• 한국표면공학회지
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• 제52권6호
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• 한국방재학회 논문집
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• 제11권3호
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• pp.17-28
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• 2011

본 연구에서는 초단기 예측강우의 편의(bias) 보정을 목적으로 G/R 비의 실시간 예측에 칼만 필터를 적용하였다. 초단기 예측강우로는 MAPLE 예측강우를 사용하였고, 강우의 임계치와 누적시간에 따른 G/R 비의 특성변화를 검토하여 G/R 비 산정방법도 개선하였다. 이러한 분석을 내륙, 산악, 해안 지역에 각기 적용하여 지역적 차이가 비교될 수 있도록 하였다. 결과적으로 강우의 임계치와 누적시간의 고려를 통해 안정화된 G/R 비의 산정이 가능하였으며, 이를 이용함으로서 예측 G/R 비의 정확성이 보다 향상되었다. 예측 G/R 비로 보정된 초단기 예측강우의 정도는 지역별로 내륙지역이 가장 우수한 것으로 나타난 반면에 해안지역에서 제일 열악한 것으로 나타났다.

• Communications for Statistical Applications and Methods
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• 제18권1호
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• pp.111-118
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• 2011

This paper suggests a ratio-cum product estimator of a finite population mean using information on the coefficient of variation and the fcoefficient of kurtosis of auxiliary variate in stratified random sampling. Bias and MSE expressions of the suggested estimator are derived up to the first degree of approximation. The suggested estimator has been compared with the combined ratio estimator and several other estimators considered by Kadilar and Cingi (2003). In addition, an empirical study is also provided in support of theoretical findings.

• ETRI Journal
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• 제19권2호
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• 한국표면공학회지
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• 제33권2호
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• pp.115-125
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• 2000

TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.141-144
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• 1998

The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

• 제어로봇시스템학회논문지
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• 제4권1호
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• pp.56-61
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• 1998

The velocity measurement error in the velocity-aided SDINS on the maneuvering vehicle is unavoidable and degrades the performance of the SDINS. The characteristics of the velocity measurement error can be modeled as a random bias. This paper proposes a new method for estimating the velocity measurement error in the SDINS. The generalized likelihood ratio test is used for detecting the error and a modified separate-bias Kalman filter in the feedback configuration is suggested for estimating the magnitude of the velocity measurement error.

• Journal of Preventive Medicine and Public Health
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• 제55권5호
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• pp.424-427
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• 2022

A retrospective record-linkage study (RLS) based on medical records containing drug prescription histories involves immortal time bias (ITB). Thus, it is necessary to control for this bias in the research planning and analysis stages. Furthermore, a summary of a meta-analysis including RLSs that did not control for ITB showed that specific drugs had a preventive effect on the occurrence of the disease. Previous meta-analytic results of three systematic reviews evaluating the association between statin intake and gastric cancer risk showed that the summary hazard ratio (sHR) of the RLSs was lower than 1 and was statistically significant. We should consider the possibility of ITB in the sHR of RLSs and interpret the results carefully.