOS 공정을 사용하여 제작되었다. 측정된 시제품의 DNL 및 INL은 12b 해상도에서 각각 ±0.75 LSB와 ±1.73 LSB이내의 수준이며, 100 MS/s 동작 주파수와 10 MHz 입력 주파수에서 64 dB의 SFDR을 보여준다. 전력 소모는 3 V의 전원 전압에서 91 mW이며, 칩 전체 크기는 2.2 mm × 2.0 mm 이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권4호
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• pp.211-216
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

• 한국전자통신학회논문지
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• 제16권3호
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• pp.407-416
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• 2021

능동위상배열안테나는 적절한 급전신호 가중치 선택에 따라 대국을 향해 주 빔을 조향할 수 있을 뿐만 아니라 간섭원 방향으로 패턴 널을 형성할 수 있다. 주 빔의 조향을 위한 급전신호 가중치는 방사소자의 위치를 기반으로 쉽게 산출할 수 있다. 그리고 패턴 널 형성을 위한 급전신호 가중치 또한 적절한 요구 방사패턴 설정과 WLSM(Weighted Least Squares Method)을 이용하면 산출할 수 있다. 그러나 일반적인 무선 통신망 환경에서 간섭원의 위치는 미인지 상황에 있다. 따라서 적응형 패턴 널 형성 기법이 필요하다. 본 논문에서는 요구 방사특성 설정에 따른 패턴 널 형성이 가능함을 확인하고, 이를 기반으로 관측 영역 기준 이진탐색 알고리즘을 이용하여 간섭원 적응형 패턴 널 형성 기법에 관하여 연구하였다. 제시된 기법을 기반으로 모의실험을 수행한 결과, 효율적으로 간섭 적응형 패턴 널 형성이 가능함을 확인하였다.

• 전자공학회논문지A
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• 제32A권12호
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• pp.220-228
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• 1995

An optimized 4-stage 12-bit pipelined CMOS analog-to-digital converter (ADC) architecture is proposed to obtain high linearity and high yield. The ADC based on a multiplying digital-to-analog converter (MDAC) selectively employs a binary-weighted-capacitor (BWC) array in the front-end stage and a unit-capacitor (UC) array in the back-end stages to improve integral nonlinearity (INL) and differential nonlinearity (DNL) simultaneously whil maintaining high yield. A digital-domain nonlinear error calibration technique is applied in the first stage of the ADC to improve its accuracy to 12-bit level. The largest DNL error in the mid-point code of the ADC is reduced by avoiding a code-error symmetry observed in a conventional digitally calibrated ADC is reduced by avoiding a code-error symmetry observed in a conventional digitally calibrated ADC is simulated to prove the effectiveness of the proposed ADC architecture.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.44-48
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• 2009

A simulation study of a 10-bit two-stage DAC was done by using a conventional current switch cell. The DAC adopts the segmented architecture in order to reduce the circuit complexity and the die area. The 10-bit CMOS DAC was designed in 2 blocks, a unary cell matrix for 6 MSBs and a binary weighted array for 4 LSBs, for fabrication in a 0.35-${\mu}m$ CMOS process. To cancel the accumulation of errors in each current cell, a symmetrical switching sequence is applied in the unary cell matrix for 6 MSBs. To ensure high-speed operation, a decoding circuit with one stage latch and a cascode current source were developed. Simulations show that the maximum power consumption of the 10-bit DAC is 74 mW with a sampling frequency of 100 MHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.201-204
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• 2000

In this paper, an A/D converter is implemented to obtain 8bit resolution at a conversion rate of 10Msample/s. This architecture is proposed using the 2-step architecture for high speed conversion rate. It is consisted of sample/hold circuit, low power comparator, voltage reference circuit and DAC of binary weighted capacitor array. Proposed A/D converter is designed using 0.2$\mu\textrm{m}$ CMOS technology. The SNR is 45.3dB at a sampling rate of 10MHz with 1.95MHz sine input signal. When an 8bit 10Msample/s A/D converter is simulated, the Differential Nonlinearity / Integral Nonlinearity (DNL/ INL) error are ${\pm}$1 / ${\pm}$2 LSB, respectively. The power consumption is 13㎽ at single +2.5V supply voltage.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.263-266
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• 1999

In this work, a A/D converter is implemented to obtain 8bit resolution at a conversion rate of 10MS/s for video applications. This architecture is proposed using the Pipelined architecture for high speed conversion rate and the Successive - Approximation architecture for low power consumption, and consists of two identical stages that consist of sample/hold circuit, low power comparator, voltage reference circuit and MDAC of binary weighted capacitor array. Proposed A/D converter is designed using 0.25${\mu}{\textrm}{m}$ CMOS technology The SNR is 80㏈ at a sampling rate of 10MHz with 1.95MHz sine input signal. When an 8bit 10MS/s A/D converter is simulated, the Differential Nonlinearity / Integral Nonlinearity (DNL/ INL) error are $\pm$0.5 / $\pm$2 LSB, respectively. The power consumption is 13㎽ at 10MS/s.

• 대한전자공학회논문지
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• 제22권5호
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• pp.57-61
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• 1985

The e(lect of capacitance error on the A/D conversion accuracy in the A/D converter using binary-weighted capacitor array was scruntized. Besides the Monte-Carlo method considering the inter-capacitance ratios as random variables, " correlation approach" con-sidering the correlation coefficient between capacitances is proposed in this paper. Bt was observed by the measurement of capacitances of monolithic MO5 capacitors that the correla-tion coefficient between capacitors decreases as the capacitor size incrrases. It was also verified that the parallel connection of unit capacitors and the common centroid layout scheme signi(icantly increase the inter-capacitance correlation coefficients.

• 한국음향학회:학술대회논문집
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• 한국음향학회 1999년도 학술발표대회 논문집 제18권 2호
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• pp.173-176
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• 1999

In this work, a A/D converter is implemented to obtain 8bit resolution at a conversion rate of 10Msample/s for video applications. Proposed architecture is designed low power A/D converter that pipelined architecture consists of flash A/D converter. This architecture consists of two identical stages that consist of sample/hold circuit, low power comparator, voltage reference circuit and MDAC of binary weighted capacitor array. Proposed A/D converter is designed using $0.25{\mu}m$ CMOS technology The SNR is 76.3dB at a sampling rate of 10MHz with 3.9MHz sine input signal. When an 8bit 10Msample/s A/D converter is simulated, the Differential Nonlinearity / Integral Nonlinearity (DNL/ INL) error are ${\pm}0.5/{\pm}2$ LSB, respectively. The power consumption is 13mW at 10Msample/s.