• Title/Summary/Keyword: bias effect

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A Methodology of Radiation Measurement of MOSFET Dosimeter (MOSFET 검출기의 방사선 측정 기법)

  • Lho, Young-Hwan;Lee, Sang-Yong;Kang, Phil-Hyun
    • Proceedings of the IEEK Conference
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    • 2009.05a
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    • pp.159-162
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    • 2009
  • The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

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Joule Heating of Metallic Nanowire Random Network for Transparent Heater Applications

  • Pichitpajongkit, Aekachan;Eom, Hyeonjin;Park, Inkyu
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.227-231
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    • 2020
  • Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

Computer Simulation on Operating Characteristics of Nonvolatile SNOSFET Memory Devices (비휘발성 SNOSFET 기억소자의 동작특성에 관한 전산모사)

  • Kim, Joo-Yeon;Lee, Sang-Bae;Lee, Young-Hie;Seo, Kwang-Yell
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.14-17
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    • 1992
  • To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

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Heat Treatment of Stator Core for Reduction of DC-Bias of Cogging Torque (코깅토크 DC성분 저감을 위한 모터 철심 열처리)

  • Ha, Kyung-Ho;Kim, Ji-Hyun;Kwon, Oh-Yeoul;Kim, Jae-Kwan;Lim, Yang-Su
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.695-696
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    • 2008
  • This paper deals with the reduction of DC component of cogging toruqe by using the heat treatment of the stator core. The stator core is made of electrical steel sheared by the punching die. From the punching process, large mechanical stress at the edge of stator tooth induces significant plastic and elastic deformation and influences magnetic properties. Then, these phenomenon in the sheared region has influence on the magnetic unbalance in the air-gap of motor. This paper investigated the effect of the punching process on the magnetization process and the mechanical deformation and proposed the stress relief annealing method for the reduction of friction torque among one of motor characteristics.

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Effects of Home-Based Intervention Program to Prevent Child Abuse for Parents: A Meta Analysis (부모를 위한 아동학대 예방 가정방문 프로그램 효과 메타분석)

  • Park, Hyun-Jung;Kim, Hyun Kyoung
    • Child Health Nursing Research
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    • v.23 no.4
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    • pp.479-493
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    • 2017
  • Purpose: This study was done to conduct a meta-analysis of articles describing randomized controlled trials which showed substantiated effects for home-based child abuse prevention programs for all parents. Methods: The articles regarding child abuse prevention programs for parents were investigated using the systematic review method. A literature search was conducted in PubMed, CINAHL, PsycINFO, Cochrane central library, Eric, and RISS on material published. Article searches and quality appraisal through RoB (Risk of Bias) yielded 14 records. Results: The total random effect size was 0.344 (Parents outcome, 0.333; Child outcome, 0.310; Environment, 0.275). The home based intervention for parents was effective for prevention of potential child abuse. Conclusion: This study supports the effectiveness of health care professional directing child abuse prevention programs for all parents whose children are in the early years of life including during the period of pregnancy.

Comparison on Micro-Tec and TCAD simulators for device simulation (소자 시뮬레이션을 위한 Micro-Tec과 TCAD의 비교 분석)

  • 심성택;장광균;정정수;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.05a
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    • pp.321-324
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    • 2001
  • The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased packing density. This paper has compared Micro-Tec with ISE-TCAD. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths 180nm. We have presented MOSF ET's characteristics such as I-V characteristic, electric field. and compared with Micro-Tec and ISE-TCAD.

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Impedance spectroscopy for lifetime analysis of OLED

  • Yoon, Chul-Oh;Kim, Hyun-Chul;Yi, Seok-Kyung;Kong, Ung-Gul;Lee, Nam-Heon;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.137-140
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    • 2002
  • The frequency response analysis of complex impedance spectra using small perturbation ac impedance spectroscopy is an informative method of OLED performance characterization and lifetime analysis. Using simple RC equivalent circuit mode,l macroscopic nonliniear transport properties of semiconductive emission/transport layers can be analyzed and parameterized. We present the bias voltage dependence and aging effect in impedance spectra measured from an ITO/CuPC/TPD/$Alq_3$/LiF/Al OLED device, and discuss possible failure mechanism based on impedance model parameters.

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Systematic Review of Acupuncture Treatment for Tic Disorder (틱장애 침치료에 대한 체계적 문헌고찰)

  • Lee, Kyungjin;Jeong, Minjeong
    • The Journal of Pediatrics of Korean Medicine
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    • v.31 no.2
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    • pp.14-24
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    • 2017
  • Objectives The study was conducted to evaluate the recent treatment and study trends of tic disorder by reviewing domestic and international randomized controlled studies. Methods The acupuncture treatment on tic disorder randomized control study articles (published by June 10th, 2016) were selected from seven academic literature archives; NDSL, OASIS, KTKP, Pubmed, J-STAGE, CNKI, and CINAHL. Results Ten articles were identified after searching. These studies were analyzed by year, diagnostic criteria, intervention, evaluation criteria, treatment points, treatment effect, treatment duration, and 'Risk of Bias' assessment. Conclusions According to the articles, acupuncture was effective in treating tic disorder. However, additional well-designed randomized controlled studies will be required to justify the effectiveness of acupuncture treatment on tic disorder.

Cavitation Compliance in 1D Part-load Vortex Models

  • Dorfler, Peter K
    • International Journal of Fluid Machinery and Systems
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    • v.10 no.3
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    • pp.197-208
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    • 2017
  • When Francis turbines operate at partial load, residual swirl in the draft tube causes low-frequency pulsation of pressure and power output. Scale effects and system response may bias the prediction of prototype behavior based on laboratory tests, but could be overcome by means of a 1D analytical model. This paper deals with the two most important features of such a model, the compliance and the source of excitation. In a distributed-parameter version, compliance should be represented as an exponential function of local pressure. Lack of similarity due to different Froude number can thus be compensated. The normally unknown gas content in the vortex cavity has significant influence on the pulsation, and should therefore be measured and considered as a test parameter.

Study on Two-Failure GPS RAIM Problem (GPS RAIM에서의 2개 파라미터 고장진단에 대한 연구)

  • 유창선;이상정
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.194-194
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    • 2000
  • In aviation navigation by GPS, requirements on availability and integrity must be absolutely satisfied for safety. Current study on accomplishing this integrity includes RAM(Receiver Autonomous Integrity Monitoring), checking integrity internally in GPS receiver itself. However RAIM techniques have be investigated and presented under assumption that there is included only one fault in measurements from GPS, In case of multiple fault, an interaction among bias errors sometimes results in decreasing the effect of multiple fault. This may make an exact fault detection and identification difficult, and study on mutiple fault RAIM focused on. This paper explains the reasons that techniques applied on single fault are not adequate to extend directly to two faults case and shows that RAIM solution on two fault may be given in revised parity space.

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