• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of the Korean earth science society
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• v.41 no.4
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• pp.356-366
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• 2020

The accuracy of satellite-observed sea surface salinity (SSS) was evaluated in comparison with in-situ salinity measurements from ARGO floats and buoys in the seas around the Korean Peninsula, the northwest Pacific, and the global ocean. Differences in satellite SSS and in-situ measurements (SSS errors) indicated characteristic dependences on geolocation, sea surface temperature (SST), and other oceanic and atmospheric conditions. Overall, the root-mean-square (rms) errors of non-averaged SMOS SSSs ranged from approximately 0.8-1.08 psu for each in-situ salinity dataset consisting of ARGO measurements and non-ARGO data from CTD and buoy measurements in both local seas and the ocean. All SMOS SSSs exhibited characteristic negative bias errors at a range of -0.50- -0.10 psu in the global ocean and the northwest Pacific, respectively. Both rms and bias errors increased to 1.07 psu and -0.17 psu, respectively, in the East Sea. An analysis of the SSS errors indicated dependence on the latitude, SST, and wind speed. The differences of SMOS-derived SSSs from in-situ salinity data tended to be amplified at high latitudes (40-60°N) and high sea water salinity. Wind speeds contributed to the underestimation of SMOS salinity with negative bias compared with in-situ salinity measurements. Continuous and extensive validation of satellite-observed salinity in the local seas around Korea should be further investigated for proper use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.912-916
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• 2001

Fluxmeter is a measuring instrument the magnetic flux intensity by means of an integration of the voltage induced to a search coil to unit time. It also is required to a precise integrator since the voltage induced to a search coil has a differential value of the flux ${\Phi}$ to unit time. In this study, a bias current which is a main problem of the integrator in a drift troublesome depending on the temperature of a FET is investigated. We have confirmed that the temperature dependence of both the bias current of a integrator using the FET and the reversal saturated current of the minor carrier in a P-N junction of a semiconductor were the same. The property of a commercial integrator goes rapidly down with increasing temperature. The bias current of a FET is increased twice as much with 10$^{\circ}C$ increment. As a result, the low drift integrator could be developed by setting the lower temperature up with a pottier device.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.265-269
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• 2005

Exchange bias effect of a various layered thin films were studied by FMR measurment. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. Exchange biased NiFe/IrMn, IrMn/NiFe/IrMn, and NiFe/IrMn/CoFe thin films showed larger unidirectional anisotropy field and uniaxial anisotropy field with compared to that of an unbiased NiFe single thin film. In case of NiFe/Cu/IrMn, the film with thick Cu layer exhibited a similar trend to the unbiased NiFe thin film. NiFe/IrMn/CoFe thin film showed two resonance field distribution due to different ferromagnetic layers. In additon to the resonance field, the line width was also analysed with related to exchange bias effect.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.62-62
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.30-32
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.182-183
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• 2001

가입자 지역의 데이터 통신 용량의 증가로 기존 국간에서 병목현상을 피하기 위해 도입된 파장분할다중화(WDM) 기술이 도심(Metro) 지역에도 적용되고 있다. 100km 미만의 단거리 지역은 경제성을 고려할 때 장거리 전송에 사용되는 외부변조 방식보다는 저가로 구현이 가능한 직접변조 방식의 송신기가 주로 사용되고 있다. 반도체 레이저를 이용한 직접변조 방식을 채택한 시스템에 있어 소광비와 처핑은 시스템의 전송성능을 결정하는 중요한 요소이다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.132-135
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• 2000

This paper present the results of measured Thermally Stimulated Current of EPR(Ethylene Propylene Rubber) sheet material with variation of bias temperature range of -35~80[$^{\circ}C$], the quality of the material of electrode, condition. The origins of these peaks are that, low temperature peak seems to result from dipole, and high temperature peak from the orientation electronic trap.

• Journal of the Optical Society of Korea
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• v.9 no.4
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• pp.131-134
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• 2005

We have proposed a method to calculate the absorption coefficients for the bound-to-continuum transitions in a strong biased quantum-well infrared photodetector. We have applied this method to a manufactured sample of typical device parameters, and obtained good agreements with experiments. The absorption coefficients evaluated are up to 5,700/cm at some particular operating conditions. We have also been able to make a qualitative explanation for the bias dependence of response.