• Title/Summary/Keyword: bilayer

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Repeated impact response of bio-inspired sandwich beam with arched and honeycomb bilayer core

  • Ahmad B.H. Kueh;Juin-Hwee Tan;Shukur Abu Hassan;Mat Uzir Wahit
    • Structural Engineering and Mechanics
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    • v.85 no.6
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    • pp.755-764
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    • 2023
  • The article examines the impact response of the sandwich beam furnished by a novel bilayer core as inspired by the woodpecker's head architecture under different repeatedly exerted low-velocity impact loadings by employing the finite element package, ABAQUS. The sandwich beam forms four essential parts comprising bottom and top carbon fiber reinforced polymer laminates encasing bilayer core made of laterally arched solid hot melt adhesive material and aluminum honeycomb. Impact loadings are implemented repeatedly with a steel hemisphere impactor for various impact energies, 7.28 J, 9.74 J, and 12.63 J. Essentially, the commonly concentrated stresses at the impact region are regulated away by the arched core in all considered cases thus reducing the threat of failure. The sandwich beam can resist up to 5 continual impacts at 7.28 J and 9.74 J but only up to 3 times repeated loads at 12.63 J before visible failure is noticed. In the examination of several key impact performance indicators under numerous loading cases, the proposed beam demonstrates favorably up to 1.3-11.2 higher impact resistance efficacies compared to existing designs, therefore displaying an improvement in repeated impact resistance of the new design.

Microfluidic System for the Measurement of Cupric Ion Concentration using Bilayer Lipid Membrane on Silver Surface (은 표면의 이중층 지질막에 의한 구리 이온 농도 측정용 마이크로플루이딕 시스템)

  • Jeong, Beum Seung;Kim, Do Hyun
    • Korean Chemical Engineering Research
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    • v.48 no.1
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    • pp.33-38
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    • 2010
  • A microfluidic system has been developed using biomaterial for the measurement of cupric ion concentration. The cell-membrane-mimicking bilayer lipid membrane(BLM)-coated silver electrode was used for the sensing of cupric ion concentration. The silver-supported BLM could increase its stability. A silver-supported bilayer lipid membrane(s-BLM) was easily obtained using its self-assembling characteristics by immersing silver wire into lipid(phosphatidylcholine; PC) solution and then dipping into aqueous KCl solution. These s-BLMs were used to determine the relationship between $Cu^{2+}$ concentration and current crossing s-BLM. Their relationship showed high linearity and reproducibility. The calibration curve was constructed to express the relationship between $Cu^{2+}$ concentration and current in the $Cu^{2+}$ concentration range of 10 and $130{\mu}M$. This calibration curve was used to measure $Cu^{2+}$ concentration in an unknown sample. Microfluidic system with s-BLM was made of PDMS(polydimethyl siloxane) using typical soft photolithography and molding technique. This integrated system has various functions such as activation of the silver surface without cutting silver wire, coating of BLM on silver surface, injection of KCl buffer solution, injection of $Cu^{2+}$ sample and measurement of $Cu^{2+}$ concentration in the sample.

Study on Effect of Various Underlayer on Bilayer Agglomerlation (다양한 하지층이 이중층의 응집현상에 미치는 영향에 관한 연구)

  • Ha, J.H.;Ryu, D.H.;Im, H.W.;Jung, J.M.;Choi, H.J.;Hong, I.G.;Koh, J.H.;Koo, S.M.;Kamiko, M.;Ha, J.G.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.233-241
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    • 2012
  • We have deposited the bilayer consisted of the underlayer and the overlayer by using DC magnetron sputter on Single crystal MgO (001) substrate. This bilayer was fabricated at fixed annealing temperature and time. We have controlled agglomeration effect by changing of the bilayer thickness. Finally, we have made the self-organization and nano-structured film. In this processing, we have made nano-dot which consists of the underlayer and the overlayer, unlike the existing method called the agglomeration effect in the single layer. The underlayer has deposited using Ti, Cr and Co. And the overlayer has deposited with Ag. Through the analysis of Atomic force microscopy (AFM), the microstructure of underlayer is observed by AFM to confirm the formation of nano-dot. As the nano-dot through above processing, we have found that the nano-dot has the different shape. As a result, when we manufactured nano-dot through the agglomeration effect of bi-layer, the best matching material is Ti for underlayer. And also, we have found that MgO/Ti/Ag samples have been grown expitaxially toward the direction of MgO (001) by X-ray Diffraction analysis.

Histological healing after grafting of bilayer artificial dermis in the oral environment (치은부에 이식한 이중인공진피의 조직학적 치유)

  • Kim, Min-Jeong;Chung, Hyun-Ju;Kim, Ok-Su;Kim, Young-Joon
    • Journal of Periodontal and Implant Science
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    • v.33 no.2
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    • pp.289-299
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    • 2003
  • The autogenous free gingival graft is the most predictable procedure currently used to increase the width of the attached gingiva in periodontics. But the major disadvantage of the procedure is to create the multiple surgical wounds at both a donor site and a recipient site. The other problem is the limited amount of available graft material in oral cavity. Therefore, recent researches have been focused to develop the biomaterial to substitute the autogenous gingival tissue. The purpose of this study was to evaluate the histologic healing after grafting of bilayer artificial dermis, compared to the free gingival graft. Four non-smoking subjects (mean age, 32.5 years) in systemically healthy state and good oral hygiene were selected according to their particular needs for correction of mucogingival problems as suggested by Nabers(1966). The recipient sites were prepared through the procedure for the free gingival graft and were grouped according to the graft materials: Experimental group(n=5) - bilayer artifcia1 dermis ($Terudermis^{(R)}$; Terumo Co. Japan) and Control group(n=6) - free gingival graft with autogenous palatal mucosa. Biopsies were harvested at 1,2,3 and 6 weeks postsurgery to evaluate histologically. At the third week in the experimental group and at the second week of in the control group, the grafts has been clinically stabilized on the recipient bed and the graft border has been blended into the surrounding tissue. In the experimental group after 1 week of grafting, the epithelial migration from the adjacent tissue to graft material was seen and after 3 weeks of grafting, the : nflmmation decreased, collagen layer of the artificial dermis was lost and the basement membrane of epithelium was formed. After 6 weeks of grafting, both groups demonstrated orthokeratinized epithelium and increased thickness of epithelial tissue and the rete peg formation, similar to the adjacent tissue, Histologic evaluation revealed a biologic acceptance and incorporation of the collagen layers of the graft tissue to the host tissue, without foreign body reaction. In conclusion, a bilayer artificial dermis is essentially similar to autogeneous free gingival graft in the correction of mucogingival problems, and has the advantages of decreased patient morbidity (no donor site) and availability of abundant amounts of graft material when needed.

Ferroelectric, Leakage Current Properties of BiFeO3/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films Prepared by Chemical Solution Deposition (Chemical Solution Deposition 방법을 이용한 BiFeO3/Pb(Zr0.52Ti0.48)O3 다층박막의 전기적 특성에 대한 연구)

  • Cha, J.O.;Ahn, J.S.;Lee, K.B.
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.52-57
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    • 2010
  • $BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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