• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.7
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• pp.278-284
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• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• Journal of Surface Science and Engineering
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• v.31 no.6
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• pp.317-324
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• 1998

TiN and TiCN films were deposited on the high speed steel by Cathode Arc Ion Plating(CAIP) Process to investigate the tool life extension effect. The experiment variables were bias voltage and deposit time for the TiN coating and reactive gas flow rate ($CH_4:N_2$) under fixing deposit pressure, are current, bias voltage for the TiCN coating respectively. The micro structure and mechanical properties were investigated and compared for among the coating conditions using various methods and machining practice.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1931-1933
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• 1999

In this paper, the current and voltage properties on the gate oxide film due to the variation of thickness are studied. The specimen is used for n-ch power MOSFET. It is shows the leakage current and current density characteristics due to the applied electric field when the oxide thickness is each $600[\AA],\;800[\AA]$ and $1000[\AA]$, respectively. We known that the leakage current is a little higher when the voltage as reverse bias contrast with forward bias in poly gate is applied. In order to experiment for AC properties is measured for capacitance characteristics. It is confirmed that the value of input capacitance have been a lot of influenced on $SiO_2$ thickness contrast with the value of output capacitance.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1078-1080
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• 1995

The pulsed electro-acoustic method was used as a nondestructive measurement technique of spare charge distribution in dielectric materials. In our work presented here, we measured simultaneously the space charge distribution and conduction current in the low-density polyethylene samples with elevated temperatures up to $80^{\circ}C$ and electric field up to 20kV/mm. In the temperature less than $50^{\circ}C$, homocharges are mainly accumulated close to the electrodes under DC bias and after grounding. At the temperature exeeds $50^{\circ}C$, heterocharges are accumulated near the opposite electrode under DC bias. However after grounding the upper electrode, this charges immediately disappeared. The conduction current in LDPE at $20^{\circ}C$ and $30^{\circ}C$ was reduced slowly with increasing interval of applied voltage. But as temperature increased, the conduction current tended to increase slowly with the time and the degree of increase is enlarged.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.4
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• pp.35-40
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• 1975

The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.789-795
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• 2011

It is necessary to accurately predict converter losses for optimized design of a high-power DC-DC converter. The losses of switching devices and inductor among the elements of the converter take significantly greater proportion. The current ripple will be determined by the size of the inductance and this inductance value varies depending on the DC amount of inductor current. As the inductance changes according to load current, the change influences not only the inductor loss itself but also the total converter loss. In this paper, for more accurate design of a bi-directional DC-DC converter for 30kW-class energy storage system, more accurate computational model is proposed considering inductance variation according to the load current change. The inductance changes using variable magnetic cores are verified and converter efficiency is tested through simulations and experiments.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.