• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.501-503
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• 2008

This paper presents the design of a 2.4 GHz low phase noise fully integrated LC Voltage-Controlled-Oscillator (VCO) in $0.18{\mu}m$ CMOS technology. The VCO is without any tail bias current sources for a low phase noise and, in which differential varactors are adopted for the symmetry of the circuit. At the same time, the use of differential varactors pairs reduces the tuning range, i.e., the frequency range versus VTUNE, so that the phase noise becomes lower. The simulation results show the achieved phase noise of -138.5 dBc/Hz at 3 MHz offset, while the VCO core draws 3.9mA of current from a 1.8V supply. The tuning range is from 2.28GHz to 2.55 GHz.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.12-13
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• 2006

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. The current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.141-144
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• 1998

The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

• 제어로봇시스템학회:학술대회논문집
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• 1992.10a
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• pp.401-406
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• 1992

When a velocity-aided strapdown inertial navigation system is loaded into a torpedo subjected to an extraneous force by the current, odometer measurement errors occur seriously. In order to compensate for navigation errors induced by large odometer biases, the Kalman Filter with separate bias estimator is applied, which separately estimates an unknown bias, and corrects the state estimate produced by the bias-free Kalman Filter to reflect the effect of the bias estimate.

• The Journal of Information Systems
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• v.23 no.3
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• pp.143-164
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• 2014

This study draws on status quo bias theoretic perspective as a meta-theoretic lens to explain why individuals have resists to adopt smart devices for their tasks. More specifically, we attempted to examine the relationships among user's resist, perceived usefulness and individual productivity in the smart work context. By employing the status quo bias theoretic perspective, we develop and test our research model by using a survey data from 235 individual users. We demonstrate that satisfaction on the current state influence users' resist, and also the users' resist is mediated by perceived usefulness on individual productivity. From the status quo bias view, this study presents an alternative meta-theoretical lens in order to understand individuals' resist in the smartwork context.

• Current Optics and Photonics
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• v.8 no.5
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• pp.456-462
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• 2024

We propose a novel fade-free optical fiber interferometric vibration sensor using a simple setup with a 90° optical hybrid. The interferometer consists of all-optical components without the phase modulators and complex demodulation processes that were previously used to compensate for signal fading induced by phase bias change. Fade-free output was successfully obtained by in-phase and quadrature detection with a π/2 phase shifting scheme. Theoretical analysis and measurement results showed that the proposed interferometric vibration sensor operates independently of the phase bias state of interfering waves.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.2
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• pp.79-85
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• 2008

It is important to consider the life of battery and low power operation for various wireless communications. Thus, Analog current-mode signal processing with SI circuit has been taken notice of in designing the LSI for wireless communications. However, in current mode signal processsing, current memory circuit has a problem called clock-feedthrough. In this paper, we examine the connection of CMOS switch that is the common solution of clock-feedthrough and calculate the relation of width between CMOS switch for design methodology for improvement of current memory. As a result of simulation, when the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the width relation in CMOS switch is obtained with $W_{Mp}=5.62W_{Mn}+1.6$, for the nMOS width of 2~6um in CMOS switch. And from the same simulation condition, it is obtained with $W_{Mp}=2.05W_{Mn}+23$ for the nMOS width of 6~10um in CMOS switch. Then the defined width relation of MOS transistor will be useful guidance in design for improvement of current memory.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.10
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• pp.831-835
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• 2014

The relative concentration of surface and interfacial defects in hydrothermally grown ZnO nanostructures was investigated by a comparison of two samples having different growth temperatures via bias voltage sweep rate under laser illumination of 405 and 355 nm. The current of small ZnO nanostructures (growth temperature of $75^{\circ}C$) decreased when induced more slowly bias voltage sweep rate under the laser illumination. In contrast, the current of large ZnO nanostructures (growth temperature of $90^{\circ}C$) increased. This difference in currents indicates the relation of relative defects concentration between surface and interfacial defects of ZnO nanostructure. Our experimental approach has potential applicability in the analysis of influence on defects in ZnO devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.836-845
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• 2001

A Novel fully-differential bipolar current subtracter(FCS) and its application to current controlled current amplifier(CCCA) for high-accuracy current-mode signal processing were designed. To obtain full-differential current output, the FCS was symmetrically composed of two current follower with low current-input impedance. The CCCA to control output current by the bias current was consisted of the subtracter and a current gain amplifier(CGA) with single-ended current output.. The simulation result shows that the FCS has current-input impedance of 5 Ω and a good linearity. The CCCA has 3-dB cutoff frequency of 20 MHz for the range over bias current 100 $\mu$A to 20 mA. The power dissipation of the FCS and CCCA are 1.8 mW and 3 mW, respectively.