• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.687-690
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• 2003

Experimental results are presented for gate oxide degradation and its effect on device parameters under negative and positive bias stress conditions using NMOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both hole- and electron-trapping are found to dominate the reliability of gate oxide. However, with changing gate voltage polarity, the degradation becomes dominated by electron trapping. Statistical parameter variations as well as the "OFF" leakage current depend on those charge trapping. Our results therefore show that Si or O bond breakage by electron can be another origin of the investigated gate oxide degradation.gradation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.689-691
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• 2002

Well-aligned multi-wall carbon nanotubes (MWCNTs) have been grown on both Coming glass and silicon substrates at about 400 $^{\circ}C$ by a modified plasma - enhanced chemical vapor deposition system. We have investigated laser irradiation effect on carbon nanotube surface by using an ultra - violet laser. The laser operated to modify structural defect of was carbon nanotube and to ablate possible contamination of carbon nanotube surface. The morphology and surface transformation of MWCNTs as analyzed by a SEM. In addition, the field emission measurement was also carried out in a vacuum chamber with a $10^{-7}$ Torr base pressure by applying bias voltages up to 1000V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• 전기의세계
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• v.30 no.10
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• pp.645-654
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• 1981

A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.403-405
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• 2000

This paper describes a single transistor type ferroelectric field effect transistor (1Tr FeFET) memory cell scheme, which select one unit memory cell and program/read it. The well voltage can be controlled by isolating the common row well lines. Through applying bias voltage to Gate and Well, respectively, we implement If FeFET memory cell scheme in which interference problem is not generated and the selection of each memory cell is possible. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1727-1729
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• 2000

We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.23-26
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• 2017

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.160-161
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• 2002

One problem in giant magnetoresistance(GMR) spin valves and magnetic tunneling junctions(MTJ) exchange biased by Mn-based antiferromagnets is the Mn diffusion into the ferromagnetic layer and other layers upon annealing.$^{1-3}$ It seems that Mn diffusion that may occur during annealing has a key role in the exchange biasing. We have fabricated multilayers inserting the nanolayer(NL) between antiferromagnet and ferromagent using ion-beam deposition system to study the diffusion effect for the exchange bias. (omitted)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.265-272
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• 2014

The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEDs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted to investigate pulsing effect on IEDs at multiple rf driven electrodes. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEDs using the developed rf sheath model and observed that numerically solved IEDs are in a good agreement with the experimental results.