• Journal of Nutrition and Health
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• v.54 no.5
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• pp.459-473
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• 2021

Purpose: Although numerous systematic reviews or meta-analysis have reported the hypotensive effects of garlic, the application of these results in the area of functional food is limited. This is because the trials used various garlic preparations and patients with differing hypertensive intensities. To validate the use of garlic powder as a blood pressure lowering functional food, we performed the current meta-analysis, focusing on the study of prehypertensive subjects. Methods: Literature search was carried out using various database up to July 2020, including PubMed, Cochrane, ScienceDirect and Korean studies Information Service System, and each study was screened by pre-stated inclusion/exclusion criteria. We identified nine trials that met the eligibility, of which two studies with moderate or high risk of bias were excluded. Results: Meta-analysis of the seven studies revealed that an intake of garlic powder significantly lowered the systolic blood pressure (SBP) and diastolic blood pressure (DBP) by -6.0 mmHg (95% confidence interval [CI], -11.2, -0.8; p = 0.025) and -2.7 mmHg (95% CI, -5.3, -0.1; p = 0.046), respectively. Shapes of the funnel plot for both SBP and DBP seemed symmetrical, and the Egger's regression revealed no publication bias. Moreover, duration of the intervention period was inversely associated with the pooled effects of garlic powder on SBP (p = 0.019) and DBP (p = 0.019), and this result was supported by the subgroup-analysis. The daily dose of garlic powder, baseline value of each biomarker, and subject number, did not moderate the effects on SBP and DBP. Conclusion: Results of the present meta-analysis indicate that garlic powder supplements are superior to placebo for improving the BP in prehypertensive individuals.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.26 no.1
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• pp.49-61
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• 2021

The repeated shipboard measurements that have been conducted by the National Institute of Fisheries Science (NIFS) for more than a half century, provide the valuable long-term hydrographic data with high spatial-temporal resolution. However, this unprecedent dataset has been rarely used for oceanic climate sciences because of its reliability issue. In this study, temporal variability of salinity error in the NIFS data was quantified by means of extremely small variability of salinity in the deep layer of the south-western East Sea, in order to contribute to studies on long-term variability of the East Sea. The NIFS salinity errors estimated on the isothermal surfaces of 1℃ have a remarkable temporal variation, such as ~0.160 g/kg in the year of 1961~1980, ~0.060 g/kg in 1981~1994,~0.020 g/kg in 1995~2002, and ~0.010 g/kg in 2003~2014 on average, which basically represent bias error. In the recent years, even though the quality of salinity has been improved, there still remain relatively large bias errors in salinity data presumably due to failure of salinity sensor managements, especially in 2011, 2013, and 2014. On the contrary, the salinity in the year of 2012 was very accurate and stable, whose error was estimated as about 0.001 g/kg comparable to the salinity sensor accuracy. Thus, as long as developing proper data quality control procedures and sensor management systems, I expect that the NIFS shipboard hydrographic data could have good enough quality to support various studies on ocean response to climate variabilities. Additionally, a few points to improve the current NIFS shipboard measurements were suggested in the discussion section.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.6C
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• pp.367-377
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• 2008

As part of study to develop LRFD (Load and Resistance Factor Design) codes for foundation structures in Korea, resistance factors for static bearing capacity of driven steel pipe piles were calibrated in the framework of reliability theory. The 57 data sets of static load tests and soil property tests conducted in the whole domestic area were collected and these load test piles were sorted into two cases: SPT N at pile tip less than 50, SPT N at pile tip equal to or more than 50. The static bearing capacity formula and the Meyerhof method using N values were applied to calculate the expected design bearing capacities of the piles. The resistance bias factors were evaluated for the two static design methods by comparing the representative measured bearing capacities with the expected design values. Reliability analysis was performed by two types of advanced methods: the First Order Reliability Method (FORM), and the Monte Carlo Simulation (MCS) method using resistance bias factor statistics. The target reliability indices are selected as 2.0 and 2.33 for group pile case and 2.5 for single pile case, in consideration of the reliability level of the current design practice, redundancy of pile group, acceptable risk level, construction quality control, and significance of individual structure. Resistance factors of driven steel pipe piles were recommended based on the results derived from the First Order Reliability Method and the Monte Carlo Simulation method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.14-22
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• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.619-628
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• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• The Journal of the Korea Contents Association
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• v.19 no.11
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• pp.314-324
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• 2019

This study inspected 203 employees with disabilities who are working in social enterprises based in Seoul and Gyeonggi-do from March to June 2019 in order to find out the factors of self-efficacy, social support, wages and welfare, relationship with upper management and co-worker relationships which influence job Performance and job satisfaction of disabled workers. The implications of this research are as follows. First, the factors that positively affect work performance are self-efficacy and co-worker relationships. It was shown that trust and respect that disabled workers working in domestic social corporations perceive while diligently performing the work without any bias and getting from coworkers led to good work performance. Second, when the current wage was determined by the employee's perceived ability, skill and current workloads that fit to their ability, the workers expressed job satisfaction. Moreover, job satisfaction by the employees was followed by the perception of the possibility of living a more stable life with the current monthly income. Third, upper managements' care on personal issues, acknowledgment of autonomy and support through communication have led to job satisfaction among the employees. Lastly, considering the research result in which the social support that the disabled workers perceive does not show any positive effect on work performance or work satisfaction, it can be concluded that there is a need for a change in the social perception of disabled workers.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.