• Journal of Magnetics
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• 제15권4호
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• pp.194-198
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• 2010

In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.17-24
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• 2004

Density-gradient 방법을 이용하여 게이트의 양자효과가 double-gate MOSFET의 단채널 효과에 미치는 영향을 2차원으로 분석하였다. 게이트와 sidewall 산화막 경계면에서 발생하는 2차원 양자공핍 현상에 의하여 게이트 코너에 큰 전하 다이폴이 형성되며 subthreshold 영역에서 다이폴의 크기가 증가하고 classical 결과에 비하여 전자 농도와 전압 분포가 매우 다름을 알 수 있었다. Evanescent-nude분석을 통하여 게이트의 양자효과가 소자의 단채널 효과를 증가시키며 이는 기판에서의 양자효과에 의한 영향보다 크다는 것을 확인하였다. 양자효과에 의하여 게이트 코너에 형성되는 전하 다이폴이 단채널 효과를 증가시키는 원인임을 밝혔다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.12-12
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• 2010

By using scanning tunneling microscopy/spectroscopy (STM/S), we can make images of various physical properties in nanometer-scale spatial resolutions. Here, I demonstrate imaging of two electron-correlated subjects; screening and superconductivity by STM/S. The electrostatic potential around a charge is described with the Coulomb potential. When the charge is located in a metal, the potential is modified because of the free electrons in the host. The potential modification, called screening, is one of the fundamental phenomena in the condensed matter physics. Using low-temperature STM we have developed a method to measure electrostatic potential in high spatial and energy resolutions, and observed the potential around external charges screened by two-dimensional surface electronic states. Characteristic potential decay and the Friedel oscillation were clearly observed around the charges [1]. Superconductivity of nano-size materials, whose dimensions are comparable with the coherence length, is quite different from their bulk. We investigated superconductivity of ultra-thin Pb islands by directly measuring the superconducting gaps using STM. The obtained tunneling spectra exhibit a variation of zero bias conductance (ZBC) with a magnetic field, and spatial mappings of ZBC revealed the vortex formation [2]. Size dependence of the vortex formation will be discussed at the presentation.

• 한국자기학회지
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• 제12권6호
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• pp.218-223
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• 2002

가슨 분무법으로 제조한 High-Flux형 $Ni_{x}Fe_{100-x}$(x=40~50, wt.%) 퍼멀로이 분말 및 압분 코아의 자기적 특성을 조사하였다. 포화자화는 45%Ni조성에서 최대 값을 보이며 이보다 보 함량이 낮아지면 인바 효과의 작용에 의해 급격하게 감소하였다. 압분 코아의 투자율은 Ni 농도가 낮아지면 현저히 증가하는 바 이는 자기변형의 감소에 기인하는 것으로 사료되었으며, 자심손실은 Ni=45%에서 가장 낮은 값을 나타내었다. Ni농도가 50%에서 45%로 낮아짐에 따라 자심손실이 감소하는 주원인은 전기 비저항의 증대에 따른 와전류 손실의 감소에 있는 것으로 생각되었다. Ni=45% 분말 합금으로 만든 압분 코아는 Ni=50%의 경우보다 더 우수한 투자율의 주파수 의존성, 큰 Q 값, 그리고 더 나은 직류 바이어스 특성을 나타내어 상용 High-Flux 코아(50%Ni-50%Fe)에 비해 더 좋은 압분 자심 재료가 될 수 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국자기학회지
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• 제14권1호
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• pp.7-12
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• 2004

F $e_{73.5}$C $u_1$N $b_3$S $i_{15.5}$ $B_{7}$ 비정질 리본 합금을 490∼61$0^{\circ}C$의 온도 범위에서 열처리하고 이를 볼 밀링 하여 얻은 250∼850$\mu\textrm{m}$크기의 자성분말과 5wt%의 세라믹 절연체로 구성된 분말 코아의 자기적 특성에 열처리 온도가 미치는 영향을 조사하였다. 5$50^{\circ}C$에서 1 h동안 열처리하여 직경 11 nm의 $\alpha$-Fe상 나노 결정립 구조로 되었을 때(전기비저항은 110$\mu$Ω$.$cm)가장 높은 실효투자율 및 품질계수를 나타내었으며 그 값은 각각 125와 53이었고, 실효투자율의 경우 약 500 KHz에 이르기까지 일정한 크기를 유지하였다. 그리고 이 열처리 조건에서 230 mW/㎤(f=50 KHz, $B_{m}$ =0.1 T)의 대단히 낮은 자심손실을 나타내었다. 그러나 이 합금의 분말 코아는 종래의 분말 코아 재료(MPP,센더스트 등)에 비해 그리 우수하지 못한 직류 바이어스 특성 특히 저 자장 하에서의 낮은 퍼센트 투자율을 나타내었는데, 이는 종래의 소재와 유사한 투자율을 얻는데 너무 큰 입도의 분말이 필요한 것에 그 원인이 있는 것으로 이해되었다.

• 대기
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• 제26권2호
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• pp.347-356
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• 2016

Radiosonde is an observation equipment that measures pressure (geopotential height), temperature, relative humidity and wind by being launched up from the ground. Radiosonde data which serves as an important element of weather forecast and research often causes a bias in a model output due to accuracy and sensitivity between the different manufacturers. Although Korean Meteorological Administration (KMA) and several institutes have conducted routine and intensive radiosonde observations, very few studies have been done before on the characteristics of radiosonde performance. Analyzing radiosonde observation data without proper understanding of the unique nature of those sensors may lead to a significant bias in the analysis of results. To evaluate performance and reliability of radiosonde, we analyzed the differences between two sensors made by the different manufacturers, which have been used in the campaign of Experiment on Snow Storm At Yeongdong (ESSAY). We improved a couple of methods to launch the balloon being attached with the sensors. Further we examined cloud-layer impacts on temperature and humidity differences for the analysis of both sensors' performance among various weather conditions, and also compared daytime and nighttime profiles to understand temporal dependence of meteorological sensors. The overall results showed that there are small but consistent biases in both temperature and humidity between different manufactured sensors, which could eventually secure reliable precisions of both sensors, irrespective of accuracy. This study would contribute to an improved sounding of atmospheric vertical states through development and improvement of the meteorological sensors.

• 대한원격탐사학회지
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• 제34권1호
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• pp.1-15
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• 2018

Passive microwave sea surface temperatures (SST) were validated in the Northwest Pacific using a total of 102,294 collocated matchup data between Global Precipitation Measurement (GPM) / GPM Microwave Sensor(GMI) data and oceanic in-situ temperature measurements from March 2014 to December 2016. A root-mean-square (RMS) error and a bias error of the GMI SST measurements were evaluated to $0.93^{\circ}C$ and $0.05^{\circ}C$, respectively. The SST differences between GMI and in-situ measurements were caused by various factors such as wind speed, columnar atmospheric water vapor, land contamination near coastline or islands. The GMI SSTs were found to be higher than the in-situ temperature measurements at low wind speed (<6 m/s) during the daytime. As the wind speed increased at night, SST errors showed positive bias. In addition, other factors, coming from atmospheric water vapor, sensitivity degradation at a low temperature range, and land contamination, also contributed to the errors. One of remarkable characteristics of the errors was their latitudinal dependence with large errors at high latitudes above $30^{\circ}N$. Seasonal characteristics revealed that the errors were most frequently observed in winter with a significant positive deviation. This implies that SST errors tend to be large under conditions of high wind speeds and low SSTs. Understanding of microwave SST errors in this study is anticipated to compensate less temporal capability of Infrared SSTs and to contribute to increase a satellite observation rate with time, especially in SST composite process.

• 한국자기학회지
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• 제24권5호
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• pp.140-145
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• 2014

본 연구에서는 교환 결합 특성을 갖는 CoFe/MnIr 박막 재료에서 MnIr의 두께에 따라 측정한 토오크 신호를 Stoner-Wohlfarth 모델로 계산한 결과와 비교 분석하였다. 모델 계산을 위하여 일축 이방성 상수 $K_F$와 $K_{AF}$를 각각 갖는 강자성(F)층과 반강자성 (AF)층 계면에 작용하는 교환 결합 상수 $J_c$를 고려하였다. 고정되지 않는 AF층에 의한 회전 손실은 $0.5t_c$ < $t_{AF}$ < $t_c$ ($=J_c/K_{AF}$)의 범위에서 나타나며, 고정된 AF층에 의한 일방 이방성 상수 $J_k$는 $t_{AF}$ > $t_c$에서 나타났다. CoFe/MnIr 재료에서 임계두께는 $t_c$ = 3.4 nm였으며, $t_{AF}$ = 3 nm의 시편에서 측정한 토오크 신호에서 보인 회전 손실은 AF 결정립의 용이축이 모든 방향으로 고르게 분포한 특성으로 설명되었다. $t_{AF}$ = 10 nm의 시편에서 측정된 토오크 신호에서 추출한 일방 이방성 상수는 $J_k=0.63J_c$의 관계를 보였다. 따라서, 일방 이방성 상수는 AF 결정립의 용이축을 한쪽 방향으로 정렬할 경우 $J_k=J_c$가 되어 약 37 %의 특성 향상을 기대할 수 있다.

• 한국자기학회지
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• 제12권6호
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• pp.201-205
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• 2002

경사형 모서리접합을 이용한 터널링 자기저항(tunneling magnetoresistance; TMR) 특성을 연구하였다. 박막 증착과 식각은 스퍼터링과 사이크로트론 전자공명 (electron cyclotron resonance; ECR) 장치를 각각 사용하였다. Si$_3$N$_4$ 장벽층을 이용한 접합의 다층구조는 NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm)이었다. 상하부 반강자성체 NiO에 삽입된 wedged 형태의 고정층 Co와 장벽층 Si$_3$N$_4$위에 경사진 비대칭 구조에서 자유층 NiFe간의 접합에서 일어나는 특이한 스핀의존 터널링 현상이 관찰되었다. 외부자장이 0Oe일 때와 접합경계선에 수직방향으로 90Oe일 때 측정한 접합소자의 전류전압특성 곡선이 현저하게 구별되어 나타났다. TMR의 인가 전압의존성은 $\pm$10 V일 때도 약 -10%을 유지하는 매우 안정된 자기저항 특성을 보여주었다.