• 한국세라믹학회지
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• 제36권6호
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• 한국세라믹학회지
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• 제33권9호
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• pp.1012-1018
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• 1996

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.86-90
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• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

• 한국표면공학회지
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• 제35권2호
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• 한국재료학회지
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• 제23권9호
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• pp.495-500
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• 2013

Mo-based thin films are frequently used as back electrode materials because of their low resistivity and high crystallinity in CIGS chalcopyrite solar cells. Mo:Na/Mo bilayer thin films with $1{\mu}m$ thickness were deposited on soda lime glass by varying the thickness of each layer using dc-magnetron sputtering. The effects of the Mo:Na layer on morphology and electrical property in terms of resistivity were systematically investigated. The resistivity increased from $159{\mu}{\Omega}cm$ to $944{\mu}{\Omega}cm$; this seemed to be caused by increased surface defects and low crystallinity as the thickness of Mo:Na layer increased from 100 nm to 500 nm. The surface morphologies of the Mo thin films changed from a somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries as the thickness of Mo:Na layer increased. Na contents varied drastically from 0.03 % to 0.52 % according to the variation of Mo:Na layer thickness. The change in Na content may be ascribed to changes in surface morphology and crystallinity of the thin films.

• 한국결정학회지
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• 제6권2호
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• pp.134-140
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• 1995

Glass/SiNx/ZnO 적층 박막구조의 SAW 특성 변화를 분석하였다. ZnO 박막은 rf magnetron sputter를 이용하여, 산소를 반응성 가스로 Ar과 함께 진공챔버내에 주입시켜 증착하였고, 주로 산소량에 따른 박막의 특성변화를 관찰하였다. 산소분압은 ZnO 박막의 증착속도 및 결정성에 많은 영향을 주고 있었으며, rocking curve의 결과에 의하면 (002) 배향성을 가진 ZnO 박막의 c-축 수직도가 Ar과 산소의 유량비가 67/33에서 가장 좋은 2.17도를 보여주고 있다. 이 값은 ZnO 박막을 압전요소로 사용하기에 충분한 조건이다. SiNx의 두께를 7000Å, ZnO 박막의 두께를 5μm로 한 glass/SiNx/Al/ZnO의 박막 적층 구조의 SAW 특성을 보면 ZnO/glass 구조와 비교시 SAW 속도가 최대 2.2%까지 증가했음을 알 수 있었다.

• Journal of Magnetics
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• 제4권3호
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• pp.88-91
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• 1999

A series of NiO/NiFe bilayer films are deposited with the variation of Ar sputtering pressure for the NiO layers only. As the pressure for the NiO layers increases, the exchange anisotropy field (HEX) decreases gradually and becomes extinct at 2.5 mTorr, at which the maximum coercive force (HC) in the NiO/NiFe films is obtained. Randomly oriented columnar structures with HEX a few tens of Oe and oriented columnar structures with zero HEX are observed in the NiP layers by highvoltage hihg-resolution transmission electron microscopy. The vanishing of the HEX in the oriented structures is attributed to the lack of exchange anisotropy energy (EEX) between NiO and NiFe layers, which results in little contribution of interfacial unidirectional pinning anisotropy to the interface of NiO/NiFe bilayer.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.116-116
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.37-37
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• 2006